 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. KTK5133S N CHANNEL MOS FIELD EFFECT TRANSISTOR L E B L DIM A MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1.5V. 2 3 D B C D E G H J K A G H 1 P P L M N P C N CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VGSS ID PD Tch Tstg RATING 30 20 150 200 150 -55 150 UNIT V V mA mW 1. SOURCE 2. GATE 3. DRAIN K MAXIMUM RATING (Ta=25 ) M SOT-23 EQUIVALENT CIRCUIT D Marking Lot No. G Type Name KC S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time ) TEST CONDITION VGS= 16V, VDS=0V MIN. 30 0.5 100 TYP. 3.7 7.0 2.3 5.9 84 275 MAX. 1 1 1.5 5.2 pF pF pF nS nS UNIT A V A V mS SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=10V, ID=80mA ID=40mA, VGS=2.5V VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDD=15V, ID=80mA, VGS=0 4V 2001. 10. 29 Revision No : 0 J 1/3 KTK5133S I D - V DS 0.16 DRAIN CURRENT I D (A) 3.0 I F - V SD 0.3 FORWARD CURRENT I F (A) VGS =0 3.5V 0.12 5 2. V V V 2.0 4.0V V 0.1 0.05 0.03 Ta= -25 C Ta= 75 C Ta= 25 C 6.0 0.08 VGS =1.5V 0.04 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE V DS (V) 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 DIODE FORWARD VOLTAGE VSD (V) I D - VGS 0.30 VDS =10V Y fs FORWARD TRANSFER ADMITTANCE Yfs (S) 1 0.5 0.3 Ta=-25 C Ta=25 C VDS =10V - ID DRAIN CURRENT ID (A) 0.25 0.20 C C Ta=75 Ta= -2 Ta= 5 C 25 C Ta =7 5 0.15 0.10 0.05 0 0 0.5 1.0 0.1 0.05 0.03 0.01 0.01 0.03 0.05 0.1 0.3 0.5 1.5 2.0 2.5 3.0 GATE-SOURCE VOTAGE VGS (V) DRAIN CURRENT I D (A) C - V DS f=1MHz R DS (on) - I D STATIC DRAIN-SOURCE ON-STATE RESISTANCE R DS (on) () 10 500 300 CAPACITANCE C (pF) 5 3 Ta=75 C Ta=25 C Ta=-25 C 100 50 30 C rss C iss C oss VDS =2.5V 10 0 2 4 6 8 10 12 14 16 18 20 DRAIN-SOURCE VOLTAGE VDS (V) 1 0.01 0.03 0.05 0.1 0.3 0.5 DRAIN CURRENT ID (A) 2001. 10. 29 Revision No : 0 2/3 KTK5133S t - ID 1K SWITCHING TIME t (ns) 500 300 t d(off) tf tr VDS =15V VGS =4V P DRAIN POWER DISSIPATION PD (W) 0.30 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 D - Ta 100 50 30 t d(on) 10 0.01 0.03 0.05 0.1 0.2 80 100 120 140 160 DRAIN CURRENT I D (A) AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT VDD=15V I D=80mA R L=187.5 D PW=10s D.U. < 1% = 4V 0V VIN P.G 50 S KTK5133S VOUT VIN G 2001. 10. 29 Revision No : 0 3/3 |
Price & Availability of KTK5133S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |