 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Including two(TR, Diode) devices in TSV. (Thin Super Mini type with 5 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process. A F G 1 KTX411T EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE E B 5 DIM MILLIMETERS _ A 2.9 + 0.2 B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 2 3 4 G EQUIVALENT CIRCUIT (TOP VIEW) C J I 5 4 Marking h FE Rank 5 4 L J H Lot No. 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 ANODE EMITTER BASE COLLECTOR CATHODE D1 Q1 Type Name C 1 2 3 1 2 3 TSV MARK SPEC KTX411T Type Q1 hFE Rank : Y Mark CE Q1 hFE Rank : GR CF KTX411T MAXIMUM RATINGS (Ta=25 TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg 0.8 ) RATING 30 20 5 1 -1 0.9 150 -55~150 UNIT V V V A A * Package mounted on a ceramic board (600 DIODE D1 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-Repetitive Peak Surge current Junction Temperature Storage Temperature SYMBOL VRRM VR IO IFSM Tj Tstg RATING 25 20 1.0 3 125 -55~125 D UNIT V V A 2002. 8. 13 Revision No : 2 1/4 KTX411T ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note) hFE Classification Y:120~240, SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) VCE(SAT) VBE(SAT) fT Cob GR:200~400. TEST CONDITION VCB=20V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50 VCE=2V, IC=1A (Pulse) IC=500 , IB=50 IC=500 , IB=50 VCE=10V, IC=50 VCB=10V, IE=0, f=1 MIN. 120 30 TYP. 0.1 0.85 180 15 MAX. 0.1 0.1 400 0.3 1.2 V V UNIT. DIODE D1 CHARACTERISTIC Forward Voltage Reverse Current SYMBOL VF IR IF=1.0A VR=20V TEST CONDITION MIN. TYP. 0.4 MAX. 0.45 200 UNIT. V 2002. 8. 13 Revision No : 2 2/4 KTX411T D 1 (DIODE) 1 FORWARD CURRENT I F (A) REVERSE CURRENT I R (mA) IF - V F 10 10 1 100 10 1 0.1 2 I R - VR Ta=125 Ta=75 C 100m T 1 a= 25 C C =7 5 C 10m Ta =25 Ta =2 5 Ta C C C Ta=25 C Ta=-25 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE V R (V) Q 1 (NPN TRANSISTOR) 800 COLLECTOR CURRENT I C (mA) I B =10mA I B =8mA I B =6mA I C - VCE 1000 COLLECTOR CURRENT I C (mA) 50m A I C - VCE IB =30mA IB =20mA IB =15mA IB =10mA IB =8mA IB =5mA IB =3mA 600 I B =4mA 600 400 200 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 400 I B =2mA 200 I B =1mA I B =0mA IB = 800 I B =1mA I B =0mA 0 0 1 2 3 4 5 6 7 8 0.8 0.9 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VBE COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 1.4 COLLECTOR CURRENT I C (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE-EMITTER VOLTAGE VBE (V) VCE =2V VCE(sat) - I C 2.0 1.0 0.5 0.3 0.1 0.05 0.03 0.01 10 I C /I B=10 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) 2002. 8. 13 Revision No : 2 3/4 KTX411T fT - IC TRANSITION FREQUENCY f T (MHz) 2K 1K 500 300 100 50 30 10 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) VCE =10V hFE - I C 500 300 DC CURRENT GAIN h FE 100 50 30 10 5 3 1 1 3 10 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) VCE =2V 2002. 8. 13 Revision No : 2 4/4 |
Price & Availability of KTX411TY
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |