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| LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837DW1T1 Features 1.High transition frequency.(fT=1.5GHz) 2.Low output capacitance.(Cob=0.95pF) 1 2 3 6 5 4 SC-88/SOT-363 (3) (2) (1) Q1 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation Junction temperature Storage temperature * 120mW per element must not be exceeded. Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 30 18 3 50 150(TOTAL) 150 -55~+150 Unit V V V mA mW* C C Q2 (4) (5) (6) DEVICE MARKING L2SC3837DW1T1=8P ELECTRICAL CHARACTERISTICS(TA = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage hFE pairing Transition frequency Output capacitance *Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) hFE1/hFE2 fT Cob Min. 30 18 3 27 0.5 600 - Typ 1 1500 0.95 Max. 0.5 0.5 270 0.5 2 1.6 Unit V V V A A V MHz pF Conditions IC=10A IC=1mA IE=10A VCB=10V VEB= 2 V VCE/IC=10V/10mA IC/IB=20mA/4mA VCE/IC=10V/10mA VCE/IC=10V/10mA,f=200MHz* VCB/f=10V1MHz,IE=0A L2SC3837DW1T1 -1/2 LESHAN RADIO COMPANY, LTD. L2SC3837DW1T1 SC-88/SOT-363 NOTES: A G 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 S 1 5 4 - B- 2 3 D6PL 0.2 (0.008) M B M N J A B C D G H J K N S C H K PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 0.5 mm (min) 0.4 mm (min) 1.9 mm 0.65 mm 0.65 mm L2SC3837DW1T1 -2/2 |
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