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 LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Pb-Free Package is available
1 2 3
LMUN5311DW1T1 Series
6 5 4
SOT-363/SC-88
MAXIMUM RATINGS
(T A = 25C unless otherwise noted, common for Q 1
6
5
4
and Q 2 , - minus sign for Q 1 (PNP) omitted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation T A = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature 1. FR-4 @ Minimum Pad
Symbol Value 50 V CBO 50 V CEO 100 IC
Unit Vdc Vdc mAdc
Q2
R2 R1
1 2
R1
R2
Q1
3
Symbol PD
Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.)
Unit mW mW/C C/W
MARKING DIAGRAM
6 5 4
XX
1 2 3
R JA
670 (Note 1.) 490 (Note 2.)
xx = Device Marking = (See Page 2)
Symbol PD
Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.)
Unit mW mW/C C/W C/W C
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
R JA R JL T J , T stg
493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) -55 to +150
2. FR-4 @ 1.0 x 1.0 inch Pad
LMUN5311DW-1/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device LMUN5311DW1T1 LMUN5311DW1T1G LMUN5312DW1T1 LMUN5312DW1T1G LMUN5313DW1T1 LMUN5313DW1T1G LMUN5314DW1T1 LMUN5314DW1T1G LMUN5315DW1T1 LMUN5315DW1T1G LMUN5316DW1T1 LMUN5316DW1T1G LMUN5330DW1T1 LMUN5330DW1T1G LMUN5331DW1T1 LMUN5331DW1T1G LMUN5332DW1T1 LMUN5332DW1T1G LMUN5333DW1T1 LMUN5333DW1T1G LMUN5334DW1T1 LMUN5334DW1T1G LMUN5335DW1T1 LMUN5335DW1T1G Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Marking 11 11(Pb-Free) 12 12(Pb-Free) 13 13(Pb-Free) 14 14(Pb-Free) 15 15(Pb-Free) 16 16(Pb-Free) 30 30(Pb-Free) 31 31(Pb-Free) 32 32(Pb-Free) 33 33(Pb-Free) 34 34(Pb-Free) 35 35(Pb-Free) R1(K) 10 10 22 22 47 47 10 10 10 10 4.7 4.7 1 1 2.2 2.2 4.7 4.7 4.7 4.7 22 22 2.2 2.2 1 1 2.2 2.2 4.7 4.7 47 47 47 47 47 47 R2(K) 10 10 22 22 47 47 47 47 Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
LMUN5311DW-2/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LMUN5311DW1T1 LMUN5312DW1T1 LMUN5313DW1T1 LMUN5314DW1T1 LMUN5315DW1T1 LMUN5316DW1T1 LMUN5330DW1T1 LMUN5331DW1T1 LMUN5332DW1T1 LMUN5333DW1T1 LMUN5334DW1T1 LMUN5335DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 140 - - - - - - - - - - - - - 0.25 Vdc Symbol Min Typ Max Unit
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LMUN5330DW1T1/LMUN5331DW1T1 (IC = 10 mA, IB = 1 mA) LMUN5315DW1T1/LMUN5316DW1T1 LMUN5332DW1T1/LMUN5333DW1T1/LMUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) LMUN5311DW1T1 LMUN5312DW1T1 LMUN5314DW1T1 LMUN5315DW1T1 LMUN5316DW1T1 LMUN5330DW1T1 LMUN5331DW1T1 LMUN5332DW1T1 LMUN5333DW1T1 LMUN5334DW1T1 LMUN5335DW1T1 LMUN5313DW1T1
VCE(sat)
VOL - - - - - - - - - - - - VOH LMUN5330DW1T1 LMUN5315DW1T1 LMUN5316DW1T1 LMUN5333DW1T1 LMUN5311DW1T1 LMUN5312DW1T1 LMUN5313DW1T1 LMUN5314DW1T1 LMUN5315DW1T1 LMUN5316DW1T1 LMUN5330DW1T1 LMUN5331DW1T1 LMUN5332DW1T1 LMUN5333DW1T1 LMUN5334DW1T1 LMUN5335DW1T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 - 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 - 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 - 1.2 0.185 0.56 0.056 4.9 - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 -
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Vdc
Input Resistor
kW
Resistor Ratio LMUN5311DW1T1/LMUN5312DW1T1/LMUN5313DW1T1 LMUN5314DW1T1 LMUN5315DW1T1/LMUN5316DW1T1 LMUN5330DW1T1/LMUN5331DW1T1/LMUN5332DW1T1 LMUN5333DW1T1 LMUN5334DW1T1 LMUN5335DW1T1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R2
LMUN5311DW-3/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) LMUN5311DW1T1 LMUN5312DW1T1 LMUN5313DW1T1 LMUN5314DW1T1 LMUN5315DW1T1 LMUN5316DW1T1 LMUN5330DW1T1 LMUN5331DW1T1 LMUN5332DW1T1 LMUN5333DW1T1 LMUN5334DW1T1 LMUN5335DW1T1 ICBO ICEO IEBO - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 - - nAdc nAdc mAdc Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO V(BR)CEO
Vdc Vdc
ALL LMUN5311DW1T1 SERIES DEVICES
300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RqJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150
Figure 1. Derating Curve
LMUN5311DW-4/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5311DW1T1 NPN TRANSISTOR
1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 100
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
0.01
0.001
0
20 40 IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25C
100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01
25C TA = -25C
Cob , CAPACITANCE (pF)
3
2
1
VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
LMUN5311DW-5/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5311DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V
TA = -25C 0.1 75C 25C
TA = 75C 100 25C -25C
0.01
0
20 IC, COLLECTOR CURRENT (mA)
40
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25C
100
75C
25C TA = -25C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10 1
2
0.1
1
0.01 0 1 2
VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
TA = -25C 25C 75C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
LMUN5311DW-6/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5312DW1T1 NPN TRANSISTOR
1 IC/IB = 10 TA = -25C 25C 75C 1000 hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
VCE = 10 V TA = 75C 25C -25C
0.1
100
0.01
0.001
0
20 IC, COLLECTOR CURRENT (mA)
40
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25C
100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01
75C
25C TA = -25C
Cob , CAPACITANCE (pF)
3
2
1
VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
LMUN5311DW-7/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5312DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
1 TA = -25C
25C
TA = 75C 100
25C
-25C
75C 0.1
0.01
0
20 IC, COLLECTOR CURRENT (mA)
40
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100 75C 10
25C TA = -25C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8
VO = 5 V 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100 V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V TA = -25C
10 75C
25C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
LMUN5311DW-8/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5313DW1T1 NPN TRANSISTOR
10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
VCE = 10 V TA = 75C 25C -25C
1 TA = -25C 0.1 25C 75C
100
0.01
0
20 40 IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz IE = 0 V TA = 25C
100 75C 10 1 0.1 0.01
25C TA = -25C
VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
LMUN5311DW-9/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5313DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C
TA = -25C 0.1 75C
25C
0.01
0
10 20 30 IC, COLLECTOR CURRENT (mA)
40
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C
100 10 1 0.1 0.01 VO = 5 V 0 1 2
TA = 75C
25C -25C
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
IC, COLLECTOR CURRENT (mA)
0.001
3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
LMUN5311DW-10/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5314DW1T1 NPN TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C
-25C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 36. Input Voltage versus Output Current
LMUN5311DW-11/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - LMUN5314DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C
TA = 75C
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C
-25C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C
75C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
LMUN5311DW-12/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5315DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 0.1 -25C 25C TA = -25C 100 25C 1000 75C VCE = 10 V
0.01
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C 1 TA = -25C
Cob, CAPACITANCE (pF)
0.1
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 25C 75C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 46. Input Voltage versus Output Current
LMUN5311DW-13/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5315DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 75C 75C TA = -25C 25C VCE = 10 V
0.1 -25C 0.01
100
25C
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
4.5 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C
100 75C 10 25C
1 TA = -25C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 25C 75C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 51. Input Voltage versus Output Current
LMUN5311DW-14/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5316DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 0.1 -25C 25C TA = -25C 25C 1000 75C VCE = 10 V
100
0.01
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C 1 TA = -25C
Cob, CAPACITANCE (pF)
0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 25C 75C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 56. Input Voltage versus Output Current
LMUN5311DW-15/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5316DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25C 100 25C 1000 75C
VCE = 10 V
0.1 -25C 0.01
75C
25C
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100
75C 25C TA = -25C
10
1
0.1
0.01
VO = 5 V
0.001 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 25C 75C
VO = 0.2 V 0.1
0
10 20 30 40 IC, COLLECTOR CURRENT (mA)
50
Figure 61. Input Voltage versus Output Current
LMUN5311DW-16/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5330DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V
100 75C 10 25C TA = -25C
0.001
0
5
10 15 20 25 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
100 IC, COLLECTOR CURRENT (mA) Vin, INPUT VOLTAGE (VOLTS) 75C 10 25C
10
1 TA = -25C 0.1
TA = -25C 1 75C 25C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
0.001
Figure 64. Output Current versus Input Voltage
Figure 65. Input Voltage versus Output Current
LMUN5311DW-17/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5330DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 100
75C 10 25C TA = -25C VCE = 10 V
0.01
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C
1 TA = -25C 0.1
0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 68. Output Capacitance
Figure 69. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 75C 25C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 70. Input Voltage versus Output Current
LMUN5311DW-18/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5331DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C hFE, DC CURRENT GAIN 1000 VCE = 10 V
0.1 -25C 0.01 25C
100 75C 10 TA = -25C 25C
0.001
0
5
10 15 20 25 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 71. VCE(sat) versus IC
Figure 72. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100
Cob, CAPACITANCE (pF)
10 75C 25C 1 TA = -25C
0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 73. Output Capacitance
Figure 74. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 75C
25C
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 75. Input Voltage versus Output Current
LMUN5311DW-19/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5331DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C hFE, DC CURRENT GAIN 100
0.1 -25C 0.01 25C
75C 10
25C
TA = -25C VCE = 10 V
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 76. VCE(sat) versus IC
Figure 77. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C
100 75C 10 25C
1 TA = -25C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 78. Output Capacitance
Figure 79. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 75C
25C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 80. Input Voltage versus Output Current
LMUN5311DW-20/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5332DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 75C 100 25C 10 TA = -25C 1000 VCE = 10 V
0.01
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C 1 TA = -25C 0.1
Cob, CAPACITANCE (pF)
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 83. Output Capacitance
Figure 84. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 25C 75C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 85. Input Voltage versus Output Current
LMUN5311DW-21/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5332DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V
0.1 -25C 0.01
75C
100
75C
25C
10
TA = -25C
25C
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 86. VCE(sat) versus IC
Figure 87. DC Current Gain
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C
Cob, CAPACITANCE (pF)
1 TA = -25C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 88. Output Capacitance
Figure 89. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C
1
75C
25C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 90. Input Voltage versus Output Current
LMUN5311DW-22/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5333DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 75C 100 1000 VCE = 10 V
TA = -25C
25C
0.01
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 91. VCE(sat) versus IC
Figure 92. DC Current Gain
8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C 1
0.1 TA = -25C 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 93. Output Capacitance
Figure 94. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 75C 25C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 95. Input Voltage versus Output Current
LMUN5311DW-23/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5333DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 100 TA = -25C 25C 1000 VCE = 10 V
0.1
75C -25C
25C
0.01
10
0.001
0
5
10 15 25 20 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 96. VCE(sat) versus IC
Figure 97. DC Current Gain
4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C
1 TA = -25C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 98. Output Capacitance
Figure 99. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 75C 25C
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 100. Input Voltage versus Output Current
LMUN5311DW-24/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5334DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 100 1000 VCE = 10 V
TA = -25C
25C
0.01
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 101. VCE(sat) versus IC
Figure 102. DC Current Gain
3.5 3 Cob, CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 75C 10 25C 1
0.1 TA = -25C 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 103. Output Capacitance
Figure 104. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS)
10 TA = -25C
1 75C
25C VO = 0.2 V
0.1
0
40 10 20 30 IC, COLLECTOR CURRENT (mA)
50
Figure 105. Input Voltage versus Output Current
LMUN5311DW-25/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5334DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 100 TA = -25C 25C 1000 VCE = 10 V
0.1
75C
-25C 0.01
25C
10
0.001
0
5
10 15 25 20 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 106. VCE(sat) versus IC
Figure 107. DC Current Gain
LMUN5311DW-26/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5335DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 75C 100 1000 VCE = 10 V
TA = -25C
25C
0.01
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 108. VCE(sat) versus IC
Figure 109. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100
75C
Cob, CAPACITANCE (pF)
10
25C
1 TA = -25C 0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 110. Output Capacitance
Figure 111. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = -25C 1 75C 25C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 112. Input Voltage versus Output Current
LMUN5311DW-27/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS -- LMUN5335DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 75C 0.1 -25C 0.01 25C hFE, DC CURRENT GAIN 100 1000 VCE = 10 V
TA = -25C
25C
10
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 113. VCE(sat) versus IC
Figure 114. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA)
100 25C 10 75C 1 TA = -25C
0.1
0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 115. Output Capacitance
Figure 116. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS) 75C
1
25C
TA = -25C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 117. Input Voltage versus Output Current
LMUN5311DW-28/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 SERIES
SC-88/SOT-363
NOTES:
A G
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN INCHES MAX 0.087 0.053 0.043 MILLIMETERS MIN MAX 1.80 1.15 0.80 0.10 2.20 1.35 1.10
6 S 1
5
4 - B-
2
3
A B C D G H J K N S
0.071 0.045 0.031
D6PL
0.2 (0.008) M B M N J
0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087
0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20
C
H
K
PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2
0.5 mm (min)
0.4 mm (min)
1.9 mm
0.65 mm 0.65 mm
LMUN5311DW-29/29


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