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| Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : = 100 deg. Infrared light emission close to monochromatic light : P = 950 nm (typ.) Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05 2-o0.450.05 0 1. 5 .1 +0 0.1 - 1. 0 0 .1 45 3 High-speed modulation 2 1 Absolute Maximum Ratings (Ta = 25C) 2.540.2 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.5 3 -25 to +85 -30 to +100 Unit mW mA A V C C 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO P VF IR Ct tr tf Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 5 typ 10 950 50 1.3 60 1 1 100 max Unit mW nm nm 1.6 10 V A pF s s deg. 1 Infrared Light Emitting Diodes LN152 IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 3 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) 10 IFP (mA) Pulse forward current 10 -1 1 10 10 2 IFP (A) 100 10 2 Allowable forward current 80 Pulse forward current 1 10 60 10 -1 1 40 20 10 -2 10 -1 0 - 25 0 20 40 60 80 100 10 -3 10 -2 10 -2 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 IF = 100mA PO -- Ta IF = 50mA PO VF (V) 10 2 1.2 50mA 10mA 0.8 Relative radiant power Forward voltage 10 (1) Relative radiant power 120 PO 1 10 -1 - 40 1 (2) 0.4 10 -1 10 -2 1 10 10 2 10 3 10 4 0 - 40 0 40 80 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 100mA 100 Spectral characteristics IF = 100mA Ta = 25C Directivity characteristics 0 100 80 60 40 10 20 30 40 Relative radiant intensity(%) P (nm) Relative radiant intensity (%) 980 80 50 60 70 80 90 Peak emission wavelength 960 60 20 940 40 920 20 900 - 40 0 40 80 120 0 800 850 900 950 1000 1050 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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