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| Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.50.1 2 (1.5) 1 2.54 1.6 For optical control systems 5.50.2 1.0 15.51.0 1.0 4.50.3 o3.60.2 o3.00.2 Features High-power output, high-efficiency : Ie = 3.5 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors : P = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability o3 plastic package 0.50.1 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg ratings 75 50 1 3 -25 to +85 - 40 to +100 Unit mW mA A V C C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Cente radiant Intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol Ie P VF IR Ct Conditions IF = 20mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 3.5 typ 940 50 1.3 35 15 max Unit mW/sr nm nm 1.5 10 V A pF deg. 1 LN69 Infrared Light Emitting Diodes IF -- Ta 60 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 80 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 -1 10 0 - 25 0 20 40 60 80 100 10 -2 10 -1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) Ie -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 3 Ie -- Ta IF = 50mA Relative radiant intensity Ie VF (V) 10 (1) 1.2 10mA 1mA 1 (2) 0.8 Relative radiant intensity Ie 120 IF = 50mA Forward voltage 10 2 10 -1 0.4 10 -2 10 -3 10 -2 10 -1 1 0 - 40 0 40 80 10 - 20 0 20 40 60 80 Pulse forward current IFP (A) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 90 30 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 920 20 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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