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| LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET DESCRIPTION KEY FEATURES 0.5m InGaAs E-mode pHEMT 2.4 - 2.5GHz Operation Single 3.3V Supply Gain ~ 13.0dB Noise Figure ~ 1.5dB Input IP3 ~ +6.5dBm Input P1dB ~ +2.5dBm On-Chip Bias Circuit On-Chip Input/Output Match 2mm x 2mm MLPQ-12L Low Profile 0.5mm WWW .Microsemi .C OM The LX5561 is a low noise amplifier (LNA) for WLAN applications in the 2.4-2.5 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process. It operates with a single positive voltage supply of 3.3V, with noise figure of 1.5dB while maintaining input third order intercept point(IIP3) of up to +6.5dBm. The LNA is implemented with bias circuit and input/output matching circuit on chip, resulting in simple external circuit on board. In addition, the onchip bias circuit provides stable performance of gain, NF and current for voltage variation compared to a general resistor-network bias circuit. The LX5561 is available in a 12-pin 2mm x 2mm micro-lead package (MLPQ-12L). BLOCK DIAGRAM APPLICATIONS Vdd Wireless LAN 802.11b/g WiMax Bias Circuit RF Input RF Output Input Match Output Match IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com PRODUCT HIGHLIGHT LX5561 LX5561 PACKAGE ORDER INFO LL Plastic MLPQ 12 pin RoHS Compliant / Pb-free LX5561LL Note: Available in Tape & Reel. Append the letters "TR" to the part number. (i.e. LX5561LL-TR) Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF Off........................................................................................... 4 V Drain Current ............................................................................................................ 40 mA Total Power Dissipation............................................................................................0.15 W RF Input Power ..................................................................................................... +10 dBm Operation Ambient Temperature................................................................. -40C to +85C Storage Temperature Range ........................................................................ -65C to 150C Package Peak Temp. for Solder Reflow (40 seconds maximum exposure).... 260C (+0 -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. PACKAGE PIN OUT VDD N/C N/C WWW .Microsemi .C OM 10 11 12 1 2 3 N/C RF OUT N/C 9 8 7 6 5 4 N/C RF IN N/C LL PACKAGE (Bottom View) RoHS / Pb-free NiPdAu Finish N/C GND N/C FUNCTIONAL PIN DESCRIPTION Name RF IN RF OUT VDD GND Pin # 2 8 12 5 1,3,4,6,7,9, 10,11, Center Metal Description RF input for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. RF output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Supply voltage. Ground. N/C Not Connected. They can be treated either as open pins or connected to ground. PACKAGE DATA PACKAGE DATA Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET ELECTRICAL CHARACTERISTICS Test conditions: VDD = 3.3V, IDD = 10.5mA, TA = +25C (Room Temperature) Parameter Application Frequency Range Small-Signal Gain Noise Figure Input 3rd Order Intercept Point Input P1dB Input Return Loss Output Return Loss Supply Voltage Supply Current Symbol f S21 NF IIP3 IP1dB S11 S22 VDD IDD Test Conditions LX5561 Typ 13.0 1.5 6.5 2.5 12 12 3.3 10.5 Units GHz dB dB dBm dBm dB dB V mA WWW .Microsemi .C OM Min 2.4 Max 2.5 1.8 Freq. 1 = 2.412GHz, Freq. 2 = 2.432GHz Freq. = 2.45GHz ELECTRICALS ELECTRICALS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET S-PARAMETER S11 20 10 0 -10 -20 -30 -40 0 1 2 3 4 5 6 7 Frequency (GHz) S12 S21 S22 GAIN OVER TEMP 3.0V 15 14 S21 (dB) 13 +25C 12 11 10 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency (GHz) +85C 3.3V 3.6V WWW .Microsemi .C OM S11, S12, S21, S22 (dB) -40C Typical S-Parameter Data at Room Temperature (Vdd = 3.3V, Idd = 10.5mA at Room Temperature) NOISE FIGURE OVER TEMP 3.0V 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 2.30 3.3V 3.6V 16 15 14 CURRENT OVER TEMP -40C +25C +85C +85C Idd (mA) Noise Figure (dB) 13 12 11 10 9 8 7 +25C -40C 2.40 Frequency (GHz) 2.50 2.60 6 3 3.1 3.2 3.3 Vdd (V) 3.4 3.5 3.6 INPUT P1DB (+25C) 3.0V 6 3.3V 3.6V INPUT IP3 (+25C) 3.0V 11 10 9 3.3V 3.6V 5 4 IP1dB (dBm) IIP3 (dBm) 8 7 6 5 GRAPHS GRAPHS 3 2 1 4 0 2.30 2.40 Frequency (GHz) 2.50 2.60 3 2.30 2.40 Frequency (GHz) 2.50 2.60 Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET POWER SWEEP @ 2.45GHZ Pout 20 15 Pout(dBm), Gain(dB) 10 5 0 -5 -10 -15 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Pin (dBm) Gain Idd 40 35 30 25 20 15 10 5 Idd (mA) WWW .Microsemi .C OM (Vdd=3.3V, Idq=10.5mA at Room Temperature) GRAPHS GRAPHS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET APPLICATION SCHEMATIC WWW .Microsemi .C OM BOM LIST Reference Designator C1 C2 C3 Part Description Capacitor, 1 nF Capacitor,1 F Capacitor,10 F Case 0402 0603 0805 NOTES It is recommended to place C1 at 20-50mil from MLP package outline. C2 and C3 are used for standalone evaluation board test only. They are not needed in final applications. APPLICATIONS APPLICATIONS Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET PACKAGE DIMENSIONS WWW .Microsemi .C OM LL 12-Pin MLPQ Plastic (2x2mm) D D2 E L e A A1 A3 b E2 Dim A A1 A3 b D D2 E E2 e L Note: MILLIMETERS MIN MAX 0.40 0.50 0.00 0.05 0.15 REF 0.15 0.25 2.00 BSC 0.77 1.02 2.00 BSC 0.77 1.02 0.40 BSC 0.19 0.39 INCHES MIN MAX 0.016 0.020 0.000 0.002 0.006 REF 0.006 0.010 0.079 BSC 0.030 0.040 0.079 BSC 0.030 0.040 0.016 BSC 0.007 0.015 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Recommended Land Pattern Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5561 TM (R) InGaAs - E-Mode pHEMT Low Noise Amplifier PRODUCTION DATA SHEET NOTES WWW .Microsemi .C OM NOTES NOTES PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reverses the right to change the configuration and performance of the product and to discontinue product at any time. Copyright (c) 2006 Rev. 1.0, 2006-12-20 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 |
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