 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| polyfet rf devices LX703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 100.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 220 Watts Junction to Case Thermal Resistance o 0.75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 13.0 A RF CHARACTERISTICS ( 100.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz 500 MHz VSWR Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 4.8 0.25 30.00 180.0 4.8 90.0 MIN 65 6.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.60 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.60 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LX703 POUT VS PIN GRAPH LX703 POUT VS PIN Freq=500MHz, VDS=28V, Idq=.6A 52 16.00 1000 50 15.00 CAPACITANCE VS VOLTAGE L1B 3DIE CAPACITANCE Pout 48 14.00 100 13.00 Ciss Coss Efficiency = 60% 46 1dB compresion = 100W 44 12.00 10 42 11.00 Crss 40 Gain 10.00 1 38 23 25 27 29 31 33 35 37 39 PIN IN dBm 9.00 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE L1B 3 DIE IV 30 100 ID & GM VS VGS L1B 3 DIE ID, GM vs VG ID 25 20 ID IN AMPS 10 15 10 1 GM 5 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 vg=2v Vg=4v vg=10v vg=12v 0 2 4 6 8 Vgs in Volts 10 12 14 S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
Price & Availability of LX703
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |