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MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
300.2 26.60.2 21.20.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.50.1
1 5 1 2 3 4
4 5
0.45 61 13.71 18.81 23.91 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=135-155MHz, ZG=ZL=50 f=135-155MHz, ZG=ZL=50 f=135-155MHz, ZG=ZL=50 Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W C C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C,ZG=ZL=50 unless otherwise noted)
Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 135 7 50 Max 155 Unit MHz W % dBc -
VDD=7.2V, VGG=3.5V, Pin=50mW ZG=50, VDD=4-9.2V, Load VSWR<4:1 VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1
-20 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 14 13 VDD=7.2V 12 VGG=3.5V Pin=50mW 11 10 9 8 7 6 5 4 3 2 1 0 130 140 90 PO 80 70 T 60 50 40 in 30 20 180 0.1 0.01 1 100 1 10 OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 100 VDD=7.2V VGG=3.5V f=135MHz 10 PO T 100
150
160
170
0.1
1
10
FREQUENCY f (MHz)
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 100 VDD=7.2V VGG=3.5V f=155MHz 10 PO T 1 10 100
OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE 16 14 12 10 8 6 4 2 PO T f=135MHz VGG=3.5V Pin=50mW 100 90 80 70 60 50 40 30 3 4 5 6 7 8 20 9
0.1 0.01
0.1
1
10
1 100
0 SUPPLY VOLTAGE VDD (V)
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE 16 14 12 10 8 6 4 2 0 3 4 5 6 7 8 SUPPLY VOLTAGE VDD (V) PO T f=155MHz VGG=3.5V Pin=50mW 100 90 80 70 60 50 40 30 20 9 1 10 100
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE VDD=7.2V Pin=50mW f=135MHz PO T 100
10
0.1 0.5
1
1.5
2
2.5
3
1 3.5
GATE VOLTAGE VGG (V)
Nov. 97
MITSUBISHI RF POWER MODULE
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 100 VDD=7.2V Pin=50mW f=155MHz 10 PO T 100
1
10
0.1 0.5
1
1.5
2
2.5
3
1 3.5
GATE VOLTAGE VGG (V)
Nov. 97

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