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Variable Capacitance Diodes
MA2S331
Silicon epitaxial planar type
Unit : mm
For VCO of an UHF radio I Features
* Small series resistance rD. rD = 0.18 (typ.) * Good linearity of C - V curve * SS-mini package, optimum for down-sizing of equipment
0.15 min.
0.15 min.
0.27 - 0.02
0.8 0.1
+ 0.05
1.3 0.1 1.7 0.1
I Absolute Maximum Ratings Ta = 25C
Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature VR IF Tj Tstg 12 20 150 -55 to +150 V mA C C
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
0.7 0.1
Parameter
Symbol
Rating
Unit
Marking Symbol: F
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(2V) CD(4V) CD(10V) Capacitance ratio CD(1V)/CD(4V) CD(2V)/CD(10V) Series resistance* rD CD = 9 pF, f = 470 MHz VR = 12 V VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz 17.0 14.0 10.0 5.5 1.53 2.25 6.0 1.6 2.5 0.18 15.0 Conditions Min Typ Max 10 20.0 16.0 12.4 6.5 1.83 2.75 0.22 Unit nA pF pF pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 - 0.02
+ 0.05
0.27 - 0.02
+ 0.05
1
MA2S331
CD VR
100 f = 1 MHz Ta = 25C 120 25C
Variable Capacitance Diodes
IF V F
1.04 f = 1 MHz VR = 1 V 1.03
CD Ta
50
100
Diode capacitance CD (pF)
30 20
Forward current IF (mA)
80
Ta = 60C
- 40C
CD(Ta) CD(Ta = 25C)
1.02
2V 4V
10
60
1.01
10 V
5 3 2
40
1.00
20
0.99
1
0 0 4 8 12 16 20 24 28 32 36 40
0
0.2
0.4
0.6
0.8
1.0
1.2
0.98
0
20
40
60
80
100
Reverse voltage VR (V)
Forward voltage VF (V)
Ambient temperature Ta (C)
IR Ta
1 000 VR = 10 V
Reverse current IR (nA)
100
10
1
0.1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (C)
2

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