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| Schottky Barrier Diodes (SBD) MA3J702 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 0.1 0.425 1.25 0.1 0.425 + 0.1 * S-mini type 3-pin package * Allowing to rectify under (IF(AV) = 500 mA) condition * Low IR (reverse current) type. (About 1/10 of IR of the ordinary products) 2.0 0.2 1.3 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 -55 to +125 Unit V V mA A C C 0.9 0.1 1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3-pin) Marking Symbol: M4R Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 5 V VR = 10 V IF = 10 mA IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 0.3 0.5 60 5 Conditions Min Typ Max 1 10 0.4 0.55 Unit A A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.15 - 0.05 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.3 - 0 I Features 1 MA3J702 IF V F 1 0.8 0.7 Schottky Barrier Diodes (SBD) VF Ta 104 IR VR 10-1 Ta = 125C Forward voltage VF (V) Forward current IF (A) 0.6 0.5 0.4 0.3 0.2 0.1 50 mA 5 mA 10-2 - 20C Reverse current IR (A) 75C 25C 103 Ta = 125C IF = 500 mA 102 75C 10 10-3 10-4 1 25C 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 10 000 80 70 Ct VR 1 000 Ta = 25C 300 IF(surge) tW Ta = 25C IF (surge) tW 100 30 10 3 1 0.3 0.1 0.1 Breakdown point (typ.) 1 000 Reverse current IR (A) VR = 20 V 10 V 6V 3V 60 50 40 30 20 10 100 10 1 0.1 -40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 0.3 1 3 10 30 100 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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