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| AlGaAs SPST Reflective PIN Diode Switch V 1.00 MA4AGSW1 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz Dual shunt diode configuration 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz Low Current consumption: -5 V for Low Loss State +10 mA for Isolation State n M/A-COM's unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection n n n n n MA4AGSW1 Layout Description M/A-COM's MA4AGSW1 is an Aluminum-Gallium-Arsenide anode enhanced, SPST PIN diode switch. AlGaAs anodes, which utilize M/A-COM's patent pending hetero-junction technology, produce less diode resistance than conventional GaAs processes. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. Absolute Maximum Ratings1 @ TA = +25 C (Unless otherwise specified) Parameter Operating Temperature Storage Temperature Incident C.W. RF Power Reverse Voltage Bias Current Maximum Rating -55 C to +125 C -65 C to +150 C + 30 dBm @ -5 V 25 V 30 mA per Diode Applications The low capacitance of the PIN diodes used makes it ideal for use in microwave and millimeter wave switch designs, where ultra low insertion loss is required. The very high shunt conductance of the diodes dramatically improves isolation at millimeter wave frequencies. These AlGaAs PIN switches are used in switching arrays for radar systems, high-speed ECM circuits, and millimeter wave measurement instrumentation. 1. Exceeding any of these values may result in permanent damage Nominal Chip Dimensions Chip Dimensions (m) X 780 Pad Dimensions (m) X 100 Y 650 Y 100 Chip RF J1 J2 Pad Locations (m) X Y 0 0 +530 0 Pad Locations Relative to J1 AlGaAs SP4T PIN Diode Switch Electrical Specifications @ TA = 25 C, - 5 V @ 0 mA, or +10 mA Bias Current (On-Wafer Measurements) RF Specifications Parameters Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed MA4AGSW1 V 1.00 Frequency 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 0.05 - 18 GHz 18 - 50 GHz 10 GHz Minimum 20 40 - Typical 0.2 0.3 22 46 30 16 30 16 10 Maximum 0.3 0.6 - Units dB dB dB dB ns NOTES: 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times. Typical Driver Connections Control Level (DC Current) J1 or J2 -5 V +10 mA RF Output Conditions J1-J2 Low Loss Isolation 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch Microwave and Millimeter Wave Performance MA4AGSW1 V 1.00 TYPICAL INSERTION LOSS @ -5 V 0 -0.1 IL ( dB ) -0.2 -0.3 -0.4 -0.5 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) TYPICAL ISOLATION @ +10 mA 0 -10 IRL ( dB ) -20 -30 -40 -50 -60 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) J2 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch Microwave and Millimeter Wave Performance (cont'd) MA4AGSW1 V 1.00 TYPICAL INPUT RETURN LOSS @ -5 V 0 -10 IRL ( dB ) -20 -30 -40 -50 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) TYPICAL OUTPUT RETURN LOSS @ -5 V 0 -10 IRL ( dB ) -20 -30 -40 -50 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch Assembly Considerations The following precautions should be observed to avoid damaging these chips. MA4AGSW1 V 1.00 Solder Die Attachment All die attach and bonding methods should be compatible with gold metal. Solder which does not scavange gold, such as 80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not expose die to a temperature greater than 300 C for more than 10 seconds. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. Electrically Conductive Epoxy Die Attachment Assembly can be preheated to approximately 125 C. Use a controlled thickness of approximately 2 mils for best electrical and thermal conductivity. Cure epoxy as per manufacturer's schedule. For extended cure times, temperatures should be kept below 150 C. Electro-Static Sensitivity These Devices are considered ESD Class1. Proper ESD techniques should be used when handling these devices. General Handling The protective polymer coating on the active areas of these die provides scratch and impact protection, particularly for the metal airbridge which contacts the diode's anode. Die should primarily be handled with vacuum pickups, or alternatively with plastic tweezers. Ribbon/Wire Bonding Wedge thermocompression bonding or ball bonding may be used to attach ribbons or wires to the RF bonding pads. Gold ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest inductance and best microwave performance. Mounting Techniques These AlGaAs devices are designed to be mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which is not rich in Sn content. Operation of the MA4AGSW1 The Application of 0 V or a Negative DC Voltage to either J1 or J2 provides Insertion Loss for the MA4AGSW1 SPST Reflective Switch. Isolation is achieved with +10 mA total D.C. current. Constant Current Sources should supply the DC Control Current. The Forward Bias Diode Voltages at the Bias Node will not exceed | 1.6 volts |, ( | 1.4 | volts typical for Supply Currents up to + 30 mA). The Backside Area of the Die is the RF and DC Return Ground Plane. The Bias Network Design should yield > 30 dB RF to DC Isolation. Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by applying a Minimum Value of | -2 V | at the D.C. Bias Node, which is achievable with a Standard, +/- 5 V TTL Controlled PIN Diode Driver. Typical PIN Diode Driver Open Circuit Output Voltages are within | 1V | of the Power Supply Voltages. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 AlGaAs SP4T PIN Diode Switch MA4AGSW1 Schematic with 2-18 GHz Bias Network DC Bias MA4AGSW1 V 1.00 39 pF 22 nH J1 22 pF 22 pF J2 AlGaAs Switch Die 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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