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Monolithic HMIC Integrated Bias Network 18 - 40 GHz
V 1.00
MA4BN1840-1
Features
n n n n n
MA4BN1840-1 Chip Layout
Broad Bandwidth Specified from 18 to 40 GHz Useable from 10 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated Construction
Description
The MA4BN1840-1 device is a fully monolithic broadband bias network utilizing M/A-COM's HMIC TM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form vias by imbedding them in low loss, low dispersion glass in addition to High Q spiral Inductors and MIM capacitors. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high performance with exceptional repeatability through millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metalization allows for manual or automatic die attach via 80Au/20Sn or Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy.
Applications
The MA4BN1840-1 millimeter frequency bias network is suitable for D.C. biasing PIN Diode control circuits as a RF-DC de-coupling network and as a D.C. Return network. The device can also be used as a bi-directional re-active coupler for schottky detector circuits. D.C. currents up to 150 mA and D.C. voltages up to 50 V may be used.
Absolute Maximum Ratings1 @ TA = +25 C (Unless otherwise specified)
Parameter Operating Temperature Storage Temperature Die Attach Temperature RF C.W. Incident Power D.C. Bias Current D.C. Bias Voltage Value -65 C to +125 C -65 C to +150 C 320 C for 20 sec 10 Watts +/- 150 mA +/- 50 V
1. Exceeding any of these values may result in permanent damage
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Electrical Specifications @ TA = 25 C (On-Wafer Measurements)
Parameter
Insertion Loss RF - DC Isolation Input Return Loss Output Return Loss
MA4BN1840-1
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Frequency Minimum Value
18-40 GHz 18-40 GHz 18-40 GHz 18-40 GHz 30 30 15
Average Value
0.15 35 17 17
Maximum Value
0.2 -
Units
dB dB dB dB
RF Performance (On Wafer Measurements of Several Devices)
0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 10 15 20 25 30 35 40 45 50
J1-J2 INSERTION LOSS
freq, GHz
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 10 15 20 25 30 35 40 45 50
2
J1-J2 INPUT RETURN LOSS
freq, GHz
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
MA4BN1840-1
V 1.00
RF Performance (On Wafer Measurements of Several Devices)
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 10 15 20 25 30 freq, GHz 35 40 45 50
J2-J1 OUTPUT RETURN LOSS
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15
RF-DC ISOLATION
20
25
30
35
40
45
50
freq, GHz
3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz MA4BN1840-1 Outline
MA4BN1840-1
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MA4BN1840-1 Outline Dimensions
mm mils
Dim A B C D E F RF Bond Pads DC Bond Pads Thickness
Min. 57.5 41.7 31.6 15.7 31.7 20.5
Max. 58.7 42.3 32.4 16.5 32.5 21.7
Min. 1.46 1.06 0.80 0.40 0.81 0.52
Max. 1.49 1.08 0.82 0.42 0.83 0.55
5.1 X 5.9 REF. 5.1 X 5.9 REF. 0.005 REF.
.130 X .150 REF. .130 X .150 REF. 0.125 REF.
4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Assembly Considerations
The following precautions should be observed to avoid damaging these chips.
MA4BN1840-1
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Mounting
These chips have Ti-Pt-Au topside and backside metal. They can be die mounted with a gold-tin or a lead-tin-silver eutectic solder preform or electrically conductive silver epoxy. Mounting surface must be clean of organic contaminants and flat for best adhesion results.
Cleanliness
These chips should be handled in a clean environment. Do not attempt to clean die after installation.
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255 oC and a tool tip temperature of 265 oC. When hot gas is applied, the tool tip temperature should be 290 oC. The chip should not be exposed to temperatures greater than 320 oC for more than 20 seconds. No more than three seconds should be required for attachment.
Electro-Static Sensitivity
The MA4BN1840-1 Bias Network is ESD, Class 1 sensitive. The proper ESD handling procedures should be used.
Wire Bonding
Thermosonic wedge wire bonding using 0.003" x 0.00025" ribbon or ball bonding with 0.001" diameter gold wire is recommended. A stage temperature of 150 oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible for best performance.
Electrically Conductive Expoxy Die Attachment
Assembly should be preheated to 125-150 oC. A minimum amount of epoxy should be used, approximately 1 to 2 mils thickness for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's time-temperature schedule.
5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Operation of the MA4BN1840-1
MA4BN1840-1
V 1.00
Broadband operation of the MA4BN1840-1 Bias Network is accomplished by applying D.C. bias to the " DC " port on the die to the corresponding microwave device connected at the J1 and/or the J2 ports. An external blocking capacitor is required if the current is to be directed to only one RF output port as in a bias "T" configuration. This device can also be used as a ground return when the DC Bias Port is attached to the RF and D.C. ground. The small D.C. resistance ( < 1 ) of the D.C. Bias Port allows up to +/- 150 mA @ +/- 50 V to be delivered while still maintaining > 35 dB RF to D.C. isolation.
MA4BN1840-1 Schematic
J1 ( IN ) J2 ( OUT )
D.C. Ground
D.C. Bias
6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Biasing Applications Using the MA4BN1840-1
MA4BN1840-1
V 1.00
Shunt Diode Switch Biasing
D.C. Bias
J1 IN line < 5
J2 ( OPEN ) OUT
External D.C Block
External D.C Block
PIN Diodes
7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Series Diode Switch Biasing
D.C. Bias
MA4BN1840-1
V 1.00
J1 line < 5
J2 ( OPEN )
IN
OUT
External D.C Block
PIN Diodes
External D.C Block
J1 ( GND )
J2 ( GND )
D.C. Return
8 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Monolithic HMIC Integrated Bias Network 18 - 40 GHz Series - Shunt Diode Switch Biasing
D.C. Bias
MA4BN1840-1
V 1.00
J1 line < 5
J2 ( OPEN )
IN
OUT
External D.C Block
PIN Diodes
External D.C Block
J1 ( GND )
J2 ( GND )
D.C. Return
9 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300

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