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| Switching Diodes MA4X193 Silicon epitaxial planar type Unit : mm Silicon epitaxial planar type 0.65 0.15 2.8 - 0.3 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 0.5 R 0.2 1.1 - 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 80 80 70 150 250 150 -55 to +150 Unit V V mA mA mA C C 0.4 0.2 1: Cathode 1 3: Anode 3 Anode 2 Cathode 4 2: Cathode 2, 3 4: Anode 1, 4 Mini Type Package (4-pin) Marking Symbol: M2Z Internal Connection 4 3 0 to 0.1 0.1 to 0.3 0.8 1 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 70 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 15 10 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.16 - 0.06 + 0.1 0.6 - 0 * Mini type 4-pin package, contained four elements * Short reverse recovery time trr * Bridge diodes for surface mounting * Anode common + cathode common composite product 1.9 0.2 2.9 - 0.05 0.95 4 1 + 0.2 0.95 0.5 + 0.1 3 0.4 - 0.05 2 + 0.1 0.4 - 0.05 1.45 I Features + 0.1 1 MA4X193 4-1 and 4-3 pins (anode common) characteristics charts IF V F 103 104 Ta = 150C 1.4 Switching Diodes IR V R 1.6 VF Ta 102 103 Forward current IF (mA) Reverse current IR (nA) Forward voltage VF (V) 1.2 1.0 0.8 IF = 100 mA 0.6 0.4 0.2 10 mA 3 mA 100C 102 25C 10 10 1 Ta = 150C 100C 25C 10-1 - 20C 1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-1 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 104 VR = 75 V Ct VR 8 7 f = 1 MHz Ta = 25C 1 000 300 100 30 10 3 1 0.3 0.1 0.03 IF (surge) tW Ta = 25C IF(surge) tW Non repetitive Terminal capacitance Ct (pF) 103 35 V 6V Reverse current IR (nA) 6 5 4 3 2 1 102 10 1 10-1 -40 0 0 40 80 120 160 200 0 20 40 60 80 100 120 Forward surge current IF(surge) (A) 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 Switching Diodes 1-2 and 3-2 pins (cathode common) characteristics charts IF V F 103 105 MA4X193 IR V R Ta = 150C 1.6 1.4 VF Ta 102 104 Forward current IF (mA) Reverse current IR (nA) Forward voltage VF (V) 100C 103 1.2 1.0 0.8 0.6 0.4 0.2 IF = 100 mA 10 1 Ta = 150C 100C 25C 102 25C 10 mA 3 mA 10-1 - 20C 10 10-2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 105 VR = 75 V 35 V 6V Ct VR 1.2 f = 1 MHz Ta = 25C 1 000 300 100 30 10 3 1 0.3 0.1 0.03 IF (surge) tW Ta = 25C IF(surge) tW Non repetitive Terminal capacitance Ct (pF) 104 1.0 0.8 103 0.6 102 0.4 10 0.2 1 -40 0 40 80 120 160 200 0 Forward surge current IF(surge) (A) Reverse current IR (nA) 0 20 40 60 80 100 120 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 3 |
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