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| Schottky Barrier Diodes (SBD) MA4X796 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features * Two MA3X787s in the same direction are contained in one package * Allowing to rectify under (IF(AV) = 100 mA) condition * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * Low VF (forward rise voltage), with high rectification efficiency * Reverse voltage VR (DC value) = 50 V guaranteed 2.8 - 0.3 0.65 0.15 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 0.5 R 1.9 0.2 2.9 - 0.05 0.95 4 1 + 0.2 0.95 0.5 + 0.1 3 0.4 - 0.05 2 0.2 1.1 - 0.1 + 0.2 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 VR VRRM IFM IF(AV) 50 50 300 200 100 70 V V mA 0.4 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) mA Marking Symbol: M4B Internal Connection Non-repetitive peak forward surge current*1 Junction temperature Storage temperature IFSM Tj Tstg 1 125 -55 to +125 A 4 C C 3 2 1 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 25 3 Conditions Min Typ Max 30 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 Parameter Symbol Rating Unit 0.1 to 0.3 0.8 I Absolute Maximum Ratings Ta = 25C 0.16 - 0.06 + 0.1 0.6 - 0 + 0.1 0.4 - 0.05 1.45 + 0.1 1 MA4X796 IF V F 103 0.8 0.7 Schottky Barrier Diodes (SBD) VF Ta IR VR 104 Ta = 125C 102 103 Forward voltage VF (V) Forward current IF (A) 0.6 0.5 IF = 100 mA 0.4 0.3 0.2 10 mA 0.1 3 mA Ta = 125C 10 75C 25C - 20C 1 Reverse current IR (A) 75C 102 10 25C 10-1 1 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-1 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 104 VR = 50 V 60 Ct VR 1 000 300 IF(surge) tW Ta = 25C IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 Terminal capacitance Ct (pF) 103 Reverse current IR (A) 30 V 10 V 50 40 102 30 10 20 1 10 10-1 -40 0 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward surge current IF(surge) (A) 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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