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| MBR30H90PT & MBR30H100PT New Product Vishay Semiconductors formerly General Semiconductor High-Voltage Dual Schottky Rectifiers Features TO-247AD 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10 Reverse Voltage 90 to 100V Forward Current 30A 30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10 TYP. BOTH SIDES 1 2 3 0.086 (2.18) 0.076 (1.93) 1 REF. BOTH SIDES 0.118 (3.0) 0.108 (2.7) * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Dual rectifier construction, positive center-tap * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * High current capability, low forward voltage drop * High surge capability * For use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications * Guardring for overvoltage protection Mechanical Data Case: JEDEC TO-247AD molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds, 0.17" (4.3mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs max. Weight: 0.2 oz., 5.6 g Ratings per leg at TA = 25C unless otherwise specified. 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) PIN 1 PIN 3 PIN 2 CASE 0.030 (0.76) 0.020 (0.51) Dimensions in inches and (millimeters) 0.225 (5.7) 0.205 (5.2) 0.048 (1.22) 0.044 (1.12) Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Total device Per leg Symbol VRRM VRWM VDC IF(AV) IFRM IFSM IRRM EAS dv/dt RJC TJ MBR30H90PT MBR30H100PT 90 90 90 30 15 30 265 1.0 7.5 10,000 1.6 -65 to +175 100 100 100 Unit V V V A A A A mJ V/s C/W C Peak repetitive forward current per leg at TC=105C (rated VR, square wave, 20 KHZ) Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current at tp = 2s, f = 1kHz Non-repetitive avalanche energy (IAS = 0.5A, L = 60mH) Voltage rate of change at (rated VR) Thermal resistance from junction to case per leg Operating junction and storage temperature range Electrical Characteristics Parameter Maximum instantaneous forward voltage per leg at: (1) IF IF IF IF = = = = Ratings at 25C ambient temperature unless otherwise specified. Symbol 15A, TJ 15A, TJ 30A, TJ 30A, TJ = = = = 25C 125C 25C 125C MBR30H90PT MBR30H100PT 0.82 0.67 0.93 0.80 5.0 6.0 Unit VF V Maximum instantaneous reverse current at rated DC blocking voltage per leg (1) Note: (1) Pulse test: 300s pulse width, 1% duty cycle TJ = 25C TJ = 125C IR A mA Document Number 88678 02-Jul-02 www.vishay.com 1 MBR30H90PT & MBR30H100PT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves Fig. 1 - Forward Derating Curve 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 Fig. 2 - Typical Instantaneous Forward Characteristics Per Leg IF -- Instantaneous Forward Current (A) 100 35 Average Forward Current (A) 10 TJ = 175C 150C 1.0 125C 100C 0.1 25C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 3 - Typical Reverse Characteristics Per Leg 10000 TJ = 150C 10000 Fig. 4 - Typical Junction Capacitance Per Leg 100 125C 100C Junction Capacitance (pF) 100 1000 IR -- Instantaneous Reverse Current (A) 1000 10 1 0.1 100 25C 0.01 20 40 60 80 10 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) www.vishay.com 2 Document Number 88678 02-Jul-02 |
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