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MBRA120ET3 Surface Mount Schottky Power Rectifier
SMA Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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* * * * * * * * * * * * * *
Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Optimized for Low Leakage Current Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead Available in 12 mm Tape, 5000 Units per 13 inch Reel Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) Marking: B1E2
SCHOTTKY BARRIER RECTIFIER 1 AMPERE 20 VOLTS
Mechanical Characteristics: MARKING DIAGRAM
B1E2
SMA CASE 403D PLASTIC
B1E2 = Device Code
ORDERING INFORMATION
Device MBRA120ET3 Package SMA Shipping 5000/Tape & Reel
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 125C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol VRRM VRWM VR IO IFSM Value 20 Unit V
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1.0 40
A A
Tstg TJ dv/dt
-55 to +150 -55 to +150 10,000
C C V/ms
(c) Semiconductor Components Industries, LLC, 2003
1
December, 2003 - Rev. 2
Publication Order Number: MBRA120ET3/D
MBRA120ET3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance - Junction-to-Lead Thermal Resistance - Junction-to-Ambient Symbol RJL RJA 5 mm x 5 mm (Note 2) 34 138 1 Inch x 1/2 inch (Note 3) 20 77 Unit C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current, See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 1. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads). 3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads). IR VF TJ = 25C 0.455 0.530 0.595 TJ = 25C 10 1.0 0.5 TJ = 100C 0.360 0.455 0.540 TJ = 100C 1600 500 300 mA V
IF, INSTANTANEOUS FORWARD CURRENT (A)
10 150C 125C 100C 25C 1 -40C
IF, INSTANTANEOUS FORWARD CURRENT (A)
10 150C 100C 25C 1
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1E-02 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1E-03 1E-04 150C 125C 100C 75C
1E-02 150C 1E-03 100C 1E-04 1E-05 1E-06 25C 1E-07 1E-08
1E-05 1E-06
1E-07 1E-08 0 2 4 6 8
25C
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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2
MBRA120ET3
PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 SQUARE WAVE dc
0.7 0.6 dc 0.5 SQUARE WAVE 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IO, AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (C)
Figure 5. Current Derating
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 6. Forward Power Dissipation
1
D = 0.5 0.3 0.2 0.1 0.05 0.02
0.1
0.01 SINGLE PULSE
0.001 0.00001 0.0001 0.001 0.01 0.1 T, TIME (sec) 1 10 100 1000
Figure 7. Thermal Resistance
1000
C, CAPACITANCE (pF)
TJ = 25C
100
10 0 2 4 6 8 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Junction Capacitance
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3
MBRA120ET3
PACKAGE DIMENSIONS
SMA CASE 403D-02 ISSUE A
S A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. DIM A B C D H J K S INCHES MIN MAX 0.160 0.180 0.090 0.115 0.075 0.095 0.050 0.064 0.002 0.006 0.006 0.016 0.030 0.060 0.190 0.220 MILLIMETERS MIN MAX 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.05 0.15 0.15 0.41 0.76 1.52 4.83 5.59
D
B
POLARITY INDICATOR OPTIONAL AS NEEDED
C
K
J
H
SOLDERING FOOTPRINT*
0.157 4.0
0.0787 2.0
0.0787 2.0
inches mm
SMA FOOTPRINT
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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4
MBRA120ET3/D

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