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| Switching Diode MCL4448 Silicon epitaxial planar type Formosa MS Micro-MELF Features Low power loss, high efficiency High reliability High speed ( trr < 4 ns ) SOLDERABLE ENDS .079(2.00) .071(1.80) .008(.20) Mechanical data Case : Glass, Micro-MELF Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.05 gram .049(1.25) .047(1.20) Dimensionsininchesand(millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Non-Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward voltage Forward current Average forward current Power dissipation Junction temperature Storage temperature VR = 0 tp = 1 us CONDITIONS Symbol VRM VR IFSM IFRM IF IFAV PV Tj TSTG -55 MIN. TYP. MAX. 100 75 0.5 500 300 150 500 125 +125 UNIT V V A mA mA mA mW o o C C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage IF = 5mA IF = 10mA VR = 20V Reverse current VR = 20V , Tj = 150 o C VR = 75V Breakdown current Diode capacitance Rectification efficiency IR = 100uA , TP /T = 0.01 TP = 0.3ms VR = 0 , f = 1MHz , VHF = 50mV VHF = 2V , f = 100MHz IF = IR = 10mA , IRR = 1mA Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM CONDITIONS Symbol VF VF IR IR IR V(BR) CD nR trr trr 45 8 4 100 4.0 MIN. 0.62 0.86 TYP. MAX. 0.72 1.00 25 50 5.0 UNIT V V nA uA uA V pF % ns ns RATING AND CHARACTERISTIC CURVES (MCL4448) FIG.1-TYPICAL FORWARD CHARACTERISTICS 1000 FIG.3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,(mA) Tj=25 C 100 REVERSE CURRENT, (nA) 1000 Tj=25 C Pulse Width 300us 1% Duty Cycle Scattering Limit 10 100 Scattering Limit 1.0 10 0.1 0 .4 .8 1.2 1.6 2.0 FORWARD VOLT AGE,(V) 1 1 10 REVERSE VOLTAGE 100 FIG.2 - TYPICAL DIODE CAPACITANCE 3.5 10 3.0 3 FIG.4 - REVERSE CURRENT VS JUNCTION TEMPERATURE DIODE CAPACITANCE,(pF) REVERSE CURRENT, (uA) 2.5 2.0 1.5 1.0 0.5 0 10 2 =75 VR 10 V AX /M .V U AL ES 1 =7 VR 5V /T U AL .V YP ES 0.1 1 10 100 1000 10 -1 VR =2 0V / L VA P. TY S UE REVERSE VOLTAGE,(V) 10 -2 0 100 200 o JUNCTION TEMPERATURE ( C) |
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