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 Fast Recovery Epitaxial Diode (FRED) Module
Preliminary data
MEO 500-06 DA
VRRM = 600 V IFAVM = 514 A trr = 250 ns
3
3
1
VRSM V 600
VRRM V 600
Type
1
MEO 500-06DA
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TC = 75C TC = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 726 514 2680 4800 5280 4320 4750 115200 117100 93300 94800 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s C C C W V~ V~
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873
q q q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg TSmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 300 A; IF = 520 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ TVJ TVJ TVJ = 125C = 25C = 125C = 25C TC = 25C 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque (M6) Terminal connection torque (M6) Creeping distance on surface Strike distance through air Maximum allowable acceleration
1750 3000 3600
Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q q q q
2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. 12.7 9.6 50 150 mm mm m/s2 g
Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses
q q q q
Characteristic Values (per diode) typ. max. 24 6 160 1.17 1.36 1.41 1.52 0.85 1.09 0.114 0.071 TVJ = 100C TVJ = 25C TVJ = 100C 250 300 88 132 mA mA mA V V V V V mW K/W K/W ns A A
Dimensions in mm (1 mm = 0.0394")
VF
For power-loss calculations only DC current DC current IF = 600 A VR= 300 V -di/dt = 800 A/ms
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
749
MEO 500-06 DA
800 A IF 600
20 T = 100C VJ V = 300V C R Qr 15
IRM
200 T = 100C VJ VR = 300V A 150
400
TVJ=125C TVJ=25C
10
IF=1200A IF= 600A IF= 300A
IF=1200A 100 IF= 600A IF= 300A
200
5
50
0 0.0
0.4
0.8
1.2 VF
1.6 V 2.0
0 100
0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
Fig. 1 Forward current IF versus max. voltage drop VF per leg
1.4
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
450 ns
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
60 V 50 VFR 40 2.0
TVJ= 100C VR = 300V
tfr
TVJ= 100C IF = 600A
3.0 s 2.5 tfr
1.2 Kf 1.0
400 trr 350
0.8
IRM Qr
300
IF=1200A IF= 600A IF= 300A
VFR
30 20 1.5 1.0 0.5 0.0 600 A/ms 1000 800 diF/dt
0.6
250
10 0 0 200 400 600 A/ms 1000 800 -diF/dt 0 200 400
0.4 0 40 80 120 C 160 TVJ
200
Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ
0.12 K/W 0.10 0.08 ZthJS thJH 0.06 0.04 0.02 0.00 0.001
Fig. 5 Typ. recovery time trr versus -diF/dt
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Constants for ZthJS calculation: i 1 2 3 4 Rthi (K/W) 0.001 0.004 0.027 0.082 ti (s) 0.08 0.024 0.112 0.464
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
2-2
814


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