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MITSUBISHI SEMICONDUCTOR
MGF0917A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
* High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm * High power gain Gp=21dB(TYP.) @f=1.9GHz * High power added efficiency add=38%(TYP.) @f=1.9GHz,Pin=4dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=75mA * Rg=2k
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 200 -0.6 2.5 2 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po add GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=0.5mA VDS=3V,ID=75mA VDS=10V,ID=75mA,f=1.9GHz Pin=4dBm VDS=10V,ID=75mA,f=1.9GHz Vf Method -1.0 23 -
Limits
Typ. 150 70 24 38 21 0.9 55 Max. 200 -5.0 75
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0917A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin 30 25 20 Po(dBm) PAE 15 Gp 10 5 0 -15 -10 -5 0 5 10 Pin(dBm) 20 10 0 30 60 50 Po Gp(dB),PAE(%)
IM3(dBc)
Vds=10V Id(off)=75mA f=1.9GHz
40
Pi(SCL) vs.Po(SCL),IM3 30 25 20 15 10 5 0 -5 -10 -15 -20 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 0 5 10 15
Po(SCL)(dBm)
VD=10V ID=75mA f1=1.90GHz f2=1.91GHz
Po
IM3
-20
-15
-10
-5
Pin(SCL)(dBm)
Mitsubishi Electric
June/2004
MGF0917A
freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200
S PARAMETERS
S11 (ang) -33.12 -52.23 -67.81 -80.66 -91.42 -100.60 -108.60 -115.73 -122.21 -128.21 -133.86 -139.27 -144.52 -149.72 -155.02 -160.60 -166.70 -173.68 179.59 165.49 149.83 121.51 81.43 36.33 -5.95 -39.56 -62.30 -75.69 -83.49 -88.74
(Ta=25C , VDS=10V,ID=75mA, Reference Plane see Fig.1)
S21 S12 (mag) 0.013 0.017 0.020 0.023 0.025 0.026 0.026 0.026 0.025 0.024 0.023 0.023 0.023 0.025 0.028 0.032 0.037 0.043 0.049 0.055 0.061 0.066 0.070 0.072 0.072 0.070 0.066 0.060 0.054 0.047 (ang) 60.97 47.27 33.78 20.83 8.72 -2.30 -12.04 -20.38 -27.27 -32.78 -37.04 -40.28 -42.81 -44.98 -47.24 -50.03 -53.82 -59.06 -66.14 -75.38 -86.96 -100.89 -116.97 -134.73 -153.36 -171.68 174.68 163.25 153.93 146.49
2.0
S22 (mag) 0.542 0.574 0.613 0.654 0.694 0.732 0.765 0.793 0.816 0.834 0.848 0.859 0.867 0.874 0.880 0.885 0.891 0.895 0.897 0.895 0.884 0.863 0.837 0.802 0.774 0.759 0.758 0.766 0.778 0.792 (ang) -37.01 -55.99 -71.29 -84.14 -95.18 -104.65 -112.60 -119.01 -123.90 -127.39 -129.77 -131.44 -132.90 -134.71 -137.32 -140.94 -145.42 -149.92 -152.77 -155.52 -157.78 -158.81 -158.40 -156.85 -154.83 -153.13 -152.41 -153.06 -154.90 -157.02
K 0.21 0.27 0.32 0.37 0.42 0.48 0.55 0.61 0.68 0.75 0.81 0.84 0.88 0.86 0.82 0.79 0.76 0.77 0.85 0.90 1.01 1.08 1.13 1.20 1.21 1.22 1.24 1.32 1.39 1.51
MAG/MSG
(mag) 0.981 0.963 0.950 0.940 0.933 0.928 0.925 0.922 0.920 0.919 0.917 0.915 0.911 0.905 0.895 0.881 0.860 0.830 0.789 0.734 0.662 0.581 0.521 0.525 0.622 0.734 0.820 0.876 0.905 0.920
(mag) 4.043 3.628 3.204 2.813 2.480 2.190 1.944 1.755 1.598 1.473 1.381 1.314 1.270 1.251 1.250 1.268 1.310 1.366 1.451 1.557 1.670 1.779 1.864 1.872 1.760 1.553 1.319 1.104 0.928 0.785
(ang) 146.73 130.91 115.76 101.60 88.63 76.98 66.64 57.57 49.63 42.64 36.36 30.53 24.85 19.04 12.78 5.79 -2.21 -11.46 -22.14 -34.40 -48.32 -63.88 -80.99 -99.47 -119.01 -139.19 -159.45 -179.08 170.48 158.33
(dB) 24.93 23.29 22.05 20.87 19.97 19.25 18.74 18.29 18.06 17.88 17.78 17.57 17.42 16.99 16.50 15.98 15.49 15.02 14.71 14.52 13.81 12.54 12.10 11.48 11.11 10.65 10.03 9.25 8.64 8.01
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
1.20
(3)
Reference Plane (2)
4.00 0.25
(2) 0.6
2.5
(1) Gate (2) Drain (3) Source
0.3
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
Mitsubishi Electric June/2004
2.8
MITSUBISHI SEMICONDUCTOR
MGF0917A
L & S BAND GaAs FET [ SMD non - matched ]
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Mitsubishi Electric
June/2004

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