View MH32S72APHB-8_1278982.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
DESCRIPTION
The MH32S72APHB is 33554432 - word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard 16Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required. This is a socket type - memory modules, suitable for easy interchange or addition of modules.
85pin
1pin
94pin 95pin
10pin 11pin
FEATURES
Frequency -6 -7 -8 133MHz 100MHz 100MHz CLK Access Time
(Component SDRAM)
5.4ns(CL=3) 6.0ns(CL=2) 6.0ns(CL=3)
124pin 125pin 40pin 41pin
Utilizes industry standard 16M x 8 Sy nchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line package)
single 3.3V0.3V power supply Max. Clock frequency -6:133MHz,-7,8:100MHz Fully synchronous operation referenced to clock rising edge 4 bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4/8/Full Page(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycle /64ms LVTTL Interface Discrete IC and module design conform to PC100/PC133 specification.
168pin 84pin
APPLICATION
PC main memory MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 1 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 PIN NAME VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 CB0 CB1 VSS NC NC VDD /WE0 DQMB0 DQMB1 /S0 NC VSS A0 A2 A4 A6 A8 A10 BA1 VDD VDD CK0 PIN NO. 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 PIN NAME VSS NC /S2 DQMB2 DQMB3 NC VDD NC NC CB2 CB3 VSS DQ16 DQ17 DQ18 DQ19 VDD DQ20 NC NC CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS CK2 NC WP SDA SCL VDD PIN NO. 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 PIN NAME VSS DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VDD DQ46 DQ47 CB4 CB5 VSS NC NC VDD /CAS DQMB4 DQMB5 /S1 /RAS VSS A1 A3 A5 A7 A9 BA0 A11 VDD CK1 NC PIN NO. 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 PIN NAME VSS CKE0 /S3 DQMB6 DQMB7 NC VDD NC NC CB6 CB7 VSS DQ48 DQ49 DQ50 DQ51 VDD DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 VSS CK3 NC SA0 SA1 SA2 VDD
NC = No Connection
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 2 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM Block Diagram
/S0 /S1 DQMB0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQMB1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 /S2 /S3 DQMB2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQMB3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31
DQM /CS DQM /CS DQM /CS DQM /CS DQM /CS DQM /CS DQM /CS DQM /CS
DQMB4
DQM /CS
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
D0
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
D9
DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQMB5
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
DQM /CS
D5
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
D14
DQM /CS
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7
D1
I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
D10
DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7
DQM /CS
D6
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7
D15
DQM /CS
DQM /CS
D2
D11
DQMB6 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQMB7 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 I/O I/O I/O I/O I/O I/O I/O I/O 0 1 2 3 4 5 6 7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 D0 - D8 3.3V 10K D9 - D17
DQM /CS DQM /CS DQM /CS DQM /CS
D3
D12
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
D7
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
D16
D4
D13
I/O I/O I/O I/O I/O I/O I/O I/O CK0 CK1 CK2 CK3 SCL WP 47K
0 1 2 3 4 5 6 7
D8
I/O I/O I/O I/O I/O I/O I/O I/O
0 1 2 3 4 5 6 7
D17
/RAS /CAS /WE BA0,BA1,A<11:0> Vcc Vss
D0 D0 D0 D0 D0
-
D17 D17 D17 D17 D17 CKE1
CKE0
5SDRAMs 5SDRAMs 4SDRAMs+3.3pF cap. 4SDRAMs+3.3pF cap. SERIAL PD SDA A0 A1 A2 SA0 SA1 SA2
D0 - D17
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 3 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Serial Presence Detect Table I
Byte 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Function described Defines # bytes written into serial memory at module mfgr Total # bytes of SPD memory device Fundamental memory type # Row Addresses on this assembly # Column Addresses on this assembly # Module Banks on this assembly Data Width of this assembly... ... Data Width continuation Voltage interface standard of this assembly
SDRAM Cycletime at Max. Supported CAS Latency (CL). -6 -7,-8 -6 -7,-8
SPD enrty data 128 256 Bytes SDRAM A0-A11 A0-A9 2BANK x72 0 LVTTL 7.5ns 10ns 5.4ns 6ns
ECC
SPD DATA(hex) 80 08 04 0C 0A 02 48 00 01 75 A0 54 60 02 80 08 08 01 8F 04 06 01 01 00 0E A0 A0 D0 60 60 70 00 00 17 14 0F 14 17 14 2D 32
Cycle time for CL=3 SDRAM Access from Clock tAC for CL=3 DIMM Configuration type (Non-parity,Parity,ECC) Refresh Rate/Type SDRAM width,Primary DRAM Error Checking SDRAM data width
self refresh(15.625uS) x8 x8 1 1/2/4/8/Full page 4bank 2/3 0 0
non-buffered,non-registered Precharge All,Auto precharge -6 -7 -8
Minimum Clock Delay,Back to Back Random Column Addresses
Burst Lengths Supported # Banks on Each SDRAM device CAS# Latency CS# Latency Write Latency SDRAM Module Attributes SDRAM Device Attributes:General SDRAM Cycle time(2nd highest CAS latency) Cycle time for CL=2
10ns 10ns 13ns 6ns 6ns 7ns N/A
24
SDRAM Access form Clock(2nd highest CAS latency)
-6 -7 -8
tAC for CL=2 25 26 27 28 29 30 SDRAM Cycle time(3rd highest CAS latency)
SDRAM Access form Clock(3rd highest CAS latency)
Precharge to Active Minimum Row Active to Row Active Min. RAS to CAS Delay Min Active to Precharge Min
-6 -7,-8 -6 -7,-8 -6 -7,-8 -6 -7,-8
N/A 22.5ns 20ns 15ns 20ns 22.5ns 20ns 45ns 50ns
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 4 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Serial Presence Detect Table II
31 32 33 Density of each bank on module Command and Address signal input setup time Command and Address signal input hold time
-6 -7,-8 -6 -7,-8
128MByte 1.5ns 2ns 0.8ns 1ns 1.5ns 2ns 0.8ns 1ns option rev 1.2B Check sum for -6 Check sum for -7 Check sum for -8
20 15 20 08 10 15 20 08 10 00 12 C8 29 69 1CFFFFFFFFFFFFFF 01 02 03 04
4D483332533732415048422D362020202020 4D483332533732415048422D372020202020 4D483332533732415048422D382020202020
34 35 36-61 62 63
Data signal input setup time Data signal input hold time Superset Information (may be used in future) SPD Revision Checksum for bytes 0-62
-6 -7,-8 -6 -7,-8
64-71 72
Manufactures Jedec ID code per JEP-108E Manufacturing location
MITSUBISHI Miyoshi,Japan Tajima,Japan NC,USA Germany MH32S72APHB-6
73-90
Manufactures Part Number
MH32S72APHB-7 MH32S72APHB-8
91-92 93-94 95-98 99-125 126
Revision Code Manufacturing date Assembly Serial Number Manufacture Specific Data Intetl specification frequency
-6,-7 -8
PCB revision year/week code serial number option 100MHz CL=2/3,AP,CK0-3 CL=3,AP,CK0-3 open
rrrr yyww ssssssss 00 64 FF FD 00
127 128+
Intel specification CAS# Latency support Unused storage locations
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 5 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
PIN FUNCTION
CK (CK0 ~ CK3) Input Master Clock:All other inputs are referenced to the rising edge of CK Clock Enable:CKE controls internal clock.When CKE is low,internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE becomes asynchronous input.Self refresh is maintained as long as CKE is low. Chip Select: When /S is high,any command means No Operation. Combination of /RAS,/CAS,/WE defines basic commands. A0-11 specify the Row/Column Address in conjunction with BA.The Row Address is specified by A0-11.The Column Address is specified by A0-9.A10 is also used to indicate precharge option.When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, all banks are precharged. Bank Address:BA0,1 is not simply BA.BA specifies the bank to which a command is applied.BA0,1 must be set with ACT,PRE,READ,WRITE commands
CKE0,1
Input
/S (/S0~3) /RAS,/CAS,/WE
Input Input
A0-11
Input
BA0,1 DQ0-63 CB0-7 DQMB0-7
Input
Input/Output Data In and Data out are referenced to the rising edge of CK Input Din Mask/Output Disable:When DQMB is high in burst write.Din for the current cycle is masked.When DQMB is high in burst read,Dout is disabled at the next but one cycle.
Vdd,Vss SCL SDA SA0-3
Power Supply Power Supply for the memory mounted module. Input Output Input Serial clock for serial PD Serial data for serial PD Address input for serial PD
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 6 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
BASIC FUNCTIONS
The MH32S72APHB provides basic functions,bank(row)activate,burst read / write, bank(row)precharge,and auto / self refresh. Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and precharge option,respectively. To know the detailed definition of commands please see the command truth table.
CK /S /RAS /CAS /WE CKE A10
Chip Select : L=select, H=deselect Command Command Command Ref resh Option @ref resh command Precharge Option @precharge or read/write command def ine basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H] ACT command activates a row in an idle bank indicated by BA. Read(READ) [/RAS =H,/CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA.First output data appears after /CAS latency. When A10 =H at this command,the bank is deactivated after the burst read(auto-precharge,READA). Write(WRITE) [/RAS =H, /CAS = /WE =L] WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write(auto-precharge,WRITEA). Precharge(PRE) [/RAS =L, /CAS =H,/WE =L] PRE command deactivates the active bank indicated by BA. This command also term inates burst read / write operation. When A10 =H at this command, both banks are deactivated(precharge all, PREA). Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H] REFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically.
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 7 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
COMMAND TRUTH TABLE
COMMAND Deselect No Operation Row Adress Entry & Bank Activate Single Bank Precharge Precharge All Bank Column Address Entry & Write Column Address Entry & Write with AutoPrecharge Column Address Entry & Read Column Address Entry & Read with Auto Precharge Auto-Refresh Self-Refresh Entry Self-Refresh Exit Burst Terminate Mode Register Set MNEMONIC DESEL NOP ACT PRE PREA WRITE CKE CKE n-1 n H H H H H H X X X X X X /S H L L L L L /RAS /CAS X H L L L H X H H H H L /WE BA0,1 A11 X H H L L L X X V V X V X X V X X V A10 A0-9 X X V L H L X X V X X V
WRITEA
H
X
L
H
L
L
V
V
H
V
READ
H
X
L
H
L
H
V
V
L
V
READA REFA REFS REFSX TERM MRS
H H H L L H H
X H L H H X X
L L L H L L L
H L L X H H L
L L L X H H L
H H H X H L L
V X X X X X L
V X X X X X L
H X X X X X L
V X X X X X V*1
H =High Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number NOTE: 1.A7-9 = 0, A0-6 = Mode Address
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 8 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
FUNCTION TRUTH TABLE
Current State IDLE /S H L L L L L L L ROW ACTIVE H L L L L L L L L READ H L L L /RAS /CAS X H H H L L L L X H H H H L L L L X H H H X H H L H H L L X H H L L H H L L X H H L /WE X H L X H L H L X H L H L H L H L X H L H X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 Address Command DESEL NOP TBST ACT PRE/PREA REFA MRS DESEL NOP TBST READ/READA WRITE/ WRITEA ACT PRE/PREA REFA MRS DESEL NOP TBST NOP NOP ILLEGAL*2 Bank Active,Latch RA NOP*4 Auto-Refresh*5 Mode Register Set*5 NOP NOP NOP Begin Read,Latch CA, Determine Auto-Precharge Begin Write,Latch CA, Determine Auto-Precharge Bank Active/ILLEGAL*2 Precharge/Precharge All ILLEGAL ILLEGAL NOP(Continue Burst to END) NOP(Continue Burst to END) Terminate Burst Terminate Burst,Latch CA, READ/READA Begin New Read,Determine Auto-Precharge*3 Terminate Burst,Latch CA, L L L L L H L L L L L H H L L L H L H L BA,CA,A10 WRITE/WRITEA Begin Write,Determine AutoPrecharge*3 BA,RA BA,A10 X Op-Code, Mode-Add ACT PRE/PREA REFA MRS Bank Active/ILLEGAL*2 Terminate Burst,Precharge ILLEGAL ILLEGAL Action
READ/WRITE ILLEGAL*2
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 9 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
FUNCTION TRUTH TABLE(continued)
Current State WRITE /S H L L L /RAS /CAS X X H H H H H L /WE Address X X HX L BA H BA,CA,A10 Action NOP(Continue Burst to END) NOP(Continue Burst to END) Terminate Burst Terminate Burst,Latch CA, READ/READA Begin Read,Determine AutoPrecharge*3 DESEL NOP TBST WRITE/ WRITEA ACT PRE/PREA REFA MRS DESEL NOP TBST READ/READA WRITE/ WRITEA ACT PRE/PREA REFA MRS DESEL NOP Terminate Burst,Latch CA, Begin Write,Determine AutoPrecharge*3 Bank Active/ILLEGAL*2 Terminate Burst,Precharge ILLEGAL ILLEGAL NOP(Continue Burst to END) NOP(Continue Burst to END) ILLEGAL ILLEGAL ILLEGAL Bank Active/ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL NOP(Continue Burst to END) NOP(Continue Burst to END) Command
L L L L L READ with AUT O PRECHARGE H L L L L L L L L WRITE with AUT O PRECHARGE H L L L L L L L L
H L L L L X H H H H L L L L X H H H H L L L L
L H H L L X H H L L H H L L X H H L L H H L L
L H L H L X H L H L H L H L X H L H L H L H L
BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add
TBST ILLEGAL READ/READA ILLEGAL WRITE/ WRITEA ACT PRE/PREA REFA MRS ILLEGAL Bank Active/ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 10 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
FUNCTION TRUTH TABLE(continued)
Current State PRE CHARGING /S H L L L L L L L ROW ACT IVATING H L L L L L L L WRITE RECOVERING H L L L L L L L /RAS /CAS X H H H L L L L X H H H L L L L X H H H L L L L X H H L H H L L X H H L H H L L X H H L H H L L /WE X H L X H L H L X H L X H L H L X H L X H L H L X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add Address Command DESEL NOP TBST ACT PRE/PREA REFA MRS DESEL NOP TBST ACT PRE/PREA REFA MRS DESEL NOP TBST ACT PRE/PREA REFA MRS Action NOP(Idle after tRP) NOP(Idle after tRP) ILLEGAL*2 ILLEGAL*2 NOP*4(Idle after tRP) ILLEGAL ILLEGAL NOP(Row Active after tRCD NOP(Row Active after tRCD ILLEGAL*2 ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL NOP NOP ILLEGAL*2 ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL
READ/WRITE ILLEGAL*2
READ/WRITE ILLEGAL*2
READ/WRITE ILLEGAL*2
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 11 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
FUNCTION TRUTH TABLE(continued)
Current State REFRESHING /S H L L L L L L L MODE REGISTER SETTING H L L L L L L L /RAS /CAS X H H H L L L L X H H H L L L L X H H L H H L L X H H L H H L L /WE X H L X H L H L X H L X H L H L X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add X X BA BA,CA,A10 BA,RA BA,A10 X Op-Code, Mode-Add Address Command DESEL NOP TBST Action NOP(Idle after tRC) NOP(Idle after tRC) ILLEGAL
READ/WRITE ILLEGAL ACT PRE/PREA REFA MRS DESEL NOP TBST ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP(Idle after tRSC) NOP(Idle after tRSC) ILLEGAL
READ/WRITE ILLEGAL ACT PRE/PREA REFA MRS ILLEGAL ILLEGAL ILLEGAL ILLEGAL
ABBREVIATIONS: H = Hige Level, L = Low Level, X = Don't Care BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation NOTES: 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank. 3. Mus t satisfy bus contention, bus turn around, write recovery requirements. 4. NOP to bank precharging or in idle state.May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. ILLEGAL = Device operation and / or date-integrity are not guaranteed.
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 12 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
FUNCTION TRUTH TABLE FOR CKE
Current State SELF REFRESH*1 CKE n-1 H L L L L L L POWER DOWN H L L ALL BANKS IDLE*2 H H H H H H H L ANY STATE other than listed above H H L L CKE n X H H H H H L X H L H L L L L L L X H L H L /S X H L L L L X X X X X L H L L L L X X X X X /RAS /CAS X X H H H L X X X X X L X H H H L X X X X X X X H H L X X X X X X L X H H L X X X X X X /WE X X H L X X X X X X X H X H L X X X X X X X Add X X X X X X X X X X X X X X X X X X X X X X INVALID Exit Self-Refresh(Idle after tRC) Exit Self-Refresh(Idle after tRC) ILLEGAL ILLEGAL ILLEGAL NOP(Maintain Self-Refresh) INVALID Exit Power Down to Idle NOP(Maintain Self-Refresh) Refer to Function Truth Table Enter Self-Refresh Enter Power Down Enter Power Down ILLEGAL ILLEGAL ILLEGAL Refer to Current State = Power Down Refer to Function Truth Table Begin CK0 Suspend at Next Cycle*3 Exit CK0 Suspend at Next Cycle*3 Maintain CK0 Suspend Action
ABBREVIATIONS: H = High Level, L = Low Level, X = Don't Care NOTES: 1. CKE Low to High transition will re-enable CK and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT. 2. Power-Down and Self-Refresh can be entered only from the All banks idle State. 3. Mus t be legal command.
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 13 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
SIMPLIFIED STATE DIAGRAM
SELF REFRESH
REFS REFSX MRS
MODE REGISTER SET
REFA
IDLE
AUTO REFRESH
CKEL
CLK SUSPEND
CKEL CKEH TBST(for Full Page)
CKEH ACT
POWER DOWN
TBST(for Full Page)
ROW ACTIVE
WRITE WRITEA READA READ WRITE READ
CKEL
CKEL
WRITE SUSPEND
WRITE
CKEH
READ
CKEH
READ SUSPEND
WRITEA WRITEA CKEL READA
READA
CKEL
WRITEA SUSPEND
WRITEA
CKEH PRE
PRE PRE
READA
CKEH
READA SUSPEND
POWER APPLIED
POWER ON
PRE
PRE CHARGE Automatic Sequence Command Sequence
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 14 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or malfunctioning. 1. Apply power and start clock. Attempt to maintain CKE high, DQMB0-7 high and NOP condition at the inputs . 2. Maintain stable power, stable clock, and NOP input conditions for a minimum of 200us . 3. Issue precharge commands for all banks. (PRE or PREA) 4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands. 5. Issue a mode register set command to initialize the mode register. After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register(MRS). The mode register stores these date until the next MRS command, which may be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is ready for new command.
CK /S BA0 BA1 A11 A10 A9 0 0 0 0 WM A8 0 A7 A6 0 A5 A4 A3 BT A2 A1 A0 BL /RAS /CAS LTMODE /WE BA0,1 A11-0 BL 0 0 0 0 1 0 0 1 1 0 0 1 0 1 0 BT= 0 1 2 4 8 R R R FP SEQUENTIAL INTERLEAVED
V
BT= 1 1 2 4 8 R R R R
CL 000 001 010 LATENCY MODE 0 1 1 1 1 1 0 0 1 1 0 1 1 0 1 0 1
/CAS LATENCY R R 2 3 R R R R BURST SINGLE BIT
BURST LENGTH
101 110 111 BURST TYPE 0 1
WRITE MODE
R:Reserved for Future Use FP: Full Page
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 15 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
CK Command Address DQ CL= 3 BL= 4 /CAS Latency
Read Y Q0 Q1 Q2 Q3 Write Y D0 D1 D2 D3
Burst Length Burst Type
Burst Length
Initial Address BL A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 0 0 1 1 A0 0 1 0 1 8 0 1 0 1 0 1 4 0 1 0 2 1 1 0 2 3 0 3 0 1 0 1 1 2 4 5 6 7 0 1 5 6 7 0 1 2 6 7 0 1 2 3 7 0 1 2 3 0 0 1 2 3 1 2 3 4 0 1 2 3 1 2 3 4 2 3 4 5 Sequential 3 4 5 6 4 5 6 7 5 6 7 0
Column Addressing Interleaved 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 0 1 2 3 0 1 1 0 3 2 5 4 7 6 1 0 3 2 1 0 2 3 0 1 6 7 4 5 2 3 0 1 3 2 1 0 7 6 5 4 3 2 1 0 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 16 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
OPERATION DESCRIPTION
BANK ACTIVATE One of four banks is activated by an ACT command. An bank is selected by BA0-1. A row is selected by A0-11. Multiple banks can be active state concurrently by issuing multiple ACT commands. Minimum activation interval between one bank and another bank is tRRD. PRECHARGE An open bank is deactivated by a PRE command. A bank to be deactivated is designated by BA0-1. When multiple banks are active, a precharge all command (PREA, PRE + A10=H) deactivates all of open banks at the same time. BA0-1 are "Don't Care" in this case. Minimum delay time of an ACT command after a PRE command to the same bank is tRP. Bank Activation and Precharge All (BL=4, CL=2)
CK Command ACT
tRRD ACT tRCD Xb Xb 01 Yb 0 01 Qa0 Qa1 Qa2 Qa3 1 READ PRE tRP Xa Xa 00 ACT
A0-9,11 A10 BA0,1 DQ
Xa Xa 00
Precharge all
READ A READ command can be issued to any active bank. The start address is specified by A0-9 (x8) . 1st output data is available after the /CAS Latency from the READ. The consecutive data length is defined by the Burst Length. The address sequence of the burst data is defined by the Burs t Type. Minimum delay time of a READ command after an ACT command to the same bank is tRCD. When A10 is high at a READ command, auto-precharge (READA) is performed. Any command (READ, WRITE, PRE, ACT, TBST) to the same bank is inhibited till the internal precharge is complete. The internal precharge starts at the BL after READA. The next ACT command can be issued after (BL + tRP) from the previous READA. In any case, tRCD+BL > tRASmin must be met.
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 17 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Multi Bank Interleaving READ (BL=4, CL=2)
CK Command ACT
tRCD
READ Ya 0 00
ACT tRCD Xb Xb 01 Qa0 Qa1
READ PRE tRP Yb 0 01 Qa2 0 00 Qa3 Qb0
ACT Xa Xa 00 Qb1 Qb2 Qb3
A0-9, 11 A10 BA0,1 DQ
Xa Xa 00
READ with Auto-Precharge (BL=4, CL=2)
CK Command ACT
tRCD READ BL Ya 1 00 Qa0 Qa1 Qa2 Qa3 tRP Xa Xa 00 ACT
A0-9, 11 A10 BA0,1 DQ
Xa Xa 00
Internal precharge starts
Auto-Precharge Timing (READ BL=4)
CK Command ACT
tRCD READ BL Qa0 Qa0 Qa1 Qa1 Qa2 Qa2 Qa3 Qa3 ACT
CL=3 CL=2
DQ DQ
Internal precharge starts
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 18 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
WRITE A WRITE command can be issued to any active bank. The start address is specified by A0-9 (x8). 1s t input data is set at the same cycle as the WRITE. The consecutive data length to be written is defined by the Burst Length. The address sequence of burst data is defined by the Burs t Type. Minimum delay time of a WRITE command after an ACT command to the same bank is tRCD. From the last input data to the PRE command, the write recovery time (tWR) is required. When A10 is high at a WRITE command, auto-precharge (WRITEA) is performed. Any command (READ, WRITE, PRE, ACT, TBST) to the same bank is inhibited till the internal precharge is complete. The internal precharge starts at tWR after the last input data cycle. The next ACT command can be issued after (BL + tWR -1 + tRP) from the previous WRITEA. In any case, tRCD + BL + tWR -1 > tRASmin must be met.
WRITE (BL=4)
CK Command ACT
tRCD Write BL Ya 0 00 tWR Da0 Da1 Da2 Da3 0 PRE tRP Xa Xa 00 ACT
A0-9, 11 A10 BA0,1 DQ
Xa Xa 00
WRITE with Auto-Precharge (BL=4)
CK Command ACT
tRCD Write BL Ya 1 00 tWR Da0 Da1 Da2 Da3 tRP Xa Xa 00 ACT
A0-9, 11 A10 BA0,1 DQ
Xa Xa 00
Internal precharge begins
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 19 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
BURST INTERRUPTION [ Read Interrupted by Read ] Burst read oparation can be interrupted by new read of the same or the other bank. Random column access is allowed READ to READ interval is minimum 1 CK Read Interrupted by Read (BL=4, CL=2)
CK Command A0-9,11 A10 BA0,1 DQ
READ Ya 0 00 Qa0 READ READ Yb 0 00 Qa1 Yc 0 10 Qa2 Qb0 Qc0 Qc1 Qc2 Qc3
[ Read Interrupted by Write ] Burs t read operation can be interrupted by write of any active bank. Random column access is allowed. In this case, the DQ should be controlled adequately by using the DQMB0-7 to prevent the bus contention. The output is disabled automatically 1 cycle after WRITE assertion. Read Interrupted by Write (BL=4, CL=2)
CK Command ACT A0-9,11 A10 BA0,1 DQMB0-7 DQ
Qa0 Da0 Da1 Da2 Da3 Xa Xa 00 READ Ya 0 00 Write Ya 0 00
Output disable by DQM
by WRITE
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 20 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
[ Read Interrupted by Precharge ] A burst read operation can be interrupted by precharge of the same bank . Read to PRE interval is minimum 1 CK. A PRE command output disable latency is equivalent to the /CAS Latency. Read Interrupted by Precharge (BL=4)
CK
Command DQ
READ
PRE Q0 Q1 Q2
CL=3
Command DQ Command DQ
READ PRE Q0 READ PRE Q0 Q1
Command DQ
READ Q0
PRE Q1 Q2
CL=2
Command DQ Command DQ
READ PRE Q0 READ PRE Q0 Q1
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 21 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
[ Read Interrupted by Burst Terminate ] Similarly to the precharge, burst terminate command can interrupt burst read operation and disable the data output. The term inated bank remains active,READ to TBST interval is minimum of 1 CK. A TBSTcommand to output disable latency is equivalent to the /CAS Latency. Read Interrupted by Terminate (BL=4)
CK
Command DQ Command
READ
TBST Q0 Q1 Q2
READ
TBST Q0 Q1
CL=3
DQ Command DQ
READ TBST
Q0
Command DQ Command
READ Q0
TBST Q1 Q2
READ
TBST Q0 Q1
CL=2
DQ
Command DQ
READ TBST Q0
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 22 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
[ Write Interrupted by Write ] Burs t write operation can be interrupted by new write of any active bank. Random column access is allowed. WRITE to WRITE interval is minimum 1 CK. Write Interrupted by Write (BL=4)
CK Command A0-9, 11 A10 BA0,1 DQ
Write Ya 0 00 Da0 Da1 Da2 Write Write Yb 0 00 Db0 Yc 0 10 Dc0 Dc1 Dc2 Dc3
[ Write Interrupted by Read ] Burs t write operation can be interrupted by read of any active bank. Random column access is allowed. WRITE to READ interval is minimum 1 CK. The input data on DQ at the interrupting READ cycle is "don't care". Write Interrupted by Read (BL=4, CL=2)
CK Command ACT A0-9,11 A10 BA0,1 DQ
Xa Xa 00 Write Ya 0 00 Da0 Da1 READ Yb 0 00 Qb0 Qb1 Qb2 Qb3
don't care
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 23 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
[ Write Interrupted by Precharge ] Burs t write operation can be interrupted by precharge of the same bank . Write recovery time(tWR) is required from the last data to PRE command. During write recovery, data inputs must be masked by DQM. Write Interrupted by Precharge (BL=4)
CK Command A0-9,11 A10 BA0,1 DQMB0-7 DQ
Da0 Da1 ACT Xa 0 00 Write Ya 0 00 0 00 PRE tRP Xa 0 00 ACT
tWR
[ Write Interrupted by Burst Terminate ] Burs t terminate command can term inate burst write operation. In this case, the write recovery time is not required and the bank remains active.The WRITE to TBST minimum interval is 1CK. Write Interrupted by Burst Terminate (BL=4)
CK Command A0-9,11 A10 BA0,1 DQ
ACT Xa 0 00 Write Ya 0 00 Da0 Da1 TBST Write Yb 0 00 Db0 Db1 Db2 Db3
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 24 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
[ Write with Auto-Precharge interrupted by Write or Read to anotehr Bank ] Burs t write with auto-precharge can be interrupted by write or read toanother bank . Next ACT command can be issued after (BL+tWR-1+tRP) from the WRITEA. Autoprecharge interrrupted by a command to the same bank is inhibited. WRITEA Interrupted by WRITE to another bank (BL=4)
CK Command A0-9,11 A10 BA0,1 DQ
Write Ya 1 00 Da0 Da1 Write BL Ya tWR 0 10 Db0 Db1 Db2 Db3 Xa 00 ACT tRP Xa
auto-precharge interrupted
activate
WRITEA interrupted by READ to another bank (CL=2,BL=4)
CK Command A0-9,11 A10 BA0,1 DQ
Write Ya 1 00 Da0 Da1 Read BL Yb tWR 0 10 Db0 Db1 Db2 Xa 00 Db3 tRP Xa ACT
auto-precharge interrupted
activate
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 25 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
[ Read with Auto-Precharge interrupted by Read to anotehr Bank ] Burs t read with auto-precharge can be interrupted by read toanother bank . Next ACT command can be issued after (BL+tRP) from the READA. Auto-precharge interrrupted by a command to the same bank is inhibited. READA Interrupted by READ to another bank (CL=2,BL=4)
CK Command A0-9,11 A10 BA0,1 DQ
Read Ya 1 00 Read BL Ya tWR 0 10 Qa0 Qa1 Qb0 Qb1 Xa 00 Qb2 Qb3 ACT tRP Xa
auto-precharge interrupted
activate
Full Page Burst Full page burst length is available for only the sequential burst type. Full page burst read or write is repeated untill aPrecharge or a Burst Terminate command is issued. In case of the full page burst , a read or write with auto-precharge command is illegal. Single Write When single write mode is set, burst length for write is always one, independently of Burst Length defined by (A2-0).
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 26 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
AUTO REFRESH Single cycle of auto-refresh is initiated with a REFA(/CS=/RAS=/CAS=L, /WE=/CKE=H) command. The refresh address is generated internally. 4096 REFA cycle within 64ms refresh 128Mbit memory cells. The auto-refresh is performed on 4banks concurrently. Before performing an auto-refresh, all banks must be in the idle state. Auto-refresh to auto-refresh interval is minimum tRFC. Any command must not be issued before tRFC from the REFA command.
Auto-Refresh
CK /S NOP or DESLECT /RAS /CAS /WE CKE A0-11 BA0,1
minimum tRFC
Auto Refresh on All Banks
Auto Refresh on All Banks
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 27 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
SELF REFRESH Self-refresh mode is entered by issuing a REFS command (/CS=/RAS=/CAS=L, /WE=H, CKE=L). Once the self-refresh is initiated, it is maintained as log as CKE is kept low.During the self-refresh mode, CKE is asynchronous and the only enabled input , all other inputs including CK are disabled and ignored, so that power consumption due to synchronous inputs is saved. To exit the self-refresh, supplying stable CK inputs, asserting DESEL or NOP command and then asserting CKE=H. After tRFC from the 1st CK edge follwing CKE=H, all banks are in the idle state and a new command can be issued after, but DESEL or NOP commands must be asserted till then. Self-Refresh
CK
Stable CK
/S /RAS /CAS /WE CKE
NOP
new command
A0-11 BA0,1
X
00
Self Refresh Entry
Self Refresh Exit
minimum tRFC for recovery
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 28/ 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
CLK SUSPEND and POWER DOWN CKE controls the internal CLK at the following cycle. Figure below shows how CKE works. By negating CKE, the next internal CLK is suspended. The purpose of CLK suspend is power down, output suspend or input suspend. CKE is a synchronous input except during the self-refresh mode. CLK suspend can be performed either when the banks are active or idle. A command at the suspended cycle is ignored.
CK (ext.CLK) tIH CKE tIS tIH tIS
int.CLK
Power Down by CKE
CK CKE Command
PRE NOP NOP NOP Standby Power Down
CKE Command
ACT NOP NOP NOP
Activ e Power Down
DQ Suspend by CKE
CK CKE Command
Write READ
DQ
D0
D1
D2
D3
Q0
Q1
Q2
Q3
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 29 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
DQM CONTROL DQMB0-7 is a dual function signal defined as the data mask for writes and the output disable for reads. During writes, DQMB0-7 masks input data word by word. DQMB0-7 to Data In latency is 0. During reads, DQMB0-7 forces output to Hi-Z word by word. DQMB0-7 to output Hi-Z latency is 2. DQM Function
CK Command DQMB0-7
Write READ
DQ
D0
D2
D3
Q0
Q1
Q3
masked by DQMB=H
disabled by DQMB=H
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 30 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
ABSOLUTE M AXIMUM RATINGS
Symbol Vdd VI VO IO Pd Topr Tstg Parameter Supply Voltage Input Voltage Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Ta=25C Condition with respect to Vss with respect to Vss with respect to Vss Ratings -0.5 ~ 4.6 -0.5 ~ Vdd+0.5 -0.5 ~ Vdd+0.5 50 18 0 ~ 70 -40 ~ 100 Unit V V V mA W C C
RECOM M ENDED OPERATING CONDITION
(Ta=0 ~ 70C, unless otherwise noted) Symbol Vdd Vss VIH VIL Parameter Min. Supply Voltage Supply Voltage High-Level Input Voltage all inputs Low-Level Input Voltage all inputs 3.0 0 2.0 -0.3 Limits Typ. 3.3 0 Max. 3.6 0 Vdd+0.3 0.8 Unit V V V V
Note) 1:VIH(max)=5.5V f or pulse width less than 10ns. 2.VIL(min)=-1.0 f or pulse width less than 10ns.
CAPACITANCE
(Ta=0 ~ 70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise noted) Symbol CI(A) Parameter Input Capacitance, address pin Test Condition Limits(max.) 105 Unit pF
CI(C) CI(K) CI/O
MIT-DS-0380-0.1
Input Capacitance, /RAS,/CAS,/WE
Input Capacitance, CK pin Input Capacitance, I/O pin
@1MHz 1.4V bias 200mV swing
105 48 22
pF pF pF
17.Mar.2000
MITSUBISHI ELECTRIC 31 / 55 ) (
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise noted)
Parameter
operating current one bank activ e (discrete)
Symbol
Test Condition -6 tRC=min.tCLK=min, BL=1,CL=3
Limits (max) -7, -8 1125 36 18 450 270 540 360 1350 2880 36
Unit mA mA mA mA mA mA mA mA mA mA
Icc1
1170 36 18 450 270 540 360 1620 2880 36
precharge stanby current in power-down mode precharge stanby current in non power-down mode active stanby current in non power-down mode
one bank activ e (discrete)
Icc2P CKE=L,tCLK=15ns, /CS>Vcc-0.2V Icc2PS CKE=CLK=L, /CS>Vcc-0.2V Icc2N CKE=H,tCLK=15ns,VIH>Vcc-0.2V,VIL<0.2V Icc2NS CKE=H,CLK=L,VIH>Vcc-0.2V,VIL<0.2V(f ixed) Icc3N CKE=H,tCLK=15ns Icc3NS CKE=H,CLK=L tCLK=min, BL=4, CL=3,all banks activ e(discerte) Icc4 tRC=min, tCLK=min Icc5 Icc6 CKE <0.2V
burst current auto-refresh current self-refresh current
Note) 1:Icc(max) is specif ied at the output open condition.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise noted)
Symbol VOH(DC) VOL(DC) IOZ VOH(AC) Ii VOL(AC) Limits Min. Max. Unit High-Level Output Voltage(DC) IOH=-2mA 2.4 V Low-Level Output Voltage(DC) IOL=2mA 0.4 V Q floating VO=0 ~ Vdd -20 20 uA Off-stare Output Current High-Level Output Voltage(AC) CL=50pF, IOH=2 V -180 180 uA Input Current 2mA ~ Vdd+0.3V VIH=0 Low-Level Output Voltage(AC) CL=50pF, IOL=2mA 0.8 V Parameter Test Condition
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 32 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
AC TIMING REQUIREMENTS (SDRAM Component)
(Ta=0 ~ 70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise noted) Input Pulse Levels: 0.8V to 2.0V Input Timing Measurement Level: 1.4V -6 Min. Max. CL=2 10 Limits -7 Min. Max. 10 10 3 3 1 2 1 70 20 50 20 20 20 20 10 10 -8 Min. 13 10 3 3 1 2 1 70 20 50 20 20 20 20 10 10 Max. ns ns ns ns 10 ns ns ns ns ns 100K ns ns ns ns ns ns ns 64 ms
Symbol Parameter
Unit
tCLK tCH tCL tT tIS tIH tRC tRCD tRAS tRP tWR tRRD tRSC tSRX tPDE tREF
7.5 CL=3 CK High pulse width 2.5 CK Low pilse width 2.5 Transition time of CK 1 Input Setup time(all inputs) 1.5 Input Hold time(all inputs) 0.8 Row cycle tim e 67.5 Row to Column Delay 20 Row Active time 45 Row Precharge tim e 20 Write Recovery time 15 15 Act to Act Deley time Mode Register Set Cycle time 15 Self Refresh Exit tim e 7.5 Power Down Exit time 7.5 Refresh Interval time
CK cycle time
10
10
100K
100K
64
64
CK
1.4V
Any AC timing is referenced to the input
Signal
1.4V
signal crossing through 1.4V.
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 33 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
SWITCHING CHARACTERISTICS (SDRAM Component)
(Ta=0 ~ 70C, Vdd = 3.3 0.3V, Vss = 0V, unless otherwise note3) Symbol Parameter Min. tAC Access time from CK CL=2 CL=3 tOH Output Hold tim e from CK CL=2 CL=3 tOLZ tOHZ Delay time, output low impedance from CK Delay time, output high impedance from CK 3 2.7 0 2.7 5.4 -6 Limits -8 -7 Max. Min. Max. Min. Max. 6 5.4 3 3 0 3 6 6 6 3 3 0 3 6 7 6
Unit ns ns ns ns ns ns
Note) 1 If clock rising time is longer than 1ns,(tT/2-0.5)ns should be added to parameter.
Output Load Condition
VOUT 50pF
CK
1.4V
DQ
1.4V
Output Timing Measurement Reference Point
CK
tOLZ
1.4V
DQ
tAC MIT-DS-0380-0.1 tOH
tOHZ
1.4V
MITSUBISHI ELECTRIC ( 34 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Burst Write (single bank) @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRAS tRP
/RAS
tRCD tRCD
/CAS /WE
tWR
CKE DQM A0-8 A10 A9,11 BA0,1 DQ
ACT#0
X Y X Y
X
X
X
X
0
0
0
0
0
D0
D0
D0
D0
D0
D0
D0
D0
WRITE#0
PRE#0
ACT#0
WRITE#0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 35 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Burst Write (multi bank) @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS /RAS
tRRD
tRRD
tRAS
tRP tRCD
tRCD
/CAS /WE
tWR tWR
CKE DQM A0-8 A10 A9,11
X X Y Y X X Y
X
X
X
X
X
X
X
X
BA0,1 DQ
0
1
0
1
0
0
1
2
0
D0
D0
D0
D0
D1
D1
D1
D1
D0
D0
D0
D0
ACT#0
WRITE#0 ACT#1
PRE#0 WRITE#1
ACT#0
ACT#2 WRITE#0 PRE#1
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 36 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Burst Read (single bank) @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRAS tRP
/RAS
tRCD tRCD
/CAS /WE CKE DQM
DQM read latency =2
A0-8 A10 A9,11
X
Y
X
Y
X
X
X
X
BA0,1 DQ
0
0
0
0
0
CL=3
Q0 Q0 Q0 Q0 Q0 Q0
ACT#0
READ#0
PRE#0
ACT#0
READ#0
READ to PRE BL allows full data out
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 37 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Burst Read (multiple bank) @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS /RAS
tRRD tRAS tRCD tRP
tRRD
tRCD
/CAS /WE CKE
DQM
DQM read latency =2
A0-8 A10 A9,11 BA0,1 DQ
X
X
Y
Y
X
X
Y
X
X
X
X
X
X
X
X
0
1
0
1
0
0
1
2
0
CL=3
Q0 Q0
CL=3
Q0 Q0 Q1 Q1 Q1 Q1 Q0
ACT#0
READ#0 ACT#1
PRE#0 READ#1
ACT#0 READ#0 PRE#1 ACT#2
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 38/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Burst Write (multi bank) with Auto-Precharge @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRRD tRRD
/RAS
tRCD tRCD BL-1+ tWR + tRP BL-1+ tWR + tRP tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11
X X Y Y X Y X Y
X
X
X
X
X
X
X
X
BA0,1 DQ
0
1
0
1
0
0
1
1
D0
D0
D0
D0
D1
D1
D1
D1
D0
D0
D0
D0
D1
ACT#0 ACT#1
WRITE#0 with AutoPrecharge
ACT#0 WRITE#1 with AutoPrecharge
WRITE#0 ACT#1
WRITE#1
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 39/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Burst Read (multiple bank) with Auto-Precharge @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
tRC
/CS
tRRD tRRD
/RAS
tRCD tRCD BL+tRP BL+tRP tRCD
/CAS /WE CKE DQM
DQM read latency =2
A0-8 A10 A9,11 BA0,1 DQ
X
X
Y
Y
X
Y
X
Y
X
X
X
X
X
X
X
X
0
1
0
1
0
0
1
1
CL=3
Q0 Q0
CL=3
Q0 Q0 Q1 Q1 Q1 Q1
CL=3
Q0 Q0
ACT#0 ACT#1
READ#0 with Auto-Precharge
ACT#0 READ#1 with Auto-Precharge
READ#0 ACT#1
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 40/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Page Mode Burst Write (multi bank) @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11 BA0,1 DQ
ACT#0
X X Y Y Y Y
X
X
X
X
0
1
0
0
1
0
D0
D0
D0
D0
D0
D0
D0
D0
D1
D1
D1
D1
D0
D0
D0
WRITE#0 ACT#1
WRITE#0 WRITE#1
WRITE#0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 41/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Page Mode Burst Read (multi bank) @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM
DQM read latency=2
A0-8 A10 A9,11 BA0,1 DQ
X
X
Y
Y
Y
Y
X
X
X
X
0
1
0
0
1
0
CL=3
Q0 Q0
CL=3
Q0 Q0 Q0 Q0
CL=3
Q0 Q0 Q1 Q1 Q1 Q1
ACT#0
READ#0 ACT#1
READ#0 READ#1
READ#0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 42 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Write Interrupted by Write / Read @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD tCCD
/CAS /WE CKE
DQM A0-8 A10 A9,11 BA0,1 DQ
X X Y Y Y Y Y
X
X
X
X
0
1
0
0
0
1
0
CL=3
D0 D0 D0 D0 D0 D0 D1 D1 Q0 Q0 Q0 Q0
ACT#0 WRITE#0 WRITE#0 WRITE#0 READ#0 ACT#1 WRITE#1 Burst Write can be interrupted by Write or Read of any active bank. Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 43 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Read Interrupted by Read / Write @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM
DQM read latency=2
A0-8 A10 A9,11 BA0,1 DQ
X
X
Y
Y
Y
Y
Y
Y
X
X
X
X
0
1
0
0
0
1
0
0
Q0
Q0
Q0
Q0
Q0
Q0
Q1
Q1
Q0
D0
D0
ACT#0
READ#0 READ#0 READ#0 READ#0 WRITE#0 ACT#1 READ#1 blank to prevent bus contention
Burst Read can be interrupted by Read or Write of any active bank. Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 44 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Write Interrupted by Precharge @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD
/RAS
tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11 BA0,1 DQ
X X Y Y X Y
X
X
X
X
X
X
0
1
0
1
0
1
1
1
D0
D0
D0
D0
D1
D1
D1
D1
D1
ACT#0 WRITE#0 ACT#1
PRE#0 WRITE#1 PRE#1
ACT#1
WRITE#1
Burst Write is not interrupted by Precharge of the other bank.
Burst Write is interrupted by Precharge of the same bank. Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 45 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Read Interrupted by Precharge @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRRD tRP
/RAS
tRCD tRCD
/CAS /WE CKE DQM
DQM read latency=2
A0-8 A10 A9,11 BA0,1 DQ
X
X
Y
Y
X
Y
X
X
X
X
X
X
0
1
0
1
0
1
1
1
Q0
Q0
Q0
Q0
Q1
Q1
ACT#0
READ#0 ACT#1
PRE#0 READ#1 PRE#1
ACT#1
READ#1
Burst Read is not interrupted by Precharge of the other bank.
Burst Read is interrupted by Precharge of the same bank. Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 46 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Mode Register Setting
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRC
tRSC
/RAS
tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11 BA0,1 DQ
Auto-Ref (last of 8 cycles) Mode Register Setting ACT#0
0 M X Y
X
X
0
0
D0
D0
D0
D0
WRITE#0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 47 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Auto-Refresh @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS
tRC
/RAS
tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11 BA0,1 DQ
Auto-Refresh Before Auto-Refresh, all banks must be idle state. ACT#0
X Y
X
X
0
0
D0
D0
D0
D0
WRITE#0
After tRC from Auto-Refresh, all banks are idle state. Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 48/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Self-Refresh
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK
CLK can be stopped tRC
/CS /RAS /CAS /WE
tSRX
CKE
CKE must be low to maintain Self-Refresh
DQM A0-8 A10 A9,11 BA0,1 DQ
Self-Refresh Entry Before Self-Refresh Entry, all banks must be idle state. Self-Refresh Exit ACT#0
X
X
X
0
After tRC from Self-Refresh Exit, all banks are idle state. Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 49 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
DQM Write Mask @BL=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS
tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11 BA0,1 DQ
ACT#0
X Y Y Y
X
X
0
0
0
0
masked
D0 D0 D0 D0 D0 D0 D0
masked
WRITE#0
WRITE#0
WRITE#0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 50 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
DQM Read Mask @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS
tRCD
/CAS /WE CKE DQM A0-8 A10 A9,11 BA0,1 DQ
ACT#0 READ#0
X Y Y Y
DQM read latency=2
X
X
0
0
0
0
masked
Q0 Q0 Q0 Q0
masked
Q0 Q0 Q0
READ#0
READ#0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 51 / 55 ) (
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Power Down
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS /CAS /WE
Standby Power Down Active Power Down
CKE
CKE latency=1
DQM A0-8 A10 A9,11 BA0,1 DQ
Precharge All ACT#0
X
X
X
0
Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 52/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
CLK Suspend @BL=4 CL=3
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
CLK /CS /RAS
tRCD
/CAS /WE CKE
CKE latency=1 CKE latency=1
DQM A0-8 A10 A9,11 BA0,1 DQ
ACT#0
X Y Y
X
X
0
0
0
D0
D0
D0
D0
Q0
Q0
Q0
Q0
WRITE#0 READ#0 CLK suspended
CLK suspended Italic parameter indicates minimum case
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 53 / 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
OUTLINE
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC ( 54/ 55 )
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1.These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. 2.Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3.All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). 4.When using any or all of the information contained in these materials, including product data, diagrams, charts, programs and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5.Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6.The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. 7.If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8.Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.
MIT-DS-0380-0.1
MITSUBISHI ELECTRIC 55 / 55 ) (
17.Mar.2000

▲Up To Search▲

Price & Availability of MH32S72APHB-8

	To Download MH32S72APHB-8 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .