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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MHVIC2114R2/D
The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifier
The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact. Final Application * Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band Power Gain -- 32 dB IMD -- - 30 dBc Driver Application * Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 32 dB ACPR -- - 58 dBc * P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz * Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * Integrated ESD Protection * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MHVIC2114R2
2100 MHz, 27 V, 23 dBm SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
Freescale Semiconductor, Inc...
CASE 978 - 03 PFP - 16
PIN CONNECTIONS
VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation
N.C. VGS3 VGS2 VDS3/RFout VGS1 RFin RFin VDS1 VDS2
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C.
RFin IC
VDS1 VDS2
3 Stages IC
(Top View) NOTE: Exposed backside flag is source terminal for transistors.
Rev. 1
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MHVIC2114R2 1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = +0.2 W CW) Stage 1, 27 Vdc, IDQ1 = 96 mA Stage 2, 27 Vdc, IDQ2 = 204 mA Stage 3, 27 Vdc, IDQ3 = 111 mA Symbol RJC 11.5 7.52 5.52 Value 65 - 0.5, +15 - 65 to +150 150 5 Unit Vdc Vdc C C dBm
THERMAL CHARACTERISTICS
Value (1) Unit C/W
Freescale Semiconductor, Inc...
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M1 (Minimum) C2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22 - A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gain Flatness Input Return Loss Adjacent Channel Power Ratio Group Delay Phase Linearity Gps GF IRL ACPR Delay -- 29 -- -- -- -- -- 32 0.3 - 13 - 60 1.7 0.2 36 0.5 - 10 - 57 -- -- dB dB dB dBc ns
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955.
MHVIC2114R2 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
1 VGS3 R3 VGS2 R2 VGS1 R1 RF INPUT 16 VDS3
+
C1 C2
2
15 C17 C18
+
C19
+
C20
+
C5 C3
3
14
Z4
4 13 C15 RF OUTPUT
+
C14 C4 5 12
Z2
C9 6 11 C16
Z5
Z3
Z1
C22
VDS1
+
+
C8 C7 C6
7
Quiescent Current Temperature Compensation
10
Freescale Semiconductor, Inc...
C21 VDS2
+
C13
+
C12 C11 C10
8
9
Z1 Z2 Z3 Z4 Z5 PCB
0.323 x .055 50 Microstrip 0.196 x .176 Microstrip 0.286 x .055 Microstrip 0.150 x .018 Microstrip 0.363 x .055 Microstrip Arlon, 0.021, r = 2.55
Figure 1. MHVIC2114R2 Test Circuit Schematic Table 1. MHVIC2114R2 Test Circuit Component Designations and Values
Part C1, C5, C8, C12, C14, C19 C2, C3, C4, C7, C11, C18 C6, C10, C17 C9 C15, C16 C22 C13, C20, C21 R1, R2, R3 Description 1 F Tantalum Chip Capacitors 0.01 F Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 F Electrolytic Capacitors 1 kW Chip Resistors (0805) Part Number TAJA105K035R 0805C103K5RACTR AVX08051J6R8BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J1R0BBT MCR35V337M10X16 P1.00KCCT - ND Manufacturer Kemet Vishay AVX AVX AVX AVX Multicomp Panasonic
MOTOROLA RF DEVICE DATA
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MHVIC2114R2 3
Freescale Semiconductor, Inc.
VGS1
R1 C14
VGS2
R2
R3
VGS3
C5 C3 C4
C2
C1
C15 C9 C16 C22
Freescale Semiconductor, Inc...
C6 C10 C17 C11 C12 C7 C8 VDD1 VDD2
MHVIC2114R2
Rev 1
C18 C19
VDD3
C21
C13
C20
Figure 2. MHVIC2114R2 Test Circuit Component Layout
MHVIC2114R2 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
40 30 20 S21 (dB) 10 0 -10 -20 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA f, FEQUENCY (MHz) S11 S21 0 -5 -10 DELAY, (nSEC) -15 -20 -25 -30 S11 (dB) 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 2100 -30 -35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -30_C VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 2170 2180 25_C TC = 85_C
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. Broadband Frequency Response
Figure 4. Delay versus Frequency
40 IRL, INPUT RETURN LOSS (dB)
-18 -17 -16 -15 25_C -14 -13 -12 -11 2160 2170 2180 -30_C TC = 85_C VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
G ps , POWER GAIN (dB)
36 TC = -30_C 32 25_C
28 85_C 24 VDD = 27 Vdc, Pout = 23 dBm CW 20 2100 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150
-10 2100
2110
2120
2130
2140
2150
2160
2170
2180
f, FREQUENCY (MHz)
f, FREQUENCY, (MHz)
Figure 5. Power Gain versus Frequency
Figure 6. Input Return Loss versus Frequency
40 38 36 G ps , POWER GAIN (dB) 34 32 30 28 26 24 22 20 15 VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 17.5 20 22.5 25 27.5 30 32.5 35 37.5 40 85_C S21 PHASE(_) 25_C TC = -30_C
-10
-20 TC = -30_C -30 25_C 40
-50 VDD = 27 Vdc, f = 2140 MHz -60 15 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 20 25 30 35
85_C
40
45
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 7. Power Gain versus Output Power
Figure 8. S21 Phase versus Output Power
MOTOROLA RF DEVICE DATA
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MHVIC2114R2 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 2110 MHz -50 2170 MHz -55 -60 2140 MHz VDD = 27 Vdc 3GPP Test Model 1 64 DPCH -20 -30 -40 -50 -60 -70 -80 -90 2000 5th Order 3rd Order VDD = 27 Vdc Pout = 23 dBm Two-Tone Avg. Tone Spacing = 100 kHz
IDQ3 = 100 mA 111 mA 122 mA 122 mA 100 mA 111 mA
-65 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Pout, OUTPUT POWER (dBm)
2050
2100
2150
2200
2250
2300
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 9. W - CDMA ACPR versus Output Power
Figure 10. Two - Tone Intermodulation Distortion Products versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 7th Order -60 -70 -80 0 VDD = 27 Vdc, f = 2140 MHz Pout = 7.5 W, Two-Tone Avg. IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 10 20 30 40 50 60 70 80 90 100 110 5th Order 3rd Order VBIAS, FIXTURE BIAS VOLTAGE (V)
7 6.75 6.5 6.25 6 5.75 5.5 5.25 5 4.75 4.5 4.25 4 3.75 3.5 3.25 3 -40
VBIAS1 VBIAS2 VDD = 27 Vdc, f = 2140 MHz R1 = R2 = R3 = 1000 Ohms
VBIAS3
-20
0
20
40
60
80
100
TONE SPACING (MHz)
T, TEMPERATURE (C)
Figure 11. Two - Tone Intermodulation Distortion Products versus Tone Spacing
Figure 12. Fixture Bias versus Temperature
4.5 4.4 VGS, IC GATE BIAS VOLTAGE (V) 4.3 4.2 4.1 4 3.9 VGS3 3.8 3.7 3.6 IGS3 3.5 -40 -30 -20 -10 0 10 20 30 40 VDD = 27 Vdc, f = 2140 MHz R1 = R2 = R3 = 1000 Ohms IGS1 & IGS2
2 1.8 IGS, GATE BIAS CURRENT (A) 1.6 1.4 1.2 VGS1 & VGS2 1 0.8 0.6 0.4 0.2 0 50 60 70 80 90 100 T, TEMPERATURE (C)
Figure 13. Gate Bias versus Temperature
MHVIC2114R2 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
f = 2170 MHz Zload f = 2110 MHz
f = 2110 MHz Zin f = 2170 MHz
Zo = 50
Freescale Semiconductor, Inc...
VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm f MHz 2110 2140 2170 Zin Zin 57.9 - j12.1 50.6 - j18.9 42.3 - j21.1 Zload 1.1 + j2.7 1.1 + j3.4 1.2 + j3.7
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
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MHVIC2114R2 7
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
h X 45 _ A E2
1 14 x e 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb
M
Freescale Semiconductor, Inc...
Y A A2
DATUM PLANE SEATING PLANE
c
H
aaa
C
SECT W - W
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978 - 03 ISSUE B PFP- 16
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MHVIC2114R2 8
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CC EE CC CC
b
M
b1
c1
CA
S
DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc
MHVIC2114R2/D MOTOROLA RF DEVICE DATA

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