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MITSUBISHI LASER DIODES
ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE NAME
ML1016R, ML120G6
FEATURES
* High Power: 30mW (CW), 50mW (pulse) * Visible Light: 658nm (typ)
DESCRIPTION
ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation.
APPLICATION
DVD(Digital Versatile Disc)-RAM/RW Drive
Conditions CW Ratings 35 50 2 30 10 -10 ~ +60 -40 ~ +100 mW V V mA C C Unit
ABSOLUTE MAXIMUM RATINGS
Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power
Note 1)
Pulse(Note 2) -
Reverse voltage (laser diode) Reverse voltage (Photodiode) Forward current (Photodiode) Case temperature Storage temperature
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department. Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1s
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C)
Symbol Ith Iop Vop p Parameter Threshold current Operating current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output current (Photodiode) (only for ML1016R) Dark current (Photodiode) Capacitance (Photodiode) CW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW CW,Po=30mW,VRD=1V RL=10(Note 3) VRD=10V f=1MHz,VRD=5V Test conditions Min. 655 7 17 0.05 Typ. 40 80 2.7 0.7 658 8.5 22 0.35 7 Max 70 120 3.0 666 11 26 2.5 0.5 Unit mA mA V mW/mA nm mA
//
Im ID Ct
mA
pF
Note 3:RL=the load resistance of photodiode for ML1016R
MITSUBISHI ELECTRIC (1/4)
as of December '99
MITSUBISHI LASER DIODES
ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
OUTLINE DRAWINGS
ML1016R ML120G6
PD
CASE
LD
ML1016R
CASE LD
ML120G6
Typical Characteristics
50 Light Output Power, Po (mW) 40 30 20 10 CW 0 0 50 100 150 200 Operating Current , Iop(mA) Light Output Power, Po (mW) 50 40 30
Reference data Tc=25 40 50 60 70C
Tc=25C
60C
20 10 0 Pulse Duty: 50% Width: 1ms 0 50 100 150 200 Operating Current , Iop(mA)
Light Output Power vs. Current (CW)
Light Output Power vs. Current (Pulse)
as of December '99
MITSUBISHI ELECTRIC (2/4)
MITSUBISHI LASER DIODES
ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
Typical Characteristics
100 Threshold Current, Ith (mA) CW 50 Monitor Current, Im (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 70 Tc=25C CW
10
0
10
20
30
40
50
60
0
Case Temperature, Tc (C)
10 20 30 40 50 Light Output Power, Po (mW)
Threshold Current vs. Temperature
Monitor Photodiode Current
100 Astigmatic Distance, AS (mm) Tc=25C Po=30mW Relative Intensity (%) //=9 50 =22
10 Tc=25C, CW NA=0.7 PMMA Lens
5
0 -60
-40
-20 0 20 Angle (deg.)
40
60
0
0
10 20 30 40 50 Light Output Power, Po (mW)
Far-Field-Patterns
Astigmatic Distance
as of December '99 MITSUBISHI ELECTRIC (3/4)
MITSUBISHI LASER DIODES
ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
Typical Characteristics
668 Peak Wavelength, p (nm) Peak Wavelength, p (nm) 666 664 662 660 658 656 654 0 10 20 30 40 50 60 70 ~0.17nm/C Po=30mW CW 661 660 659 658 657 656 Case Temperature, Tc (C) Tc=25C CW ~0.05nm/mW
0
10 20 30 40 50 Light Output Power, Po (mW)
Peak Wavelength vs. Temperature
Peak Wavelength vs. Light Output Power
1600 1400 Polarization Ratio, P/P// 1200 1000 800 600 400 200 0 0 10 20 30 40 50 Light Output Power, Po (mW) 25C NA=0.5 TE Mode
Polarization Ratio
as of December '99 MITSUBISHI ELECTRIC (4/4)

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