View MP4T324335_1282412.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Bipolar High fT Low Voltage NPN Silicon Transistors
Features
* Designed for 3-5 Volt Operation * Useable to 6 GHz in Oscillators * Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz * Useful for Class C Amplifiers * Available as Chips and in Hermetic and Surface Mount Packages * Can be Screened to JANTX, JANTXV Equivalent Levels (ceramic pacakges) * Tape and Reel Packaging Available for packaged devices.
MP4T3243 Series
V4.00
Case Style
SOT-23
Description
The MP4T3243 series of high fT low voltage NPN medium power silicon bipolar transistors is designed for usage in battery operated systems with 3-5 volt collector bias. They are useful as low phase noise oscillator transistors through 6 GHz and as moderate power driver amplifiers through 3 GHz. These transistors are available as chips for hybrid oscillators or in ceramic packages for military or commercial usage. Both the chips and hermetic packages can be screened to JANTX equivalent levels. These transistors use high temperature gold, platinum, titanium metalization with silicon dioxide and silicon nitride passivation. The chip is emitter ballasted with polysilicon resistors to prevent current concentration at high current operation.
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors Maximum Ratings
MP4T324300 Parameter Collector-Base Voltage Emitter-Base Voltage1 Collector Current1 Junction Temperature Storage Temperature Power Dissipation
1. 2. 3.
1,3 2 1 1
MP4T3243 Series
V4.00
MP4T324333 SOT-23 8 6 1.5 110 125 -65 to +125 C 250 125
MP4T324335 Micro-X 8 6 1.5 110 200 -65 to +175 C 400 150
Symbol VCBO VCE VEB IC Tj TSTG PT TCP
Unit Volts Volts Volts mA C C mW C
Chip 8 6 1.5 110 200 -65 to +175 C 600 150
Collector-Emitter Voltage
Operating Temperature
At 25 case temperature (packaged transistors) or 25 mounting surface temperature (chip transistors). C C Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature. The thermal resistance of the MP4T324300 junction/case is 50 C/watt nominal.
Electrical Specifications @ +25 C
MP4T324300 Parameter Gain Bandwidth Product Insertion Power Gain Condition VCE = 3 volts I C = 50 mA VCE = 3 volts I C = 40 mA f = 1 GHz f = 2 GHz Noise Figure VCE = 3 volts I C = 10 mA f = 1 GHz Unilateral Gain VCE = 3 volts I C = 40 mA f = 1 GHz f = 2 GHz Maximum Available Gain VCE = 3 volts I C = 40 mA f = 2 GHz Power Out at 1 dB Compression VCE = 3 volts I C = 50 mA f = 2 GHz f = 3 GHz 20 typ 15 typ 19 typ 15 typ 20 typ 15 typ P1dB dBm 8.5 typ 7 typ 8.5 typ MAG dB 10 typ 6 typ 9 typ 4 typ 10 typ 6 typ GTU (max) dB 2.2 max 2.4 max 2.2 max NF dB 7 min 3 typ 6 min 2.5 typ 7 min 3 typ |S21E|2 dB Symbol fT Units GHz Chip 6 typ MP4T324333 SOT-23 6 typ MP4T324335 Micro-X 6 typ
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors Electrical Specifications @ +25 C
MP4T3243 Series
Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector Base Junction Capacitance Condition VCB = 4 volts I E = 0 A VEB = 1 volt I C = 0 A VCE = 3 volts I C = 20 mA VCB = 3 volts I E = 0 A f = 1 MHz COB 0.8 hFE 20 125 I EBO Symbol I CBO Min Typical
MP4T3243 Series
V4.00
Max 10 1 250 1.0
Units A A pF
Typical Scattering Parameters in the MIcro-X Package
MP4T324335 VCE = 3 Volts, IC = 10 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 Mag. 0.647 0.666 0.694 0.714 0.748 0.772 S11E Angle 172 149 128 109 90 70 Mag. 2.480 1.408 1.135 1.005 0.948 0.930 S21E Angle 73.2 51.2 34.1 17.3 4.0 -9.1 Mag. 0.137 0.225 0.336 0.427 0.507 0.605 S12E Angle 51.4 49.0 43.8 32.1 22.8 11.8 Mag 0.311 0.365 0.366 0.412 0.453 0.499 S22E Angle -165.8 172.5 156.0 142.1 127.2 111.9
MP4T324335 VCE = 3 Volts, IC = 20 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 Mag. 0.661 0.677 0.697 0.715 0.744 0.762 S11E Angle 168 146 125 107 89 69 Mag. 2.632 1.493 1.210 1.067 1.007 0.990 S21E Angle 73.3 53.1 36.5 19.3 5.4 -8.5 Mag. 0.137 0.238 0.359 0.451 0.525 0.619 S12E Angle 60.8 53.0 44.8 31.0 20.7 9.1 Mag 0.373 0.421 0.415 0.450 0.480 0.510 S22E Angle 178.5 161.3 144.6 130.3 115.5 101.6
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors Typical Scattering Parameters in the Micro-X Package (Cont' d)
MP4T324335 VCE = 3 Volts, IC = 40 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 Mag. 0.675 0.692 0.707 0.719 0.749 0.763 S11E Angle 164 143 121 104 86 66 Mag. 2.678 1.528 1.230 1.095 1.035 1.017 S21E Angle 73.3 54.1 37.7 20.8 6.5 -7.8 Mag. 0.139 0.244 0.368 0.463 0.537 0.629 S12E Angle 66.2 55.0 45.9 31.5 20.4 8.4
MP4T3243 Series
V4.00
S22E Mag 0.424 0.470 0.455 0.481 0.504 0.523 Angle 176.6 158.6 141.6 128.1 113.3 99.2
MP4T324335 VCE = 3 Volts, IC = 60 mA
Frequency (MHz) 1000 2000 3000 4000 5000 6000 Mag. 0.685 0.698 0.719 0.727 0.754 0.767 S11E Angle 164 143 122 104 86 67 Mag. 2.678 1.528 1.245 1.103 1.045 1.025 S21E Angle 73.1 54.2 37.7 20.7 6.5 -7.9 Mag. 0.140 0.251 0.380 0.474 0.549 0.641 S12E Angle 68.1 56.1 45.6 31.0 19.8 7.4 Mag 0.446 0.492 0.480 0.502 0.520 0.540 S22E Angle 173.9 156.8 139.4 125.4 110.6 96.0
Typical Performance Curves
DC SAFE OPERATING RANGE at 25 c
TOTAL POWER DISSIPATION (mW)
NOMINAL POWER DERATING CURVES
1000 900 800 700 600 500 400 300 200 100 0 -25
200 COLLECTOR CURRENT (mA) 110 100 80 50
MP4T324300 CHIP ON 25 HEAT SINK C
MP4T324300 CHIP ON 25 HEAT SINK C MP4T324335 MICRO-X
MP4T324335 MICRO-X
20
MP4T324333 SOT-23
10 0 2 4 COLLECTOR EMITTER VOLTAGE (Volts) 6
MP4T324333 SOT-23
0 25 50 75 100 125 150 175 200
AMBIENT TEMP (C)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors Typical Performance Curves (Cont' d)
NOMINAL COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTORBASE VOLTAGE (MP4T324335)
COLLECTOR-BASE CAPACITANCE (pF) 1 0.9 0.8 0.7 0.6 2 0 1 1 COLLECTOR-BASE VOLTAGE (Volts) 10 0.5 0.4 GAIN (dB)
MP4T3243 Series
V4.00
NOMINAL GAIN vs FREQUENCY at VCE = 3 VOLTS AND IC = 20 mA (MP4T324335)
12 10 8 6 4
GTU (MAX)
|S21E |2
10 FREQUENCY (GHz)
NOMINAL GAIN vs COLLECTOR CURRENT at f=1 GHz and VCE = 3 VOLTS (MP4T324335)
13 12 11 GAIN (dB) 10 9 8 7 6 5 4 1 10 COLLECTOR CURRENT (mA) 100 |S21E|2
GTU (MAX) MAG
NOMINAL GAIN vs COLLECTOR CURRENT AT f=2 GHz and VCE = 3 VOLTS (MP4T324335)
10 9 8 7 GAIN (dB) 6 5 4 3 2 1 0 1 10 COLLECTOR CURRENT (mA) 100 |S21E |2
GTU (MAX) MAG
NOMINAL GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE = 3 and 5 VOLTS (MP4T324335)
GAIN BANDWIDTH PRODUCT (GHz) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1 10 COLLECTOR CURRENT (mA) 100 3 VOLTS 5 VOLTS DC CURRENT GAIN
NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 VOLTS (MP4T324335)
120 110 100 90 80 70 60 50 0 20 40 60 80 100 COLLECTOR CURRENT (mA)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors Typical Performance Curves (Cont' d)
NOMINAL NOISE FIGURE and ASSOCIATED GAIN at 1 GHz at VCE = 3 VOLTS vs COLLECTOR CURRENT in mA (MP4T324335)
10 ASSOCIATD GAIN (dB) 40 35 8 ASSOCIATED GAIN 6 P1dB (dBm) 30 25 20 15 10 NOISE FIGURE 0 1 10 COLLECTOR CURRENT (mA) 100 5 0 0 5 10 15 20 25 30 35 2 GHz
MP4T3243 Series
V4.00
NOMINAL OUTPUT POWER at the 1 dB COMPRESSION POINT vs COLLECTOR CURRENT at f = 2 and 3 GHz and VCE = 3 VOLTS (MP4T324335)
NOISE FIGURE(dB)
4
3 GHz
2
40
45
50
55
60
65
70
COLLECTOR CURRENT (mA)
Case Styles
MP4T324300 (Chip) MP4T324300
A Base
NOMINAL DIM. A B C D (Dia.) E (Chip Thickness)
INCHES 0.013 0.013 0.005 0.002 0.0045
MILLIMETERS 0.330 0.330 0.127 0.050 0.114
B
C
D
Emitter
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
6
Tel (408) 432-1480
Fax (408)) 432-3440
Bipolar High fT Low Voltage NPN Silicon Transistors Case Styles (Cont' d)
MP4T324333 MP4T324333 (SOT-23)
DIM. A
F D A N
MP4T3243 Series
V4.00
INCHES MIN. 0.013 0.003 0.110 0.047 MAX. 0.044 0.004 0.040 0.020 0.006 0.119 0.056
MILLIMETERS MIN. 0.33 0.08 2.80 1.20 MAX. 1.12 0.10 1.00 0.50 0.15 3.00 1.40
B C D
M G B K
E F G H J K L DIM. M N
L H J C E
0.037 typical 0.075 typical 0.103 0.024
0.95 typical 1.90 typical 2.60 0.60
GRADIENT 10max.
1
Note: 1. Applicable on all sides.
2. . . 30
MP4T324335 (Micro-X)
Emitter F 4 PLCS. E H
MP4T324335
INCHES DIM. A B C D E MIN. 0.092 0.079 0.019 0.018 0.150 0.003 45 MAX. 0.108 0.087 0.070 0.025 0.022 0.006 MILLIMETERS MIN. 2.34 2.01 0.48 0.46 3.81 0.08 45 MAX. 2.74 2.21 1.78 0.64 0.56 0.15
Collector B
Base
Emitter
F G H
A C
G
D
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
7
Tel (408) 432-1480
Fax (408)) 432-3440

▲Up To Search▲

Price & Availability of MP4T324335

	To Download MP4T324335 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .