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3 Volt, Low Noise High fT Silicon Transistor
Features
* * * * * High Performance at VCE = 3V Low Noise Figure at Small Currents (0.3-2 mA) High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel
MP4T6310 Series
SOT-23
Description
The MP4T6310 series of low current, high fT silicon NPN bipolar transistors provides low noise figure at a bias of 3 volts and small collector current. These inexpensive surface mount NPN transistors are well suited for usage in protable battery operated wireless systems from 500 MHz through 2.5 GHz where low noise figure at small current is important. The MP4T6310 transistors series has high fT and low noise when operated with 0.3 to 2.0 milliamperes current, and 3 volt bias. The associated gain is approximately 14 dB at 1 GHz with 1 mA collector current. The MP4T6310 also has low phase noise while operating in a low power 3-5 volt battery operated VCO in the frequency range of 0.5 to 3 GHz. The MP4T6310 transistor is designed for wireless communication systems from VHF through L-band where good noise figure and high gain at 3 volt bias and low DC current are key system requirements. Suggested uses include, 900 MHz portable phones, pagers, PCN subscriber phones and 2.4 GHz cordless and cellular hand held receivers. The MP4T6310 family of transistors is available in chip (MP4T631000), SOT-23 (MP4T631033), SOT-143 (MP4T631039), and in Micro-X (MP4T631035) packages. Surface mount packages are available on tape and reel.
SOT-143
Chip
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor Electrical Specifications at 25C
Symbol fT |S21E|
2
MP4T6310 Series
Parameters Gain Bandwidth Product Insertion Power Gain Noise Figure
NF
GTU (max)
Unilateral Gain
MAG P1dB RTH (J-A)
Maximum Available Gain Power Out at 1dB Compression Thermal Resistance
Test Conditions VCE = 3V IC = 6 mA VCE = 3V IC = 4 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 0.5 mA IC = 1 mA f = 1 GHz VCE = 3V IC = 4 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 4 mA f = 2 GHz VCE = 3V IC = 8 mA f = 1 GHz Junction/ Ambient
Units GHz dB
MP4T631000 Chip 14 typ.
MP4T631033 SOT-23 12 typ.
MP4T631035 Micro-X 14 typ.
MP4T631039 SOT-143 12 typ.
12 typ. 8 typ. dB 1.5 typ. dB 14.5 typ. 9 typ. dB 10 typ. dBm C/W 1.5 typ. 1 75 max
11 typ. 7 typ. 1.5 typ.
12 typ. 8 typ. 1.5 typ.
11 typ. 7 typ. 1.5 typ.
13 typ. 8 typ. 10 typ. 1.5 typ. 700 typ.2
14.5 typ. 9 typ. 10 typ. 1.5 typ. 600 typ.2
13 typ. 8 typ. 10 typ. 1.5 typ. 700 typ.2
1. Junction/Heat Sink R TH (J-C) 2. Free Air
Maximum Ratings at 25C
Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissiapation
1. See Typical Performance Curves for power derating.
Symbol VCBO VCEO VEBO IC Tj TSTG PD
Maximum Rating 8V 6V 1.5 V 10 mA 200C -65C to +200C -65C to +125C -60mW1
Electrical Specifications at 25C
Parameters Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector Base Junction Capacitance Conditions VCB = 3 V IE = 0 VEB = 1 V IC = 0 VCE = 3 V IC = 3 mA VCB = 3 V IE = 0 f = 1 MHz Symbol ICBO IEBO hFE COB Min. 20 Typ. 100 0.42 Max. 100 1 200 0.55 Units nA A pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor MP4T631035
Typical Scattering Parameters in the MIcro-X Package VCE = 3 Volts, IC = 2 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.744 0.524 0.357 0.255 0.188 0.139 0.130 0.133 0.156 0.180 0.204 0.228 Angle -37.9 -69.7 -94.3 -118.6 -142.6 -171.1 168.9 140.6 122.4 105.0 89.7 78.9 Mag. 4.174 3.435 2.771 2.308 1.977 1.709 1.587 1.448 1.369 1.296 1.239 1.194 S21E Angle 137.0 109.7 89.9 75.0 62.3 51.5 41.9 33.1 23.1 15.5 7.9 0.7 Mag. 0.088 0.136 0.169 0.201 0.228 0.254 0.281 0.299 0.323 0.342 0.362 0.379 S12E Angle 63.8 51.4 45.5 41.2 37.3 33.8 29.1 25.8 21.8 17.9 14.3 10.7
MP4T6310 Series
S22E Mag 0.841 0.645 0.531 0.463 0.415 0.393 0.360 0.342 0.324 0.308 0.299 0.292 Angle -31.2 -48.2 -57.9 -67.5 -75.2 -81.9 91.2 -97.9 -107.8 -115.4 -123.5 -132.8
VCE = 3 Volts, IC = 4 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.558 0.324 0.217 0.169 0.147 0.141 0.145 0.167 0.196 0.223 0.251 0.275 Angle -54.5 -92.2 -119.0 -150.7 172.8 148.6 134.2 115.0 103.5 90.9 79.0 69.7 Mag. 6.582 4.537 3.299 2.635 2.204 1.888 1.719 1.562 1.465 1.381 1.314 1.260 S21E Angle 127.1 98.8 82.1 69.2 58.0 48.1 39.3 30.9 21.3 13.9 6.4 -1.4 Mag. 0.074 0.114 0.149 0.184 0.215 0.244 0.274 0.296 0.322 0.343 0.365 0.383 S12E Angle 61.9 54.8 51.4 47.4 43.3 39.4 34.5 30.7 26.2 22.0 17.8 14.1 S22E Mag 0.727 0.523 0.437 0.387 0.353 0.330 0.315 0.305 0.288 0.275 0.267 0.262 Angle -37.0 -49.9 -56.5 -65.3 -72.2 -78.6 -88.4 -95.7 -106.1 -114.0 -122.7 -132.5
VCE = 3 Volts, IC = 6 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.429 0.244 0.178 0.160 0.158 0.166 0.170 0.192 0.221 0.250 0.280 0.304 Angle -67.5 -107.3 -136.4 -168.7 163.5 138.7 126.8 109.9 100.9 89.2 77.8 68.6 Mag. 7.855 4.871 3.445 2.722 2.264 1.933 1.753 1.584 1.490 1.403 1.333 1.276 S21E Angle 120.2 93.9 78.8 66.7 56.0 46.4 37.9 29.8 20.2 13.0 5.3 -2.4 Mag. 0.067 0.107 0.144 0.179 0.212 0.241 0.273 0.294 0.322 0.344 0.367 0.385 S12E Angle 62.5 57.9 54.7 50.3 45.9 41.5 36.5 32.8 28.1 23.8 19.4 15.7 S22E Mag 0.656 0.466 0.397 0.354 0.326 0.306 0.295 0.289 0.275 0.263 0.255 0.254 Angle -39.5 -49.4 -54.9 -63.5 -70.3 -76.9 -87.3 -94.3 -106.0 -114.7 -124.2 -134.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor Typical Performance Curves (MP4T631035)
MP4T6310 Series
POWER DERATING CURVES
80 70 POWER DISSIPATION (mW) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 A M B I E N T T E M P E R A T U R E (C ) M P4T631033, 39 (S O T -2 3 , 1 4 3 ) F R E E A I R M P 4 T 6 3 1 0 3 5 (M IC R O -X ) M P4T 63100 0 (C H IP ) O N IN FIN IT E H E A T SIN K
NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
16 14
NOISE FIGURE (dB) ASSOCIATED GAIN (dB)
12 10 8 6 4 2 0 0.1 1
ASSOC IATE D GAIN
N O ISE FIGU R E
10
C O LLE C TO R C U R R E N T (mA )
GAIN vs FREQUENCY at VCE=3 V and IC = 4 mA
16
COLL.-BASE CAPACITANCE (pF)
COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE
0.6 0.5 0.4 0.3 0.2 0.1 0
14 12 GAIN (dB) 10 8 6 4 2 1 F R E Q U E N C Y (G H z) 10 |S 2 1E |2 GT U (M AX )
1 C O LL EC T OR -B ASE VO LTA GE (Vo lts)
10
GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE=3 V
15 GAIN BANDWIDTH (GHz) 14 13 12 11 10 9 8 1 C O L L E C T O R C U R R E N T (m A) 10 GAIN (dB)
GAIN vs COLLECTOR CURRENT at 3 GHz, VCE=3 V
8 7 6 5 4 3 2 1 C O LL EC T OR C U R R EN T (mA) 10 M AG
GT U (M AX ) |S 21 E |
2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor Typical Performance Curves (MP4T631035) Cont.
MP4T6310 Series
DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 V
2 00
DC CURRENT GAIN
1 50
1 00
50
0 1 C OL LE C TO R C U R R E N T (mA ) 10
OUTPUT POWER at 1 dB COMPRESSION POINT vs COLLECTOR CURRENT VCE=3V
3.5 3
POUT - 1dB (dBm)
2.5 f = 90 0 M H z 2 1.5 f = 2 GHz 1 0.5 0 6 .5 7 7 .5 8 8 .5 9 9.5 10 C OL LE C TO R C U R R E N T (mA )
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor Case Styles
Chip - MP4T631000 MP4T6310500
DIM. A B C D
MP4T6310 Series
BASE
INCHES (Nominal) 0.013 0.013 0.0016 0.0045
MM (Nominal) 0.35 0.35 0.040 0.11
B
D THICKNESS
EMITTER
A
C 2 PLCS.
SOT-23 - MP4T631033
F D C olle c tor M G B K A N
MP4T631033
DIM. A B C D E F G H J K L DIM. M N
NOTE: 1. Applicable on all sides
L H B a se J E m itte r C E
INCHES MIN. MAX. 0.048 0.008 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 GRADIENT 10 max. 1 2 . . . 30
MILLIMETERS MIN. MAX. 1.22 0.20 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 6
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor Case Styles (Con't)
Micro-X - MP4T631035 MP4T631035
DIM. A B C D E F G H
MP4T6310 Series
Emitter F 4 PLCS. E H
Collector B
Base
INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45
MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45
Emitter
A
C
G
D
SOT-143 - MP4T631039
MP4T631039
DIM. A B C D E F G H J K L M DIM. N P INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 GRADIENT 10 max. 1 2 . . . 30 MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6
E m itte r G J
B a se
A
P
N H
B L
M E K C olle c tor E m itte r D C F
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 7
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3 Volt, Low Noise High fT Silicon Transistor
MP4T6310 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440

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