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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and MRF5S19090HSR3. "H" suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5S19090LR3 RF Power Field Effect Transistors MRF5S19090LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 18 Watts Avg. Power Gain -- 14.5 dB Efficiency -- 25.8% ACPR -- - 51 dB IM3 -- - 37 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 261 1.49 - 65 to +200 200 Unit Vdc Vdc Watts W/C C C 1990 MHz, 18 W AVG., 2 x N - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION Freescale Semiconductor, Inc. CASE 465- 06, STYLE 1 NI - 780 MRF5S19090LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S19090LSR3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 90 W CW Case Temperature 80C, 18 W CW Symbol RJC Value (1,2) 0.67 0.75 Unit C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, For More Information On This Product, Go to: www.freescale.com Go to: www.freescale.com MRF5S19090LR3 MRF5S19090LSR3 1 ARCHIVE INFORMATION Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Symbol Min Typ Max Unit Freescale ARCHIVE Semiconductor, Inc. INFORMATION ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.7 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- 2.7 3.7 0.26 5 3.5 -- -- -- Vdc Vdc Vdc S FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth at f1 - 2.5 MHz and f2 = +2.5 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth at f1 - 885 kHz and f2 +885 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) (1) Part is internally matched both on input and output. Gps 13.5 14.5 -- dB 24 25.8 -- % IM3 -- - 37 - 35 dBc ACPR -- - 51 - 48 dBc IRL -- - 14.5 -9 dB MRF5S19090LR3 MRF5S19090LSR3 For More Information On This Product, 2 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Adc Freescale Semiconductor, Inc. B1 VGG R1 R2 + C3 C4 C5 R3 C7 W1 + C8 + C13 R4 C11 C12 + C9 VDD + C10 C6 Z9 Z6 RF INPUT Z1 Z2 C15 Z3 C14 C1 Z4 Z5 Z7 DUT Z8 Z10 Z11 Z12 C2 Z13 RF OUTPUT ARCHIVE INFORMATION Freescale Semiconductor, Inc. Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.140 0.450 0.140 0.525 0.636 0.340 0.320 x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.141 Microstrip x 0.050 Microstrip x 1.401 Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB 0.091 x 1.133 Microstrip 0.542 x 0.071 Microstrip 0.450 x 1.133 Microstrip 0.640 x 0.141 Microstrip 0.316 x 0.080 Microstrip 1.209 x 0.080 Microstrip Arlon GX - 0300 - 55 - 22, 30 mil, r = 2.55 Figure 1. MRF5S19090 Test Circuit Schematic Table 1. MRF5S19090 Test Circuit Component Designations and Values Part B1 C1 C2 C3, C13 C4, C12 C5, C11 C6, C7 C8 C9, C10 C14 C15 R1 R2 R3, R4 W1 Short RF Bead 22 pF Chip Capacitor, B Case 10 pF Chip Capacitor, B Case 1 F, 50 V SMT Tantalum Capacitors 0.1 F Chip Capacitors, B Case 1k pF Chip Capacitors, B Case 4.3 pF Chip Capacitors, B Case 10 F, 35 V SMT Tantalum Capacitor 22 F, 35 V SMT Tantalum Capacitors 2.7 pF Chip Capacitor, B Case 0.6 - 4.5 Gigatrim Variable Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors 1 turn 14 gauge wire Description Value, P/N or DWG 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark Newark Garrett Electronics MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19090LR3 MRF5S19090LSR3 3 ARCHIVE INFORMATION Freescale Semiconductor, Inc. C8 C7 VGG R1 B1 R2 C3 C4C5 CUT OUT AREA R3 C6 W1 C11 C12 R4 C13 VDD C9 C2 C10 C1 C14 C15 Freescale ARCHIVE Semiconductor, Inc. INFORMATION MRF5S19090 Rev 02 Figure 2. MRF5S19090 Test Circuit Component Layout MRF5S19090LR3 MRF5S19090LSR3 For More Information On This Product, 4 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%) 16 Gps 14 G ps , POWER GAIN (dB) VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) 30 40 12 IRL IM3 8 ACPR 20 IM3 (dBc), ACPR (dBc) 0 -10 -20 -30 -40 -50 10 -20 -40 ARCHIVE INFORMATION Freescale Semiconductor, Inc. f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 17 IDQ = 1300 mA G ps , POWER GAIN (dB) 16 1100 mA 850 mA 650 mA 14 450 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurement, 2.5 MHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -15 -20 -25 -30 -35 -40 -45 -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 650 mA IDQ = 450 mA 1100 mA 1300 mA 850 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurement, 2.5 MHz Tone Spacing 15 13 12 Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -25 Pout , OUTPUT POWER (dBm) -30 3rd Order -35 -40 -45 7th Order -50 -55 0.1 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA Two-Tone Measurements, Center Frequency = 1960 MHz 1 TWO-TONE SPACING (MHz) 10 56 55 54 53 52 51 50 49 48 47 46 45 31 32 33 34 35 36 37 38 39 40 41 42 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 1960 MHz Actual P1dB = 50.82 dBm (120.78 W) P3dB = 51.21 dBm (132.13 W) Ideal 5th Order Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19090LR3 MRF5S19090LSR3 5 ARCHIVE INFORMATION 6 -60 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 IRL, INPUT RETURN LOSS (dB) Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 Gps ACPR IM3 VDD = 28 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) IM3 -30 IM3 (dBc), ACPR (dBc) -35 -40 -45 -50 -55 -60 -65 Pout, OUTPUT POWER (WATTS) AVG. -25 15 10 5 0 1 Freescale ARCHIVE Semiconductor, Inc. INFORMATION Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 0 -10 -20 -30 -40 (dB) -50 -60 -70 -80 -90 -100 -7.5 -6 -4.5 -3 -IM3 @ 1.2288 MHz Integrated BW +IM3 @ 1.2288 MHz Integrated BW MTBF FACTOR (HOURS x AMPS2 ) 1.2288 MHz Channel BW 109 108 107 -ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (C) -1.5 0 1.5 3 4.5 6 7.5 This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. f, FREQUENCY (MHz) Figure 9. 2 - Carrier N - CDMA Spectrum Figure 10. MTBF Factor versus Junction Temperature MRF5S19090LR3 MRF5S19090LSR3 For More Information On This Product, 6 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION 10 Freescale Semiconductor, Inc. f = 1990 MHz Zload* f = 1930 MHz Zo = 10 f = 1990 MHz f = 1930 MHz Zsource ARCHIVE INFORMATION Freescale Semiconductor, Inc. VDD = 28 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz 1930 1960 1990 Zsource 2.98 - j5.12 3.36 - j4.65 4.06 - j4.64 Zload 2.07 - j1.31 2.02 - j1.18 1.93 - j1.01 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19090LR3 MRF5S19090LSR3 7 ARCHIVE INFORMATION Freescale Semiconductor, Inc. NOTES Freescale ARCHIVE Semiconductor, Inc. INFORMATION MRF5S19090LR3 MRF5S19090LSR3 For More Information On This Product, 8 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Freescale Semiconductor, Inc. NOTES ARCHIVE INFORMATION Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19090LR3 MRF5S19090LSR3 9 ARCHIVE INFORMATION Freescale Semiconductor, Inc. NOTES Freescale ARCHIVE Semiconductor, Inc. INFORMATION MRF5S19090LR3 MRF5S19090LSR3 For More Information On This Product, 10 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb M TA B M ccc M TA M B M ARCHIVE INFORMATION Freescale Semiconductor, Inc. N H (LID) S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE F NI - 780 MRF5S19090LR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE F NI - 780S MRF5S19090LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19090LR3 MRF5S19090LSR3 11 ARCHIVE INFORMATION Freescale Semiconductor, Inc. Freescale ARCHIVE Semiconductor, Inc. INFORMATION Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S19090LR3 MRF5S19090LSR3 MOTOROLA RF DEVICE DATA For For Moreto: www.freescale.com More Go Information This Product, Information On On This Product, 12 Go to: www.freescale.com MRF5S19090L/D ARCHIVE INFORMATION |
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