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Datasheet File OCR Text: |
Semiconductor MSM6791 MSM6791 DRAM Interface IC Semiconductor GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs (MSM6688 and MSM6788). FEATURES * DRAM ( 1-bit configuration) 1M-bit DRAM (MSM511000A, MSM511001A) : 8 pcs. can be connected. 4M-bit DRAM (MSM514100A, MSM514101A) : 8 pcs. can be connected. 16M-bit DRAM (MSM5116100A) : 2 pcs. can be connected. Note: MSM511002A/MSM514102A that corresponds to a static column mode cannot be used. 5V single rail 8MHz 10kbps, 12.5kbps, 16kbps in MSM6788 connection (8kHz sampling fixation) 7.5kbps, 9.4kbps, 12kbps in MSM6788 connection (6kHz sampling fixation) 16kbps~32kbps in MSM6688 connection (4kHz~8kHz sampling) * Power supply voltage : * Built-in refresh circuit (RAS only refresh) * Original oscillation frequency: * Bit rates: * Package: 44-pin plastic QFP (QFP44-P-910-2K) (Product name : MSM6791GS-2K) Semiconductor MSM6791 BLOCK DIAGRAM TEST TEST GND GND V DD VDD SAD Sin Pout 13 13 Column or Row Address Multiplexer Row.A11 10 TAS Address Multiplexer 12 A0 A1 A2 A3 A4 A5 A6 A7 R Column Address Counter Rerfresh Counter 12 A8 A9 A10 A11 CK SAS Column and Row Address Counter LD CK 3 XT XT OSC WE RWCK CS1 CS2 CS3 CS4 Timing Controller DRAM Controller CAS Controller CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 M1 M2 CAS8 XWE RAS DOUT XDIN MSM6791 Semiconductor PIN CONFIGURATION (TOP VIEW) A11 A10 VDD A6 A5 A4 36 A3 35 A9 A8 A7 A2 34 44 43 42 41 40 39 38 RWCK DOUT WE SAD SAS GND TEST TAS CS1 CS2 NC 37 1 2 3 4 5 6 7 8 9 10 11 33 32 31 30 29 28 27 26 25 24 23 A1 A0 RAS XDIN XWE GND XT XT CAS8 CAS7 CAS6 12 13 14 15 16 17 18 19 20 CAS3 21 CAS4 CS3 CS4 M1 M2 TEST CAS1 CAS2 44-Pin Plastic QFP NC: No-connection pin CAS5 VDD 22 Semiconductor MSM6791 PIN DESCRIPTION Symbol VDD GND XT XT TEST TEST SAD SAS TAS Type - - I O I I I I I Power supply Ground Oscillator Oscillator IC test. Use this pin by setting to `L' level. IC test. Use this pin by setting to `H' level. Read/write head address Clock to take the serial address data in the internal register Serial address data taken in the address register to the internal address counter Clock to read and write the information of the data register. The internal operation starts by the fall edge of RWCK. In a read mode, the data taken in XDIN is latched and it is output to the RWCK I DOUT pin. In a write mode, the DI/O output data of MSM6688/6788/6789 is taken in the DIN pin of the DRAM. In addition, the internal address counter automatically increments by the fall edge of RWCK and the address data output from A0 to A11. WE XWE A0~A11 RAS CAS1 ~ O I O DRAM control Data input Data output Chip select data in connecting DRAM By inputting a "L" level signal to each pin, up to 32M-bit of memory (8M-bit of memory for I each pin) can be controlled for four Pins. These pins become the input pins to select the highest address in 16M-bit DRAM connection. Set the connecting pattern of DRAM. M1 I M2 Connecting Mode Mode 0 Mode 1 Mode 2 Mode 3 M2 L L H H M1 L H L H DRAM Connecting Pattern 1M-bit DRAM 1~8pcs. connectable 4M-bit DRAM 1~8pcs. connectable (4M-bit DRAM 1pcs.) + (1M-bit DRAM 0~3pcs.) connectable 16M-bit DRAM 1~2pcs. connectable CAS8 XDIN DOUT CS1 CS2 CS3 CS4 I O O O Select a read mode and write mode. DRAM control DRAM address DRAM control Description MSM6791 Semiconductor ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Input Voltage Output Voltage Input Current Output Current Storage Temperature Symbol VDD VI VO II IO TSTG -- GND = 0V Ta = 25C Condition Rating -0.5 to +7 -0.5 to VDD+0.5 -0.5 to VDD+0.5 -10 to +10 -20 to +20 -65 to +150 Unit V V V mA mA C RECOMMENDED OPERATING CONDITIONS GND = 0V Parameter Supply Voltage Operating Temperature Oscillation Frequency Symbol VDD TOP fOSC Range 4.5 to 5.5 -40 to +85 8 Unit V C MHz ELECTRICAL CHARACTERISTICS DC Characteristics (Ta = -40 to +85C, VDD = 5V10% GND = 0V) Parameter "H" Level Input Voltage "L" Level Input Voltage "H" Level Input Current "L" Level Input Current 3-state Output Leak Current (includes open-drain output) H" Level Output Voltage "L" Level Output Voltage Operational Current Consumption Symbol VIH VIL IIH IIL IOZH IOZL VOH VOL IDD Condition -- -- VIH = VDD VIL = GND VOH = VDD VOL = GND IOH = -5.0 mA IOL = 5.0 mA Output open fOSC = 8MHz VIH = VDD VIL = GND -- -- 3 mA Min. 3.5 -0.3 -- -10 -- -10 2.4 VSS Typ. *1 -- -- 0.01 -0.01 0.01 -0.01 4.20 0.24 Max. VDD+0.3 1.5 10 -- 10 -- VDD 0.5 Unit V V mA mA mA mA V V *1 TYP means VDD=5.0V, Ta=25C 1M-bit DRAM 8 Semiconductor AVDD VCC RAS WE DOUT DIN RAS XWE XDIN APPLICATION CIRCUITS DVDD TEST VDD VDD MSM511000A (1) MSM511000A (2) MSM511000A (3) MSM511000A (4) MSM511000A (5) MSM511000A (6) MSM511000A (7) MSM511000A (8) RSEL1 RSEL2 SADX SAS TAS RWCK WE DI/O A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND SAD SAS TAS RWCK WE DOUT MSM6791 AGND MSM6688/6788 CS1 CS2 CS3 CS4 M1 M2 XT XT TEST GND GND CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 CS1 CS2 CS3 CS4 DGND 8MHz Figure 2. Application Circuit Example with eight 1M-bit DRAM connections. (connection mode 0) MSM6791 MSM6791 4M-bit DRAM 8 AVDD VDD VCC RAS WE DOUT DIN RAS XWE XDIN DVDD TEST VDD MSM514100A (2) MSM514100A (3) MSM514100A (4) MSM514100A (5) MSM514100A (6) MSM514100A (7) MSM514100A (8) APPLICATION CIRCUITS (Continued) MSM514100A (1) RSEL1 RSEL2 SADX SAS TAS RWCK WE DI/O SAD SAS TAS RWCK WE DOUT MSM6791 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND AGND DGND TEST GND GND MSM6688/6788 CS1 CS2 CS3 CS4 M1 M2 XT XT CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 CS1 CS2 CS3 CS4 8MHz Semiconductor Figure 3. Application Circuit Example with eight 4M-bit DRAM connections. (connection mode 1) 4M-bit DRAM 1 1M-bit DRAM 3 Semiconductor AVDD VDD VCC RAS WE DOUT DIN RAS WE DOUT DIN RAS WE DOUT DIN VCC VCC VCC DVDD TEST VDD RAS XWE XDIN APPLICATION CIRCUITS (Continued) RSEL1 RSEL2 SADX SAS TAS RWCK WE DI/O SAD SAS TAS RWCK WE DOUT MSM514100A (1) MSM511000A (2) MSM511000A (3) MSM511000A (4) MSM6791 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND GND CAS CAS RAS WE DOUT DIN A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 GND CAS AGND DGND MSM6688/6788 CS1 CS2 CS3 CS4 M2 M1 CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 XT XT 8MHz TEST GND GND CS1 CS2 CS3 CS4 GND Figure 4. Application Circuit Example with one 4M-bit DRAM and three 1M-bit DRAM connections. (connection mode 2) MSM6791 MSM6791 16M-bit DRAM 2 AVDD VDD VCC RAS WE DOUT DIN RAS WE DOUT DIN VCC VCC VCC RAS XWE XDIN DVDD TEST VDD APPLICATION CIRCUITS (Continued) RSEL1 RSEL2 SADX SAS TAS RWCK WE DI/O SAD SAS TAS RWCK WE DOUT MSM5116100 (1) MSM5116100 (2) MSM6791 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND GND A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Semiconductor AGND DGND MSM6688/6788 CS1 CS2 CS3 CS4 CS1 CS2 CS3 CS4 M2 M1 CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 XT XT 8MHz TEST GND GND CAS GND GND Figure 5. Application Circuit Example with two 16M-bit DRAM connections. (connection mode 3) 4M-bit DRAM 8 AVDD VCC RAS XWE DOUT DIN RAS XWE XDIN DVDD TEST VDD VDD Semiconductor MSM514100A (1) MSM514100A (2) MSM514100A (3) MSM514100A (4) MSM514100A (5) MSM514100A (6) MSM514100A (7) MSM514100A (8) RSEL1 RSEL2 SADX SAS TAS RWCK WE DI/O SADY SAD SAS TAS RWCK WE DOUT DROM A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND MSM6791 APPLICATION CIRCUITS (Continued) AGND MSM6688/6788 CS1 CS2 CS3 CS4 M1 M2 XT XT 8MHz TEST GND GND CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 VCC SADX SASX SADY SASY RDCK TAS DOUT CS1 CS2 TEST GND SADX SASX SADY SASY RDCK TAS VCC CS1 CS2 CS3 CS4 DGND Figure 6. Application Circuit Example when DRAM is used as a record/ playback memory of MSM6688/6788 and two 2M-bit serial voice ROMs (MSM6596-XXX) are used. MSM6596-XXX (1) MSM6791 DOUT CS1 CS2 TEST GND MSM6596-XXX (2) |
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