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| MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 5 6 9 10 16 15 14 3 4 17 7 8 11 12 T IC25 = 45 A VCES = 600 V VCE(sat) typ. = 1.9 V Preliminary Data Type: MWI 30-06 A7 MWI 30-06 A7T NTC - Option: without NTC with NTC T NTC IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 33 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 33 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 600 20 45 30 ICM = 60 VCEK VCES 10 140 V V A A A s W Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate l l l l l l l l l l l Advantages l l Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.5 200 50 50 270 40 1.4 1.0 1600 150 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.88 K/W l space savings reduced protection circuits package designed for wave soldering Typical Applications l l l VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 30 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.7 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 30 A VGE = 15 V; RG = 33 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 30 A (per IGBT) AC motor control AC servo and robot drives power supplies IXYS reserves the right to change limits, test conditions and dimensions. B3 - 2 (c) 2000 IXYS All rights reserved 023 MWI 30-06 A7 MWI 30-06 A7T Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 36 24 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Conditions IF = 30 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.0 1.5 13 90 2.2 1.7 V V A ns 2.11 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 42 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.09 V; R0 = 12 m Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.545 K/W Cth2 = 1.164 J/K; Rth2 = 0.155 K/W Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 0.636 K/W Cth2 = 1.766 J/K; Rth2 = 0.344 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 5 m mm mm K/W g (c) 2000 IXYS All rights reserved B3 - 3 023 MWI 30-06 A7 MWI 30-06 A7T 90 A 75 IC 90 A 75 VGE= 17V 15V 13V IC 60 11V 60 45 30 15 0 VGE= 17V 15V 13V 11V 45 30 9V TJ = 25C 15 0 9V TJ = 125C 0 1 2 3 4 VCE 5 V 6 0 1 2 3 4 VCE 5V 6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 90 A 75 IC IF 50 40 A 30 TJ = 125C TJ = 25C 60 45 30 TJ = 125C TJ = 25C VCE = 20V 20 10 0 0.0 15 0 4 6 8 10 12 VGE 14 V 16 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 40 A IRM 20 V 150 120 ns 90 60 TJ = 125C VR = 300V IF = 15A MWI3006A7 15 VGE trr trr 30 10 20 5 VCE = 300V IC = 30A 10 0 IRM 30 0 0 0 20 40 60 80 QG nC 100 120 0 200 400 600 800 A/s -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode B3 - 4 (c) 2000 IXYS All rights reserved MWI 30-06 A7 MWI 30-06 A7T 8 80 tr td(on) Eon ns 60 t VCE = 300V mJ VGE = 15V 2.0 mJ Eoff 1.5 VCE = 300V VGE = 15V TVJ = 125C Eoff 400 ns 300 t Eon R = 33 6G TVJ = 125C 4 40 1.0 RG = 33 td(off) 200 2 20 0.5 tf 0 20 40 IC 60 A 100 0 0 20 40 IC 60 A 0 0.0 0 Fig. 7 Typ. turn on energy and switching times versus collector current 4 80 ns tr Eon 40 60 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 2.0 400 ns 300 t Eon VCE = 300V mJ VGE = 15V = 30A I 3C TVJ = 125C td(on) VCE = 300V mJ VGE = 15V IC = 30A 1.5 T = 125C VJ td(off) 2 1.0 Eoff 200 1 0.5 tf 100 0 0 10 20 30 40 50 60 RG 20 70 80 0.0 0 10 20 30 40 50 60 RG 0 70 80 Fig. 9 Typ. turn on energy and switching times versus gate resistor 80 A ICM 10 K/W ZthJC 1 Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 60 0.1 40 0.01 20 RG = 33 TVJ = 125C 0.001 single pulse 0 0 100 200 300 400 500 600 VCE 700 V 0.0001 0.00001 0.0001 0.001 MWI3006A7 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved B3 - 5 |
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