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| MWI 50-12 A5 IGBT Modules Sixpack IC25 = 60 A = 1200 V VCES VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA W1 I 10 K10 A10 B10 R10 S10 F3 K3 P3 E10 F10 A1 M10 N10 V10 W10 E 72873 Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 k Continuous Transient TC = 25C TC = 80C TC = 80C, tP = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 47 , non repetitive VGE = 15 V, TJ = 125C, RG = 47 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1200 1200 20 30 60 40 80 10 ICM = 70 VCEK < VCES 280 150 -40 ... +150 V V V V A A A s A W C C V~ V~ Nm lb.in. mm mm m/s2 g oz. Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q q Advantages q q q space and weight savings reduced protection circuits package designed for wave soldering 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (M5) Creepage distance on surface Strike distance through air Max. allowable acceleration Typical 4000 4800 2.0 - 2.5 18 - 22 9 9 50 80 2.8 Typical Applications q q q Md dS dA a Weight AC motor control AC servo and robot drives power supplies Data according to a single IGBT/FRED unless otherwise stated. (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 50-12 A5 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 3.5 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 1.2 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 35 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 2 mA mA 200 nA V pF pF pF ns ns ns ns mJ mJ 0.44 K/W K/W 2.2 2000 300 140 100 2.8 Inductive load, TJ = 125C IC = 35 A, VGE = 15 V VCE = 600 V, RG = 47 80 500 70 5.4 4.2 with heatsink compound 0.88 Reverse Diode (FRED) Characteristic Values min. typ. 2.6 2.1 max. 2.8 2.5 50 30 20 200 2.6 V V A A A ns 1.3 K/W K/W Equivalent Circuits for Simulation Conduction VF IF IRM trr RthJC RthJS IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 35 A, VGE = 0 V, -diF/dt = 400 A/s TJ = 125C, VR = 600 V with heatsink compound IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.6 V; R0 = 28.0 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 24.9 m Thermal Response IGBT (typ.) Cth1 = 0.10 J/K; Rth1 = 0.430 K/W Cth2 = 0.25 J/K; Rth2 = 0.010 K/W Free Wheeling Diode (typ.) Cth1 = 0.05 J/K; Rth1 = 1.313 K/W Cth2 = 0.09 J/K; Rth2 = 0.025 K/W (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 50-12 A5 80 A 70 IC TJ = 25C VGE=17V 15V 13V 11V 80 A 70 IC 60 TJ = 125C VGE=17V 15V 13V 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 50 40 30 11V 9V 9V 20 10 3.0 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 A 70 IC VCE = 20V TJ = 25C 80 A 70 IF 60 50 40 30 20 10 0 TJ = 25C TJ = 125C 60 50 40 30 20 10 0 5 6 7 8 9 10 VGE 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 A IRM trr 20 V VCE = 600V IC = 35A 300 ns trr VGE 15 40 10 20 5 TJ = 125C VR = 600V IF = 35A 200 IRM 100 50-12 0 0 20 40 60 80 100 120 140 160 nC QG 0 0 200 400 600 800 A/s -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 50-12 A5 16 mJ Eon 160 ns 120 t Eoff 12 mJ 10 8 6 4 2 0 0 20 40 IC 60 12 td(off) Eoff 600 ns 500 400 t 300 200 100 8 td(on) tr 80 VCE = 600V VGE = 15V RG = 39 40 TJ = 125C VCE = 600V VGE = 15V RG = 39 TJ = 125C 4 Eon tf A 0 0 20 40 IC 60 A 0 80 0 80 Fig. 7 Typ. turn on energy and switching times versus collector current 20 240 td(on) tr Eon ns 180 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 10 mJ 1500 ns 1200 Eoff t 900 600 300 tf 0 mJ V = 15V GE Eon 15 IC = 35A TJ = 125C VCE = 600V 8 6 VCE = 600V VGE = 15V IC = 35A TJ = 125C td(off) 10 120 4 5 60 2 0 0 20 40 60 0 0 20 40 60 80 100 120 140 160 RG 0 80 100 120 140 160 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor 80 A 70 ICM 10 K/W 1 ZthJC RG = 39 TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 60 50 40 30 20 10 0 0 200 400 600 800 1000 1200 V VCE 0.1 0.01 0.001 diode IGBT single pulse 50-12 0.0001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 |
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