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| * * * * * * * PRELIMINARY Fast Recovery Epitaxial Diode INT-A -PAK MZK400TS60U Ultra-FastTM Speed FRED MZK MZC400TS60U Features International standard package With DBC ceramic base plate Planar passivated chips Short recovery time Low switching losses Ultra-soft recovery behaviour Industry standard package UL recongnition pending MZC VRRM = 600V IFAVM = 400A trr = 250ns Benefits * * * * * * Antiparallel diode for high frequency switching devices Increased operating efficiency Direct mounting to heatsink Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Low voltage peaks for reduced protection circuits Absolute Maximum Ratings Symbol VRSM & VRRM IFRMS IFAVM IFRM IFSM TC=75 C TC=75 oC; rectangular, d=0.5 tp<10s; rep. rating, pulse width limited by TVJM TVJ=45 C; t=10ms (50 Hz),sine o Test Conditions o Max. 600 560 400 2185 3300 3600 2880 3180 38400 39100 31100 31800 2500 1008 -40 to +150 -40 to +125 Units V A A A A A A A A2s A2s A2s A2s V W o t=8.3ms (60 Hz),sine TVJ=150 oC; t=10ms (50 Hz),sine t=8.3ms (60 Hz),sine It 2 TVJ=45 C; t=10ms (50 Hz),sine o t=8.3ms (60 Hz),sine TVJ=150 oC; t=10ms (50 Hz),sine t=8.3ms (60 Hz),sine VISOL PD TJ TSTG RMS Isolation Voltage, Any Terminal To Case, t=1 min TC=25 C o Operating Junction Temperature Range Storage Temperature Range C MZC400TS60U MZK400TS60U Termal / Mechanical Characteristics Parameter RJS RJC RCS Termal Resistance, Junction-to- Sink DC Termal Resistance, Junction-to- Case DC Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module Typ. 0.08 200 Max. 0.202 0.122 4.0 3.0 - Units o C/W N.m g Electrical Characteristics (unless otherwise specified) Parameter VRRM IR Reverse Breakdown Voltage Diode Leaking Current Min. 600 - Typ. 250 - Max. 16 5 100 1.17 1.36 1.41 1.52 0.85 1.14 300 66 110 Units V mA mA mA V V V V V m ns A A Conditions IR=16mA TVJ=25 oC VR=VRRM TVJ=25 oC VR=0.8VRRM TVJ=125 oC VR=0.8VRRM IF=230A; TVJ=125 oC TVJ= 25 oC IF=400A; TVJ=125 oC TVJ= 25 oC VF Diode Forward Voltage - VTO For power-loss calculations only - r6 trr@TVJ=100 oC Diode Reverse Recovery Time IRM@TVJ= 25 oC Diode Peak Reverse Current IRM@TVJ=100 oC Diode Peak Reverse Current - IF=400A VR=300V -di/dt=600A/s Case Outline - Int-a-pak Dimensions are shown in millimeters 2 |
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