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| SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B (SPACE QUALIFIED) FEATURES * SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz * HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz * GATE LENGTH = LG = 0.3 m * GATE WIDTH = WG = 280 m * HERMETIC SEALED CERAMIC PACKAGE * HIGH RELIABILITY 1.88 0.3 2 4 0.5 0.1 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 83B 1.88 0.3 1 4.0 MIN (ALL LEADS) 3 DESCRIPTION The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also results in low noise figure and high associated gain. The device is housed in a rugged hermetically sealed metal ceramic stripline package selected for industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1.0 0.1 1.45 MAX +0.07 0.1 -0.03 APPLICATION * BEST SUITED FOR LOW NOISE AMPS STAGE AT C AND X BAND ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF GA IDSS VGS(off) gM IGDO IGSO PARAMETERS AND CONDITIONS Noise Figure at VDS = 2 V, ID = 10 mA, f = 4 GHz Associated Gain at VDS = 2 V, ID = 10 mA, f = 4 GHz Saturated Drain Current at VDS = 2 V, VGS = 0 V Gate to Source Cut off Voltage at VDS = 2 V, ID = 100 A Transconductance at VDS = 2 V, ID = 10 mA Gate to Drain Leakage Current at VGD = -3 V Gate to Source Leakage Current at VGS = -3 V UNITS dB dB mA V ms A A 13.0 15 -0.2 45 MIN NE23383B TYP 0.35 15.0 40 -0.8 70 0.5 0.5 10 10 80 -2.0 MAX 0.45 California Eastern Laboratories NE23383B ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGS ID PTOT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V mA mW C C RATINGS 4.0 -3.0 IDSS 165 175 -65 to +175 SYMBOLS VDS ID PIN RECOMMENDED OPERATING CONDITIONS (TA = 25C) PART NUMBER PARAMETERS Drain to Source Voltage Drain Current Input Power V mA dBm NE23383B UNITS MIN TYP MAX 2 10 3 20 0 Note: 1. Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V 50 Total Power Dissipation, PTOT (mW) 200 Drain Current, ID (mA) 40 -0.2 V 30 150 100 20 -0.4 V 50 10 -0.6 V 0 50 100 150 200 250 0 1 2 3 4 5 Ambient Temperature, TA (C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 24 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21|2 (dB) VDS = 2 V 40 VDS = 2 V ID = 10 mA 20 MSG Drain Current, ID (mA) 30 16 |S21| 12 2 MAG 20 10 8 0 -2.0 -1.0 0 4 1 2 4 6 8 10 14 20 30 Gate to Source Voltage, VGS (V) Frequency, f (GHz) NE23383B TYPICAL NOISE PARAMETERS (TA = 25C) VDS = 2 V, ID = 10 mA FREQ. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin (dB) 0.32 0.35 0.41 0.50 0.62 0.75 0.88 1.02 1.15 GA (dB) 16.0 15.0 13.7 12.6 11.5 10.5 9.6 8.8 8.0 OPT MAG 0.90 0.80 0.70 0.61 0.53 0.48 0.45 0.44 0.48 ANG 26 51 75 101 127 154 -178 -147 -115 Rn/50 0.35 0.29 0.22 0.15 0.09 0.05 0.05 0.07 0.14 TYPICAL SCATTERING PARAMETERS (TA = 25C) NE23383B VDS = 2 V, ID = 10 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG 0.96 0.91 0.88 0.80 0.77 0.69 0.63 0.59 0.57 0.55 0.54 0.53 0.53 0.53 0.53 0.52 0.50 S11 ANG -39.94 -53.81 -64.11 -74.58 -85.67 -98.42 -115.67 -132.86 -145.83 -154.21 -164.09 -179.26 169.19 157.02 149.49 136.67 117.26 MAG 5.00 4.54 4.07 3.85 3.73 3.71 3.64 3.44 3.18 2.97 2.91 2.88 2.78 2.65 2.69 2.69 2.59 S21 ANG 141.49 125.98 113.15 100.67 88.48 75.46 60.60 46.21 32.90 22.06 10.84 -2.27 -16.05 -29.31 -41.55 -57.64 -76.16 MAG 0.03 0.04 0.05 0.05 0.06 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 S12 ANG 66.70 58.07 52.54 47.00 42.12 36.19 28.39 21.00 13.97 7.90 6.58 3.61 -4.59 -9.21 -10.08 -17.82 -30.52 MAG 0.52 0.54 0.54 0.57 0.51 0.46 0.41 0.40 0.41 0.43 0.46 0.47 0.46 0.49 0.55 0.58 0.61 S22 ANG -25.96 -38.70 -44.90 -51.85 -57.28 -66.10 -80.09 -95.43 -109.27 -115.64 -120.71 -131.41 -146.02 -156.04 -166.37 -177.96 -159.46 0.22 0.36 0.46 0.67 0.76 0.90 0.98 1.07 1.12 1.26 1.24 1.15 1.20 1.18 0.98 0.85 0.81 K Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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