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NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
* * * * * HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. M04
NE661M04
DESCRIPTION
NEC's NE661M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE661M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCE = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 mA Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 2 mA, f = 2 GHz, ZIN = ZOPT Output Power at 1 dB compression point at VCE = 2 V, IC = 5 mA, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 5 mA, f = 2 GHz Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz GHz dB dB dB dBm dBm pF 14 UNITS A A 50 20 70 25 22 17 1.2 5 15 0.08 0.12 1.5 MIN NE661M04 2SC5507 M04 TYP MAX 0.1 0.1 100
DC
IEBO hFE fT MSG |S21E|2 NF P1dB IP3 Cre
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12
RF
California Eastern Laboratories
NE661M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 15 3.3 1.5 12 39 150 -65 to +150
TYPICAL NOISE PARAMETERS (TA = 25C)
FREQ. (GHz) NFOPT (dB) GA (dB) OPT MAG ANG Rn/50
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
VC = 1 V, IC = 1 mA 0.50 1.08 0.90 1.13 1.00 1.14 1.50 1.20 2.00 1.29 2.50 1.40 3.00 1.55 VC = 2 V, IC = 1 mA 0.50 0.90 1.00 1.50 2.00 2.50 3.00 1.12 1.15 1.16 1.23 1.32 1.45 1.60
21.40 18.90 18.40 15.70 14.20 13.20 12.50
0.67 0.64 0.64 0.63 0.62 0.61 0.60
13 31 33 43 50 59 67
0.60 0.64 0.64 0.64 0.62 0.55 0.45
THERMAL RESISTANCE
ITEM Junction to Case Resistance Junction to Ambient Resistance SYMBOL Rth j-c Rth j-a VALUE 240 650 UNIT C/W C/W
21.70 19.50 19.10 16.50 14.70 13.90 13.30
0.69 0.66 0.65 0.64 0.64 0.63 0.62
13 26 30 37 46 60 69
0.57 0.56 0.55 0.69 0.68 0.55 0.52
VC = 2 V, IC = 5 mA 0.50 0.90 1.00 1.50 2.00 2.50 3.00 1.69 1.70 1.70 1.72 1.75 1.79 1.85 27.41 23.80 23.00 20.24 17.93 16.77 16.30 0.41 0.41 0.41 0.40 0.39 0.38 0.36 14 30 34 40 47 55 64 0.60 0.64 0.64 0.64 0.62 0.55 0.45
TYPICAL OPTIMAL NOISE MATCHING (TA = 25C)
VC = 1 V, lC = 1 mA
1.0 0.5 OPT 0.2 5.0 2.0
0.5 OPT 0.2 5.0
VC = 2 V, lC = 1 mA
1.0 2.0
0
0.2
0.5
1.0
2.0
5.0
0
0
0.2
0.5
1.0
2.0
5.0
0
-0.2
-5.0
-0.2
-5.0
-0.5 -1.0
-2.0
-0.5 -1.0
-2.0
VC = 2 V, lC = 5 mA
1.0 0.5 2.0
0.2
OPT
5.0
0
0.2
0.5
1.0
2.0
5.0
0
-0.2
-5.0
-0.5 -1.0
-2.0
NE661M04 TYPICAL PERFORMANCE CURVES (TA = 25C)
DC POWER DERATING CURVES
100
COLLECTOR CURRENT vs. DC BASE VOLTAGE
50
VCE = 2 V
Total Power Dissipation, PT (mW)
75 Device Mounted on a Ceramic PCB
Collector Current, IC (mA)
40
30
50
20
25 Free Air
10
0 50 100 117 134 150
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature, TA (C)
DC Base Voltage, VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
10
140 A 120 A
100
FORWARD CURRENT GAIN vs. COLLECTOR GAIN
Collector Current, Ic (mA)
8
100 A 80 A 60 A
DC Forward Current Gain, hFE
80
6
60
4
40 A 20 A IB = 5 A
40
2
20
0
1.0
2.0
3.0
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
Reverse Transfer Capacitance, Cre (pF)
0.30
Gain Bandwidth Product, fT (GHz)
f = 1 MHz 0.25 0.20 0.15 0.10 0.05
VCE = 3 V f = 2 GHz
25 20 15 10 5 0
0
1.0
2.0
3.0
4.0
5.0
1
10
100
Collector to Base Voltage, VCB (V)
Collector Current, IC (mA)
NE661M04 TYPICAL PERFORMANCE CURVES (TA = 25C)
NOISE FIGURE vs. FREQUENCY
1.8 VDS = 1 V ID = 1 mA 1.8 VDS = 2 V ID = 1 mA
NOISE FIGURE vs. FREQUENCY
1.6
25 GA
Associated Gain, GA (dB)
1.6 GA 1.4 NF 1.2
25
Noise Figure, NF (dB)
1.4 NF 1.2
20
20
15
15
1.0
10
1.0
10
0.8 0 0.5 1 1.5 2 2.5 3 3.5
5
0.8 0 0.5 1 1.5 2 2.5 3 3.5
5
Frequency, f (GHz)
Frequency, f (GHz)
NOISE FIGURE vs. FREQUENCY
1.86 1.84
INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY
Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
40 35 30 25 20 15 10 5 0 0.1 1.0 10.0 |S21e|2 MSG MAG VCE = 2 V IC = 5 mA
Noise Figure, NF (dB)
1.82 GA 1.80 1.78 1.76 NF 1.74 1.72 1.70 1.68 0 0.5 1 1.5 2 2.5 3 3.5 VDS = 2 V ID = 5 mA
30 25 20 15 10 5 0
Frequency, f (GHz)
Associated Gain, GA (dB)
Frequency, f (GHz)
INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. COLLECTOR CURRENT
OUTPUT, COLLECTOR CURRENT vs. INPUT POWER
10 25 f = 2 GHz VCE = 2 V
Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 MSG 20 15 10 5 0 |S21e|2 MAG
f = 2 GHz VCE = 2 V
Pout
20
Output Power, Pout (dBm)
5
0
15
-5 IC -10
10
5
1
10
100
-15 -30
0 -25 -20 -15 -10 -5
Collector Current, IC (mA)
Input Power, Pin (dBm)
Associated Gain, GA (dB)
Noise Figure, NF (dB)
NE661M04 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50
+90 +120 +60
j100
j25
+150
j10 8 GHz
+30
0
10
25
50
100
S11 S22 0.1 GHz 0.1 GHz
+180
S12 0.1 GHz
S21 0.1 GHz 8 GHz 8 GHz +0
-j10
8 GHz
-150
-30
-j25 -j50
- j100
-120
-60 -90
Coordinates in Ohms Frequency in GHz (VCE = 1 V, IC = 1 mA)
VC = 1 V, IC = 1 mA
FREQUENCY (GHz) MAG 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 0.944 0.943 0.941 0.939 0.935 0.930 0.916 0.862 0.807 0.755 0.693 0.636 0.585 0.515 0.489 0.480 0.495 S11 ANG -4.3 -8.0 -11.9 -15.4 -19.2 -26.7 -37.4 -55.4 -72.7 -89.4 -106.9 -124.7 -143.5 178.7 143.2 109.3 75.6 MAG 2.912 2.868 2.845 2.837 2.845 2.807 2.734 2.614 2.526 2.337 2.236 2.095 1.977 1.746 1.521 1.325 1.155 S21 ANG 172.0 171.3 168.3 164.2 160.7 153.5 144.1 126.2 110.8 96.3 82.4 68.9 55.6 30.4 6.9 -14.4 -34.5 MAG 0.005 0.009 0.013 0.017 0.021 0.028 0.038 0.051 0.061 0.068 0.071 0.072 0.071 0.066 0.061 0.066 0.076 S12 ANG 84.9 77.9 75.1 73.0 70.8 66.3 59.6 46.5 36.2 26.8 18.3 10.7 4.5 -2.9 -1.9 0.9 2.0 MAG 0.991 0.970 0.955 0.943 0.935 0.922 0.906 0.850 0.821 0.794 0.768 0.744 0.723 0.696 0.689 0.688 0.679 S22 ANG -4.3 -7.6 -10.2 -12.8 -15.2 -19.9 -26.7 -37.3 -46.6 -55.1 -62.8 -70.1 -77.2 -91.7 -106.9 -119.9 -131.9 0.15 0.22 0.22 0.23 0.22 0.22 0.22 0.39 0.49 0.61 0.75 0.92 1.11 1.53 1.89 2.05 2.04 K MAG1 (dB) 27.53 24.88 23.30 22.21 21.37 20.00 18.57 17.08 16.16 15.38 14.96 14.61 12.45 9.96 8.49 7.22 5.98
Note: 1. Gain Calculation:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE661M04 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50
+90
j25
j100
+120
+60
+150
j10
+30
12 GHz 0
10 25 50 100
12 GHz S22 0.1 GHz
S11 0.1 GHz
+180
S21 0.1 GHz
S12 0.1 GHz +0 12 GHz 12 GHz
-j10
-150 -30
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz (VCE = 2 V, IC = 1 mA)
-120 -90
-60
VC = 2 V, IC = 1 mA
FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG 0.946 0.945 0.943 0.941 0.938 0.933 0.921 0.869 0.816 0.765 0.647 0.703 0.593 0.518 0.485 0.472 0.483 0.541 0.604 0.653 0.691 ANG -4.2 -7.7 -11.6 -14.9 -18.6 -25.9 -36.3 -53.9 -70.7 -87.0 -121.6 -104.1 -139.9 -177.4 147.0 112.6 78.3 49.9 28.4 10.2 -7.9 MAG 2.929 2.882 2.860 2.853 2.861 2.825 2.756 2.643 2.563 2.377 2.142 2.281 2.027 1.799 1.573 1.372 1.197 1.039 0.914 0.821 0.734 S21 ANG 172.1 171.5 168.6 164.6 161.2 154.2 145.0 127.4 112.3 98.0 70.9 84.2 57.7 32.7 9.1 -12.2 -32.2 -51.0 -67.6 -84.2 -101.2 MAG 0.005 0.008 0.012 0.015 0.018 0.025 0.033 0.045 0.053 0.059 0.063 0.062 0.062 0.057 0.056 0.064 0.078 0.098 0.120 0.144 0.168 S12 ANG 84.2 76.7 74.8 72.6 70.6 66.5 60.4 47.8 38.1 29.2 14.4 21.3 9.4 4.6 8.2 11.0 10.5 4.2 -3.8 -15.4 -29.3 MAG 0.992 0.971 0.956 0.944 0.937 0.924 0.909 0.856 0.829 0.805 0.759 0.781 0.740 0.716 0.711 0.711 0.704 0.700 0.697 0.698 0.693 S22 ANG -4.2 -7.4 -10.0 -12.4 -14.7 -19.3 -25.9 -36.2 -45.2 -53.4 -68.1 -60.9 -75.2 -89.6 -104.7 -117.7 -129.7 -142.3 -154.8 -169.7 173.1 0.16 0.25 0.24 0.25 0.24 0.23 0.23 0.40 0.50 0.62 0.94 0.76 1.14 1.58 1.86 1.89 1.82 1.56 1.30 1.07 0.96 K MAG1 (dB) 28.12 25.51 23.91 22.79 21.95 20.61 19.19 17.72 16.82 16.05 15.33 15.65 12.87 10.51 9.10 7.86 6.62 5.85 5.53 5.90 6.41
Note: 1. Gain Calculation:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE661M04 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+120
+90 +60
+150
+30
j10 18 GHz
S12 0.1 GHz S21 0.1 GHz
0
10
25
50
100
S11 0.1 GHz S22 0.1 GHz
+180
18 GHz
+0
18 GHz
-j10
-150
-30
-j25
18 GHz -j50
-j100
Coordinates in Ohms Frequency in GHz (VCE = 2 V, IC = 5 mA)
-120 -90
-60
VC = 2 V, IC = 5 mA
FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 S11 MAG 0.823 0.816 0.807 0.797 0.784 0.757 0.710 0.592 0.498 0.417 0.345 0.289 0.249 0.221 0.235 0.255 0.298 0.371 0.439 0.497 0.547 0.597 0.648 0.693 0.732 0.758 0.787 ANG -5.3 -11.4 -17.0 -22.0 -27.2 -37.1 -51.0 -71.5 -89.6 -106.7 -124.2 -143.0 -163.9 153.2 117.2 84.3 53.7 32.9 18.4 5.3 -9.8 -26.5 -42.6 -53.5 -64.5 -77.4 -89.6 MAG 10.113 9.907 9.734 9.571 9.433 9.037 8.386 7.208 6.429 5.446 4.809 4.283 3.862 3.218 2.732 2.369 2.074 1.834 1.657 1.521 1.395 1.269 1.147 1.041 0.963 0.864 0.756 S21 ANG 172.3 167.9 163.0 158.1 153.3 144.0 131.4 111.1 95.0 80.7 67.8 55.9 44.7 23.5 3.3 -15.7 -33.9 -51.5 -67.9 -85.1 -103.4 -121.9 -140.2 -158.0 -176.4 163.2 144.0 MAG S12 ANG MAG 0.979 0.954 0.933 0.916 0.902 0.873 0.836 0.748 0.704 0.672 0.649 0.631 0.619 0.606 0.614 0.621 0.622 0.625 0.624 0.625 0.622 0.606 0.575 0.522 0.488 0.434 0.368 0.004 81.5 0.008 75.6 0.011 72.1 0.014 70.1 0.017 67.9 0.022 63.3 0.029 57.0 0.036 47.3 0.042 41.5 0.046 37.6 0.050 34.7 0.054 32.2 0.058 30.0 0.067 25.3 0.078 19.5 0.090 11.9 0.101 3.5 0.114 -5.1 0.130 -13.2 0.149 -23.8 0.167 -36.4 0.185 -50.4 0.193 -64.4 0.204 -77.1 0.221 -91.0 0.230 -107.7 0.230 -122.4 S22 ANG -5.1 -9.1 -12.5 -15.5 -18.5 -23.9 -31.3 -41.2 -49.1 -55.9 -62.1 -68.0 -74.1 -87.3 -101.9 -114.5 -125.8 -138.3 -150.4 -165.1 178.1 162.0 146.0 127.4 106.8 79.8 52.7 0.27 0.32 0.34 0.34 0.35 0.37 0.43 0.67 0.83 0.98 1.11 1.23 1.30 1.37 1.35 1.31 1.30 1.20 1.08 0.93 0.83 0.76 0.76 0.77 0.71 0.77 0.88 K MAG1 (dB) 34.04 31.13 29.55 28.41 27.54 26.18 24.69 23.00 21.77 20.73 17.80 16.15 14.95 13.17 11.92 10.86 9.84 9.31 9.33 10.10 9.22 8.37 7.73 7.08 6.39 5.75 5.16
Note: 1. Gain Calculation:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE661M04 OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M04
2.050.1 +0.1 0.40-0.06 2 1.250.1 3
ORDERING INFORMATION
PART NUMBER NE661M04-T2-A QUANTITY 3000 PACKAGING Tape & Reel
T78
0.60 2.0 0.1 1.25 0.65 1 +0.1 0.30-0.05 (Leads 1, 3, 4)
0.65 1.30 0.65 4
0.590.05
0.11 +0.1 -0.08
PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base
NE661M04 NONLINEAR MODEL
SCHEMATIC
LBX Base LB
CCBPKG CCB LC CCE LCX Collector
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.2e-18 120 1 39.7 0.21 4.64e-14 2.09 10 1.004 1.9 0.1 1.1e-11 41 3.5 14 14 0.004 8 0.3e-12 0.5 0.33 0.001e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.33 1 0 0.75 0 0.5 2e-12 20 10 0.1 200 1e-11 1.11 0 3 0 1
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPK LBX LCX LEX NE661M04 0.08e-12 0.1e-12 0.93e-9 0.6e-9 0.2e-9 0.001e-12 0.25e-12 0.2e-12 0.2e-9 0.2e-9 0.05e-9
MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 1 mA to 7 mA Date: 02/2002
(1) Gummel-Poon Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 01/03/2002
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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