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| PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 FEATURES * NEW MINIATURE M23 PACKAGE: - World's smallest transistor package footprint -- leads are completely underneath package body - Low profile/0.55 mm package height - Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: NF = 1.4 dB OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M23 0.5 * * 1 0.25 1.0 0.4 2 3 0.25 DESCRIPTION 0.6 0.15 0.2 0.15 The NE681M23 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE681 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles. BOTTOM VIEW 0.55 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Forward Current Gain at VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF UNITS GHz dB dB 10 80 MIN 4.5 NE681M23 2SC5650 M23 TYP 7 1.4 12 145 0.8 0.8 0.9 2.7 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE681M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 20 10 1.5 65 TBD 150 -65 to +150 80 VCE = 2 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, IC (mA) 60 40 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 20 0 0 20 40 60 80 100 120 TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 IB 70 A step 1000 Base to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V Collector Current, IC (mA) 80 60 350 A DC Current Gain, hFE 700 A 100 40 20 IB = 70 A 0 0 3 6 9 12 10 0.1 1.0 10.0 100.0 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENT 8 NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 3 V f = 1 GHz 20 Gain Bandwidth Product, fT (GHz) 7 8 6 5 4 3 2 1 0 1 VCE = 3 V f = 1 GHz 10 100 6 12 4 8 2 NF 0 1 10 100 4 0 Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR Collector Current, IC (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 02/10/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE Associated Gain, GA (dB) GA 16 Noise Figure, NF (dB) |
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