NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier
Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Electrical Charactristics: (TA = +25C unless otherwise specified)
Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage NTE16 NTE17 Transition Frequency NTE16 NTE17 Output Capacitance NTE16 NTE17 Cob VCB = 12V, IE = 0, f = 1MHz fT VCE = 12V, IE = 2mA Symbol Test Conditions Min 40 50 5 - - 270 - - - - - - Typ - - - - - - - 0.1 180 140 2.0 4.0 Max - - - 0.5 0.5 560 0.4 0.5 - - 3.5 5.0 V V MHz MHz pF pF Unit V V V A A V(BR)CEO IC = 1mA V(BR)CBO IC = 50A V(BR)EBO IE = 50A ICBO IEBO hFE VCE(sat) VCB = 30V VEB = 4V VCE = 6V, IC = 1mA IC = 50mA, IB = 5mA
.102 (2.6)
.280 (7.11) .185 (4.7)
E
C
B
.100 (2.54) .051 (1.29)
.138 (3.5) .022 (0.55)
|
