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| NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 - 70 @ IC = 4A D Collector-Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 VCER(sus) IC = 200mA, RBE = 100, Note 1 ICEO ICEX Emitter Cutoff Current IEBO VCE = 30V, IB = 0 VCE = 100V, VBE(off) = 1.5V VCE = 100V, VBE(off) = 1.5V, TC = +150C VBE = 7V, IC = 0 60 70 - - - - - - - - - - - - 0.7 1.0 5.0 5.0 V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC =+25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Second Breakdown Second Breakdown Collector Current with Base Forward Biased Dynamic Characteristics Current Gain-Bandwidth Product Small-Signal Current Gain Small-Signal Current Gain Cutoff Frequency fT hfe fhfe IC = 500mA, VCE = 10V, f = 1MHz IC = 1A, VCE = 4V, f = 1kHz VCE = 4V, IC = 1A, f = 1kHz 2.5 15 10 - - - - 120 - kHz MHz Is/b VCE = 40V, t = 1.0s; Nonrepetitive 2.87 - - A hFE VCE(sat) VBE(on) IC = 4A, VCE = 4V IC = 10A, VCE = 4V IC = 4A, IB = 400mA IC = 10A, IB = 3.3A IC = 4A, VCE = 4V 20 5 - - - - - - - - 70 - 1.1 3.0 1.5 V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE219
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