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| NTE2308 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pules test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Cob Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.6A VCE = 5V, IC = 8A Current Gain-Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance VCE = 10V, IC = 1.6A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A VCB = 10V, f = 1MHz Min - - 15 8 - - - - Typ - - - - 20 - - 160 Max 10 10 - - - 1.0 1.5 - MHz V V pF Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Symbol Test Conditions Min 500 400 7 400 400 450 - - - Typ - - - - - - - - - Max - - - - - - 1.0 2.5 1.0 Unit V V V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)CBO IC = 10mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCEO(sus) IC = 12A, IB = 2.4A, L = 50H VCEX(sus) IC = 12A, IB1 = 2.4A, L= 200H, IB2 = -2.4A, Clamped IC = 3A, IB1 = 0.6A, L= 200H, IB2 = -0.6A, Clamped Turn-On Time Storage Time Fall Time ton tstg tf VCC = 200V, IC = 10A, IB1 = 2A, IB2 = -2A, RL = 20 .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
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