NTE2413 Silicon PNP Transistor General Purpose, High Voltage Amp, (Compl to NTE2412)
Description: The NTE2413 is a silicon PNP transistor in an SOT-23 type surface mount package designed for use primarily in telephone and professional communication equipment. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Emitter Voltage (RBE = 2.7k), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA +35C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50K/W Thermal Resistance, Tab-to-Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260K/W Thermal Resistance, Soldering Points-to-Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 60K/W Note 1. Mounted on a ceramic substrate 2.5cm2 x 0.7mm. Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Collector Cutoff Current Symbol ICBO ICER Test Conditions VCB = 200V, IE = 0 VCE = 250V, RBE = 2.7k VCE = 200V, RBE = 2.7k, TJ = +150C Collector-Emitter Saturation Voltage DC Current Gain Transition Frequency Capacitance VCE(sat) hFE fT Cre IC = 30mA, IB = 5mA VCE = 20V, IC = 25mA VCE = 10V, IE = 10mA, f = 35MHz VCE = 30V, IC = 0, f = 1MHz Min - - - - 50 60 - Typ - - - - - - - Max 10 50 10 0.8 - - 1.6 MHz pF Unit nA nA A V
.016 (0.48)
C B E
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3)
.043 (1.1)
.007 (0.2)
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