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 NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)
Description: The NTE2430 is a silicon NPN transistor in a SOT-89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings: Collector-Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA +25C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Electrical Characteristics: (TJ = +25C unles otherwise specified)
Parameter
Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector Capacitance Transitional Frequency
Symbol
ICES IEBO VCE(sat) VBE(sat) hFE Cc fT
Test Conditions
VCE = 300V, IB = 0 VEB = 5V, IC = 0 IC = 50mA, IB = 4mA IC = 50mA, IB = 4mA VCE = 10V, IC = 20mA IE = Ie = 0, VCB = 10, f = 1MHz VCE = 10V, IC = 10mA, f = 5MHz
Min
- - - - 40 - 70
Typ
- - - - - - -
Max
20 10 500 1.3 - 2 -
Unit
nA A mV V
pF MHz
.174 (4.42) .059 (1.5) .067 (1.7)
.096 (2.46) .161 (4.1)
E
C
B
.041 (1.05) Min
.015 (0.32)
.020 (.508) .059 (1.5) .118 (3.0) Bottom View


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