NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV
Features: D High Gain Bandwidth Product: fT = 800MHz Typ. D Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: Cre = 2.9pF NTE2512: Cre = 4.6pF Applications: D Very High-Definition CRT Display D Video Output D Color TV Chroma Output D Wide-Band Amp Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 60V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 50mA VCE = 10V, IC = 400mA VCE = 10V, IC = 100mA Min - - 100 20 - Typ - - - - 800 Max 0.1 1.0 320 - - MHz Unit A A
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Collector Emitter Saturation Voltage NTE2511 NTE2512 Base Emitter Saturation Voltage Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Output Capacitance NTE2511 NTE2512 Reverse Transfer Capacitance NTE2511 NTE2512 Cre VCB = 30V, f = 1MHz VBE(sat) IC = 100mA, IB = 10mA V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 100A, IC = 0 Cob VCB = 30V, f = 1MHz Symbol VCE(sat) Test Conditions IC = 100mA, IB = 10mA Min - - - 80 60 4 - - - - Typ - - - - - - 3.4 5.2 2.9 4.6 Max 0.6 0.8 1.0 - - - - - - - Unit V V V V V V pF pF pF pF
.330 (8.38) Max .175 (4.45) Max
.450 (11.4) Max
.118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B
.090 (2.28) .130 (3.3) Max
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