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| Datasheet File OCR Text: |
| NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D High Current Capacity and Wide ASO Applications: D Voltage Regulators D Relay Drivers D Lamp Drivers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 50V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 2A VCE = 10V, IC = 50mA Min - - 140 35 - Typ - - - - 140 Max 100 100 400 - - MHz Unit nA nA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Output Capacitance NTE2517 NTE2518 Collector to Emitter Saturation Voltage NTE2517 NTE2518 Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-On Time Storage Time NTE2517 NTE2518 Fall Time tf VBE(sat) IC = 1A, IB = 50mA V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 ton tstg IC = 10A, IB1 = 10A, IB2 = 1A VCE(sat) IC = 1A, IB = 50mA Symbol Cob Test Conditions VCB = 10V, f = 1MHz Min - - - - - 60 50 6 - - - - Typ 10 25 110 250 0.85 - - - 35 550 350 30 Max - - 300 500 1.2 - - - - - - - Unit pF pF mV mV V V V V ns ns ns ns .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4) |
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