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| NTE2539 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Test Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 3.2A VCE = 5V, IC = 16A VCE = 5V, IC = 10mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 16A, IB = 3.2A IC = 16A, IB = 3.2A Min - - 15 10 10 - - Typ - - - - - - - Max 10 10 50 - - 0.8 1.5 V V Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Gain-Bandwidth Product Output Capacitance Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol fT Cob Test Conditions VCE = 10V, IC = 3.2A VCB = 10V, f = 1MHz Min - - 500 400 7 400 - - - Typ 20 300 - - - - - - - Max - - - - - - 0.5 2.5 0.3 Unit MHz pF V V V V s s s V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 VCEX(sus) IC = 10A, IB1 = 1A, IB2 = -4A, L = 200H Clamped ton tstg tf IC = 20A, IB1 = 4A, IB2 = -8A, RL = 10, VCC = 200V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
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