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| NTE2562 (NPN) & NTE2563 (PNP) Silicon Complementary Transistors High Current Switch Description: The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type package designed for use as a high current switch. Typical application include relay drivers, high- speed inverters, converters, etc. Features: D Low Collector-Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 6A Current Gain-Bandwidth Product VCE = 5V, IC = 1A Min - - 100 30 - Typ - - - - 120 Max 0.1 0.1 200 - - MHz Unit mA mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage NTE2562 NTE2563 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Turn-On Time NTE2562 NTE2563 Storage Time NTE2562 NTE2563 Fall Time tf tstg V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 1mA, IC = 0 ton VCC = 10V, VBE = -5V, 10IB1 = -10IB2 = IC = 5A, Pulse Width = 20s, Duty Cycle = 1% Symbol VCE(sat) Test Conditions IC = 5A, IB = 0.25A Min - - 60 30 6 - - - - - Typ - - - - - 0.2 0.1 0.5 0.3 0.03 Max 0.4 0.5 - - - - - - - - Unit V V V V V s s s s s .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated |
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