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| Datasheet File OCR Text: |
| NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors General Purpose Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Absolute Maximum Ratings: Collector-Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation, Ptot TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO ICEV Test Conditions VCB = 120V, IE = 0 VCE = 80V, IB = 0 VCE = 120V, VBE = -1.5V VCE = 120V, VBE = -1.5V, TC = +150C VEB = 4V, IC = 0 IC = 250mA, IB = 25mA, Note 1 IC = 500mA, IB = 50mA, Note 1 IC = 1A, IB = 200mA, Note 1 Min - - - - - 120 - - - Typ - - - - - - - - - Max Unit 1 10 1 1 1 - 0.6 1.0 2.0 A A A mA A V V V V Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IEBO VCE(sat) VCEO(sus) IC = 10mA, IB = 0, Note 1 Note 1. Pulse Duration = 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Base-Emitter Voltage DC Current Gain Symbol VBE hFE fT Ccbo hfe Test Conditions VCE = 2V, IC = 250mA VCE = 2V, IC = 250mA, Note 1 VCE = 2V, IC = 1A, Note 1 VCE = 10V, IC = 100mA, f = 10MHz VCB = 20V, IE = 0, f = 1MHz VCE = 1.5V, IC = 200mA, f = 1kHz Min - 40 5 30 - 40 Typ - - - - - - Max Unit 1.0 150 - - 50 - V - - MHz pF - Transition Frequency Collector-Base Capacitance Small-Signal Current Gain Note 1. Pulse Duration = 300s, Duty Cycle 2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
Price & Availability of NTE324
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