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| Datasheet File OCR Text: |
| NTE353 Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz Description: The NTE353 is designed for 12.5 Volt VHF large-signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness. D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink. D Exceptional Power Output Stability versus Temperature. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45.7mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CES Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO ICBO ICES IC = 10mA, IB = 0 IC = 5mA, VBE = 0 IE = 1mA, IC = 0 VCB = 15V, IE = 0 VCE = 15V, VBE = 0, TC = +55C 18 36 4 - - - - - - - - - - 250 5 V V V A mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Collector Efficiency GPE POUT = 4W, VCC = 12.5V, ICmax = 620mA, f = 175MHz POUT = 4W, VCC = 12.5V, f = 175MHz 12 50 - - - - dB % Cob VCB = 12.5V, IE = 0, f = 100kHz - 17 20 pF hFE VCE = 5V, IC = 250mA 5 - - Symbol Test Conditions Min Typ Max Unit .725 (18.42) E .250 (6.35) B .225 (5.72) E C .122 (3.1) Dia (2 Holes) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14) |
Price & Availability of NTE353
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