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NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch
Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high-voltage, high- speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115 and 220V switch-mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits. Features: D VCEO(sus) = 400V D Reverse Bias SOA with Inductive Loads @ TC = +100C D 700V Blocking Capability Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Emitter Current, IE Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Lead Temperature (During Soldering, 1/8" from case for 5sec), TL . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 10mA, IB = 0 ICEV VCEV = 700V, VBE(off) = 1.5V VCEV = 700V, VBE(off) = 1.5V, TC = +100C Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE VCE(sat) IC = 5A, VCE = 5V IC = 8A, VCE = 5V Collector-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 8A, IB = 1.6A, TC = +100C Base-Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A, TC = +100C Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Switching Characteristics Resistive Load Delay Time Rise Time Storage Tme Fall Time Inductive Load, Clamped Voltage Storage Time Crossover Time tsv tc IC = 8A, Vclamp = 300V, IB1 = 1.6A, VBE(off) = 5V, TC = +100C - - 0.92 0.12 2.3 0.7 s s td tr ts tf VCC = 125V, IC = 8A, IB1 = IB2 = 1.6A, tp = 25s, Duty Cycle 1% - - - - 0.06 0.45 1.3 0.2 0.1 1.0 3.0 0.7 s s s s fT Cob IC = 500mA, VCE = 10V, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz 4 - - 180 - - MHz pF 8 6 - - - - - - - - - - - - - - - - 40 30 1.0 1.5 3.0 2.0 1.2 1.6 1.5 V V V V V V V IEBO VEB = 9V, IC = 0 400 - - - - - - - - 1 5 1 V mA mA mA Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab

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