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| NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications. Features: D Fast Turn-Off Times Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage (VBE = -1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, L = 25mH ICEX ICER Emitter Cutoff Current Emitter-Base Breakdown Voltage IEBO V(BR)EBO VCEX = 850V, VBE(off) = 1.5V VCEV = 850V, VBE(off) = 1.5V, TC = +125C VCE = 850V, RBE = 10 VCE = 850V, RBE = 10, TC = +100C VBE = 5V, IC = 0 IE = 50mA, -IC = 0 400 - - - - - 7 - - - - - - - - 0.2 2.0 0.5 3.0 0.1 - V mA mA mA mA mA V Symbol Test Conditions Min Typ Max Unit Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%, Vcl = 300V, VBE(off) = 5V, LC = 180H. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VCE = 5V, IC = 10A IC = 10A, IB = 2A IC = 10A, IB = 2A, TC = +100C IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A, TC = +100C Base-Emitter Saturation Voltage Dynamic Characteristics Output Capacitance Delay Time Rise Time Storage Time Fall Time Storage Time Fall Time Storage Time Crossover Time Fall Time Cob td tr ts tf tsv tfi tsv tc tfi IC = 10A, IB1 = 2A, TC = +100C IC = 10A, IB1 = 2A, TC = +25C VCB = 10V, IE = 0, ftest = 1kHz VCC = 300V, IC = 10A, IB = 2A, tp = 30s, Duty Cycle = 2%, VBE(off) = 5V - - - - - - - - - - - 0.1 0.4 1.3 0.2 1.3 0.06 1.5 0.3 350 0.2 0.7 2.0 0.4 - - 2.5 0.6 pF s s s s s s s s s Switching Characteristics (Resistive Load) VBE(sat) IC = 10A, IB = 2A IC = 10A, IB = 2A, TC = +100C 8 - - - - - - - - - - - - - - 1.5 2.0 1.5 2.0 1.6 1.6 V V V V V V Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Inductive Load, Clamped) 0.17 0.35 Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%, Vcl = 300V, VBE(off) = 5V, LC = 180H. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane COLLECTOR .312 (7.93) Min BASE Emitter .215 (5.45) EMITTER .430 (10.92) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
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