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| NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector-Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector-Emitter Cutoff Current Symbol ICEO ICES Emitter-Base Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter ON Voltage DC Current Gain IEBO VCEO(sus) VCE(sat) VBE(on) hFE Test Conditions VCE = 300V, IB = 0 VCE = 500V, VEB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0, Note 1 IC = 3A, IB = 0.6A, Note 1 IC = 3A, VCE = 10V, Note 1 IC = 0.3A, VCE = 10V IC = 3A, VCE = 10V Min - - - 400 - - 30 10 Typ - - - - - - 150 - Max 1 1 1 - 1.5 1.5 - - Unit mA mA mA V V V Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Small-Signal Current Gain Symbol hfe Es/b ton toff Test Conditions IC = 0.2A, VCE = 10V, f = 1kHz IC = 0.2A, VCE = 10V, f = 1MHz Second Breakdown Unclamped Energy Turn-On Time Turn-Off Time VBE = 20V, RBE = 100, l = 30mH IC = 1A, IB1 = 100mA, VCC = 200V IC = 1A, IB1 = -IB2 = 100mA, VCC = 200V Min 30 2.5 100 - - Typ - - - 0.2 0.2 Max - - - - - mJ s s Unit .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C E .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
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