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| NTE65 Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV Description: The NTE65 is silicon NPN transistor designed primarily for use in high-gain, low-noise, small-signal amplifier and also used in applications requiring fast switching times. Features: D High Current-Gain Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +60C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW Derate Above 60C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thremal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain hFE VCE = 10V, IC = 14mA 25 - 250 V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICBO VCB = 10V, IE = 0 15 20 3 - - - - - - - - 50 V V V nA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Dynamic Characteristics Current-Gain Bandwidth Product Collector-Base Capacitance Functional Tests Noise Figure NF VCE = 10V, IC = 2mA, f = 0.5GHz VCE = 10V, IC = 2mA, f = 1.0GHz Power Gain at Optimum Noise Figure GNF Gmax VCE = 10V, IC = 2mA, f = 0.5GHz VCE = 10V, IC = 2mA, f = 1.0GHz Maximum Available Power Gain (Note 1) VCE = 10V, IC = 2mA, f = 0.5GHz VCE = 10V, IC = 2mA, f = 1.0GHz - - - - - - 2.4 3.0 15 10 18 12 - - - - - - dB dB dB dB dB dB fT Ccb VCE = 10V, IC = 14mA, f = 0.5GHz VCB = 10V, IE = 0, f = 1MHz - - 5.0 0.5 - 1.0 GHz pF Symbol Test Conditions Min Typ Max Unit |S21|2 Gmax = Note 1. (I - |S11|2) (I - |S22|2) .205 (5.2) Dia Max .039 (1.0) .005 (0.15) .098 (2.5) .197 (5.0) Emitter .147 (3.75) Max Collector Base .354 (9.0) .197 5.0) |
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