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Datasheet File OCR Text: |
NTE907 Integrated Circuit Diode Array Description: The NTE907 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a common terminal with the substrate. The NTE907 comes in a 12-Lead TO5 type package. Features: D Excellent Reverse Recovery Time: 1ns typ. D Matched Monolithic Construction: VF matched within 5mV D Low Diode Capacitance: CD = 0.65pF typical at VR = -2V Applications: D Balanced Modulators or Demodulators D Ring Modulators D High Speed Diode Gates D Analog Switches Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation, PD Any one diode unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Total for device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW For TA > 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 5.7mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Peak Inverse Voltage, PIV D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V Peak Diode-to-Substrate Voltage, VDI for D1-D5 (Pin1, 4, 5, 8, or 12 to Pin10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V, -1V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Peak Recurrent Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Forward Surge Current, IF (Surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Lead Temperature, TL (During soldering 1/16 1/32" (1.59 0.79mm) from case for 10sec Max) . . . . . . . . . +265C Electrical Characteristics: (TA = +25C, Note 1 unless otherwise specified) Parameter DC Forward Voltage Drop Symbol VF Test Conditions IF = 50A IF =1 mA IF = 3mA IF = 10mA DC Reverse Breakdown Voltage DC Reverse Breakdown Voltage Between any Diode Unit and Substrate DC Reverse (Leakage) Current V(BR)R V(BR)R IR = -10A IR = -10A Min - - - - 5 20 Typ 0.65 0.73 0.76 0.81 7 - Max 0.69 0.78 0.80 0.90 - - V V Unit V IR VR = -4V VR = -10V - - 0.016 0.022 100 100 nA nA DC Reverse (Leakage) Current IR Between any Diode Unit and Substrate Magnitude of Diode Offset Voltage |VF1-VF2| (Difference in DC Forward Voltage Drops of any Two Diode Units) Temperature Coefficient of |VF1-VF2| |VF1-VF2| T Temperature Coefficient of Forward VF T Drop DC Forward Voltage Drop for VF Anode-to-Substrate Diode (DS) Reverse Recovery Time trr Diode Resistance Diode Capacitance Diode-to-Substrate Capacitance RD CD CD1 IF = 1mA - 0.5 5 mV V/C mV/C V ns pF pF IF = 1mA IF = 1mA IF = 1mA IF = 10mA, IR = 10mA f = 1kHz, IF = 1mA VR = -2V, IF = 0 VD1 = +4V, IF = 0 - - - - 25 - - 1 -1.9 0.65 1 30 0.65 3.2 - - - - 45 - - Note 1. Characteristics apply for each diode unit, unless otherwise specified. Pin Connection Diagram (Top View) Anode D1 8 Anode D6 9 Cathode D6/ Substrate & Case 10 Cathode D5 11 Anode D5 12 1 2 67 Cathode D1 6 Cathode D2 5 Anode D2 4 Anode D3 Anode D4 1 3 Cathode D3 Cathode D4 .370 (9.4) Dia Max .335 (8.5) Dia Max .180 (4.57) Max .500 (12.7) Min .018 (0.48) Dia Typ .245 (6.23) Dia 4 3 2 1 5 6 7 12 11 10 9 8 |
Price & Availability of NTE907
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