 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall-time is critical. They are particularly suited for line operated switch-mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.86W/C Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 250mA, IB = 0, Vclamp = 400V VCEX(sus) Collector Cutoff Current ICEV ICER Emitter Cutoff Current ON Characteristics (Note 3) DC Current Gain hFE VCE(sat) VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A Collector-Emitter Saturation Voltage IC = 5A, IB = 250mA IC = 5A, IB = 250mA, TC = +100C IC = 10A, IB = 1A Base-Emitter Saturation Voltage VBE(sat) VF hfe Cob td tr ts tf tsv tc tsv tc IC = 5A Peak, Vclamp = 450V, IB1 = 250mA, VBE(off) = 5V, TC = +100C IC = 5A Peak, Vclamp = 450V, IB1 = 250mA, VBE(off) = 5V, TC = +25C IC = 5.2A, IB = 250mA IC = 5A, IB = 250mA, TC = +100C Diode Forward Voltage Dynamic Characteristics Small-Signal Current Gain Output Capacitance VCE = 10V, IC = 1A, ftest = 1MHz VCB = 50V, IE = 0, ftest = 100kHz VCC = 250V, IC = 5A, IB1 = 250mA, VBE(off) = 5V, tp = 50s, Duty Cycle 2% 10 60 - - - 275 pF s s s s s s s s IF = 5A, Note 3 40 30 - - - - - - - - - - - - - 3 500 300 1.9 2.0 2.9 2.5 2.5 5 V V V V V V IEBO IC = 1A, Vclamp = 450V, TC = +100C IC = 5A, Vclamp = 450V, TC = +100C VCEV = 500V, VBE(off) = 1.5V VCEV = 500V, VBE(off) = 1.5V, TC = +100C VCEV= 500V, RBE= 50, TC = +100C VEB = 8V, IC = 0 400 450 325 - - - - - - - - - - - - - - 0.25 5.0 5.0 175 V V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time - - - - 0.05 0.25 1.2 0.6 0.2 0.6 3.0 1.5 Switching Characteristics (Inductive Load, Clamped) Storage Time Crossover Time Storage Time Crossover Time - - - - 2.1 1.3 0.92 0.5 5.0 3.3 - - Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%. Note 3. The internal Collector-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is comparable to that of typical fast recovery rectifiers. C B E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE97
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |